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Research of two-dimensional hole gas in p-GaN/Al0.35Ga0.65N/GaN strained quantum-well

You Da Xu Jin-Tong Tang Ying-Wen He Zheng Xu Yun-Hua Gong Hai-Mei

Research of two-dimensional hole gas in p-GaN/Al0.35Ga0.65N/GaN strained quantum-well

You Da, Xu Jin-Tong, Tang Ying-Wen, He Zheng, Xu Yun-Hua, Gong Hai-Mei
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  • Received Date:  02 March 2006
  • Accepted Date:  28 August 2006
  • Published Online:  20 December 2006

Research of two-dimensional hole gas in p-GaN/Al0.35Ga0.65N/GaN strained quantum-well

  • 1. 中国科学院上海技术物理研究所传感技术国家重点实验室,上海 200083

Abstract: In this paper, the two-dimensional hole gas (2DHG) induced in the heterojunction were investigated in detail. The density of the 2DHG was calculated at first, then, based on the semiconductor-insulator-semiconductor and superlattice critical thickness model and using the self consistent Poisson-Schrdinger calculations, the influence of the AlGaN barrier and the top GaN layer thickness on the distribution of the 2DHG were calculated when the barrier layer is fully strained and half strained. The Schottky device with this structure was fabricated and C-V measurement was made to verify the existence of the 2DHG and the validity of calculation results. Finally, the 2DHG effects on p-GaN/AlGaN/GaN Schottky photodetector were investigated. Due to the polarization and Stark effect, the spectral responses with the 10nm blue shift are observed. Under zero bias, the peak responsivity of the device is about 0.022A/W, and increases to 0.19A/W under 1V reverse bias, which approaches the theoretical limit.

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