Resistive switching behavior and mechanism of multilayer MoS<sub>2</sub> memtransistor under control of back gate bias and light illumination

Deng Wen; Wang Li-Sheng; Liu Jia-Ning; Yu Xue-Ling; Chen Feng-Xiang

doi:10.7498/aps.70.20210750

Abstract

Memtransistor is a new multi-terminal device which combines the properties of memristor and field effect transistor and simultaneously realizes information storage and processing. In this paper, the multilayer MoS₂ is prepared by micromechanical exploration method, then the back gate MoS₂ memtransistor with field effect transistor structure is fabricated, and the resistive switching characteristics and mechanism of the device under electric field, light field and their synergistic regulation are systematically studied. The experimental results show that the multilayer MoS₂ memtransistor has excellent bipolar resistance behavior and good cycle durability. Under the control of gate voltage, the switching ratio of the device can be tuned in a range of 10⁰－10⁵, up to 1.56 × 10⁵, which indicates that the device has a strong gating effect. Under the control of light illumination, the resistance characteristics of the device are strongly dependent on the incident wavelength. When photoelectric synergistic regulation is performed, the device displays excellent four-terminal control capability, and the switching ratio is enhanced up to 4.8 × 10⁴. The mechanism of resistive switching characteristics can be attributed to the changes of charge capture state and Schottky barrier height at the interface between MoS₂ and metal electrodes, and the continuous photoconductance effect caused by photogenerated carriers in MoS₂ channel.

Keywords:

Authors and contacts

Department of Physics Science and Technology, School of Science, Wuhan University of Technology, Wuhan 430070, China

Corresponding author: Wang Li-Sheng, wang_lesson@whut.edu.cn ; Chen Feng-Xiang, phonixchen79@whut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51702245) and the Fundamental Research Funds for the Central Universities, China (Grant No. WUT2020IB010).

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References

[1]	Lu H, Seabaugh A 2014 IEEE J. Electron Devices Soc. 2 44 Google Scholar
[2]	Sangwan V K, Lee H S, Bergeron H, Balla I, Beck M E, Chen K S, Hersam M C 2018 Nature 554 500 Google Scholar
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图 1 多层MoS₂记忆晶体管的结构示意图

Figure 1. Schematic diagram of multilayer MoS₂ memtransistor

DownLoad: Full-Size Img PowerPoint

图 2 多层MoS₂记忆晶体管的制备过程示意图

Figure 2. Diagram of the preparation processes of multilayer MoS₂ memtransistor.

DownLoad: Full-Size Img PowerPoint

图 3 (a) 多层MoS₂的AFM图像; (b) 多层MoS₂的拉曼光谱

Figure 3. (a) AFM image of multilayer MoS₂ ; (b) Raman spectrum of multilayer MoS₂.

DownLoad: Full-Size Img PowerPoint

图 4 在0 V栅压时多层MoS₂记忆晶体管的阻变特性　(a) 5 V至–5 V源漏电压扫描下器件I_d-V_ds曲线(插图: 器件在源极和漏极交换测试前后的I_ds-V_ds曲线); (b) 连续125个循环中器件在V_ds= 0.6 V时高低阻态的阻值变化; (c)器件在室温下高低阻态保持特性图

Figure 4. Resistance characteristics of multilayer MoS₂ memtransistor at V_g = 0 V: (a) I_d-V_ds characteristic of the device at cyclic sweeping of the V_ds from 5 to –5 V (Inset: the I_ds-V_ds curves of the device before and after the source-drain electrode is exchanged); (b) the resistances of the device in high and low resistance states at V_ds = 0.6 V during 125 cycles; (c) switching retention characteristics of the device at room temperature.

DownLoad: Full-Size Img PowerPoint

图 5 不同栅压下多层MoS₂记忆晶体管的阻变特性　(a) 栅压V_g = –1, –3, –5, –7 V时的I_d-V_ds曲线; (b) 栅压V_g= 0, 5, 10, 15, 20 V时的I_d-V_ds曲线

Figure 5. Resistance characteristics of multilayer MoS₂ memtransistor under different gate voltages: (a) I_d-V_ds characteristics of the device at V_g = –1, –3, –5, –7 V; (b) I_d-V_ds characteristics of the device at V_g= 0, 5, 10, 15, 20 V.

DownLoad: Full-Size Img PowerPoint

图 6 光场调控多层MoS₂记忆晶体管的阻变特性　(a) 不同波长光照射时器件的I_d-V_ds曲线; (b) 不同波长光照射时器件的高低阻态阻值及开关比的变化

Figure 6. Resistance characteristics of multilayer MoS₂ memtransistor under the control of the light field: (a) I_d-V_ds characteristics of the device under different wavelength illumination; (b) the resistances of the device in high and low resistance states and the corresponding ON/OFF radio under different wavelength illumination.

DownLoad: Full-Size Img PowerPoint

图 7 波长为200 , 400和800 nm光照射时, 器件高低阻态的阻值随栅压的变化(a)和电阻开关比随栅压的变化(b)

Figure 7. For incident light with 200, 400 and 800 nm wavelengths, (a) the resistances of the device versus V_g in high and low resistance states and (b) the ON/OFF radio versus V_g.

DownLoad: Full-Size Img PowerPoint

图 8 不同器件之间的性能对比　(a) 器件在不同栅压下开关比的变化; (b) 器件在不同波长下开关比的变化; (c) 器件在200, 400 和800 nm光照射时, 开关比随栅压的变化

Figure 8. Performance comparison between different devices: (a) Switching ratio of the devices under different gate voltages; (b) switching ratio of devices at different wavelengths; (c) switching ratio varies with gate voltages at illumination wavelengths of 200, 400 and 800 nm.

DownLoad: Full-Size Img PowerPoint

表 1 不同正栅压下器件的性能参数比较

Table 1. Performance parameters of the device at different forward gate voltages.

栅压 V_g/V	0	5	7	10	15	20
HRS阻值/Ω	1.82×10¹³	2.85×10¹³	7.40×10¹²	1.87×10¹²	4.46×10¹¹	2.72×10¹¹
LRS阻值/Ω	1.08×10¹⁰	2.78×10⁸	4.74×10⁷	1.25×10⁷	4.42×10⁶	2.95×10⁶
开关比	1.69×10³	1.03×10⁵	1.56×10⁵	1.50×10⁵	1.01×10⁵	0.92×10⁵

DownLoad: CSV

[1]	Lu H, Seabaugh A 2014 IEEE J. Electron Devices Soc. 2 44 Google Scholar
[2]	Sangwan V K, Lee H S, Bergeron H, Balla I, Beck M E, Chen K S, Hersam M C 2018 Nature 554 500 Google Scholar
[3]	Yin S Q, Song C, Sun Y M, Qiao L L, Wang B L, Sun Y F, Liu K, Pan F, Zhang X Z 2019 ACS Appl. Mater. Interfaces 11 43344 Google Scholar
[4]	Wang L, Liao W G, Wong S L, Yu Z G, Li S F, Lim Y F, Feng X W, Tan W C, Huang X, Chen L, Liu L, Chen J S, Gong X, Zhu C X, Liu X K, Zhang Y W, Chi D Z, Ang K W 2019 Adv. Funct. Mater. 29 1901106 Google Scholar
[5]	Lee H S, Sangwan V K, Rojas W A G, Bergeron H, Jeong H Y, Yuan J T, Su K, Hersam M C 2020 Adv. Funct. Mater. 30 2003683 Google Scholar
[6]	Yang Y, Du H Y, Xue Q, Wei X H, Yang Z B, Xu C G, Lin D M, Jie W J, Hao J H 2019 Nano Energy 57 566 Google Scholar
[7]	Chen G L, Zhang L, Li L Y, Cheng F, Fu X, Li J H, Pan R K, Cao W Q, Chan A S, Panin G N, Wan J X, Zhang H, Liu C 2020 J. Alloys Compd. 823 153697 Google Scholar
[8]	Park H, Mastro M A, Tadjer M J, Kim J 2019 Adv. Electron. Mater. 5 1900333 Google Scholar
[9]	Zhao Y, Yu D Z, Liu Z, Li S J, He Z Y 2020 IEEE Access 8 106726 Google Scholar
[10]	Dragoman M, Dinescu A, Nastase F, Dragoman D 2020 Nanomaterials 10 1404 Google Scholar
[11]	Yu Y M, Yang F, Mao S S, Zhu S H, Jia Y F, Yuan L, Salmen M, Sun B 2018 Chem. Phys. Lett. 706 477 Google Scholar
[12]	余志强, 刘敏丽, 郎建勋, 钱楷, 张昌华 2018 物理学报 67 157302 Google Scholar Yu Z Q, Liu M L, Lang J X, Qian K, Zhang C H 2018 Acta Phys. Sin. 67 157302 Google Scholar
[13]	孟凡一, 段书凯, 王丽丹, 胡小方, 董哲康 2015 物理学报 64 148501 Google Scholar Meng F Y, Duan S K, Wang L D, Hu X F, Dong Z K 2015 Acta Phys. Sin. 64 148501 Google Scholar
[14]	Dongale T D, Mohite S V, Bagade A A, Kamat R K, Rajpure K Y 2017 Microelectron. Eng. 183-184 12
[15]	Rajkumari R, Singh N K 2020 ACS Appl. Nano Mater. 3 12087 Google Scholar
[16]	Rodder M A, Vasishta S, Dodabalapur A 2020 ACS Appl. Mater. Interfaces 12 33926 Google Scholar
[17]	Xu L P, Duan Z H, Zhang P, Wang X, Zhang J Z, Shang L Y, Jiang K, Li Y W, Zhu L Q, Gong Y J, Hu Z G, Chu J H 2020 ACS Appl. Mater. Interfaces 12 44902 Google Scholar
[18]	Zhang S Q, Liu Y, Zhou J R, Ma M, Gao A Y, Zheng B J, Li L F, Su X, Han G Q, Zhang J C, Shi Y, Wang X M, Hao Y 2020 Nanoscale Res. Lett. 15 157 Google Scholar
[19]	Wang Y H, Li D Y, Lai X B, Liu B Y, Chen Y B, Wang F P, Wang R M, Zhang L W 2020 Curr. Appl. Phys. 20 298 Google Scholar
[20]	Ahmed Z, Shi Q, Ma Z C, Zhang L N, Guo H, Chan M S 2020 IEEE Electron Device Lett. 41 171 Google Scholar
[21]	Huang X N, Yao Y, Peng S G, Zhang D Y, Shi J Y, Jin Z 2020 Materials 13 2896 Google Scholar
[22]	Nalwa H S 2020 RCS Adv. 10 30529 Google Scholar
[23]	孙真昊, 管鸿明, 付雷, 沈波, 唐宁 2021 物理学报 70 027302 Sun Z H, Guan H M, Fu L, Shen B, Tang N 2021 Acta Phys. Sin. 70 027302
[24]	Bao W Z, Cai X H, Kim D, Sridhara K, Fuhrer M S 2013 Appl. Phys. Lett. 102 042104 Google Scholar
[25]	Zhang J, Yu H, Chen W, Tian X Z, Liu D H, Cheng M, Xie G B, Yang W, Yang R, Bai X D, Shi D X, Zhang G Y 2014 ACS Nano 8 6024 Google Scholar
[26]	Yu H, Liao M Z, Zhao W J, Liu G D, Zhou X J, Wei Z, Xu X Z, Liu K H, Hu Z H, Deng K, Zhou S Y, Shi J A, Gu L, Shen C, Zhang T T, Du L J, Xie L, Zhu J Q, Chen W, Yang R, Shi D X, Zhang G Y 2017 ACS Nano 11 12001 Google Scholar
[27]	Li D, Wu B, Zhu X J, Wang J T, Ryu B, Lu W D, Lu W, Liang X G 2018 ACS Nano 12 9240 Google Scholar
[28]	Kim K S, Ji Y J, Kim K H, Choi S, Kang D H, Heo K, Cho S, Yim S, Lee S, Park J H, Jung Y S, Yeom G Y 2019 Nat. Commun. 10 4701 Google Scholar

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Resistive switching behavior and mechanism of multilayer MoS₂ memtransistor under control of back gate bias and light illumination

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Corresponding author: Wang Li-Sheng, wang_lesson@whut.edu.cn ; Chen Feng-Xiang, phonixchen79@whut.edu.cn

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Resistive switching behavior and mechanism of multilayer MoS2 memtransistor under control of back gate bias and light illumination

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Corresponding author: Wang Li-Sheng, wang_lesson@whut.edu.cn ; Chen Feng-Xiang, phonixchen79@whut.edu.cn

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Resistive switching behavior and mechanism of multilayer MoS₂ memtransistor under control of back gate bias and light illumination