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In view of the great demand for large-area silicon detectors in domestic nuclear physics experiments, a type of 300-μm-thick high-performance square silicon detector with a large active area of 50 mm×50 mm by using overprinting technology is developed in the Institute of Modern Physics of the Chinese Academy of Sciences. Based on this technology, SiO2 contamination caused by the photolithography and corrosion processes is effectively reduced. The detector has an excellent performance with a yield of up to 80%. Under –45 V (depletion voltage) bias, the leakage current of the detector is less than 40 nA. The detector is tested with a three-component α radioactive source. The energy resolution (σ) is about 45 keV for 5-MeV α particles. Used as an energy deposition(ΔE) detector, the detector performance is also tested for measuring reaction products of 250 MeV/u 11C radioactive beams impinging on a carbon target. The results show that the charge number resolution of a single silicon detector is 0.17 for the carbon isotope, which is similar to that measured with the same type of detectors available from the market. With the average deposition energy of three silicon detectors used, the charge number resolution for carbon isotope reaches a better value of 0.11. With this resolution, C and B isotopes are clearly distinguished, meeting the requirements for particle identification in intermediate- and high-energy radioactive beam experiments.
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Zeng S, Liu W P, Ye Y L, Bei Jing ISOL team 2019 Atom. Ener. Sci. Tech. 53 2321
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[22] 杨昉东, 郝晓勇, 赵江滨, 张向阳, 何高魁 2019 中国专利 CN201811621988.8
Yang F D, Hao X Y, Zhao J B, Zhang X Y, He G K 2019 Chinese Patent CN201811621988.8 (in Chinese)
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图 1 (a)探测器p+-n-n+结构示意图; (b)封装好的探测器实物图
Figure 1. (a) Schematic diagram of p+-n-n+ structure of detector; (b) picture of silicon detector assembled in a readout board.
图 2 (a)显微镜下SiO2沾污照片; (b)补刻版示意图
Figure 2. (a) Photos of SiO2 contamination under microscope; (b) schematic diagram of supplementary photomask.
图 3 探测器的C-V特性曲线(a)和I-V特性曲线(b)
Figure 3. (a) C-V characteristic curves and (b) I-V characteristic curves of detector.
图 4 α源测试原理框图
Figure 4. Test principle structure diagram with α source.
图 5 在束测试实验探测器布局图
Figure 5. Layout of the detector setup in the beam test experiment.
图 6 Si1—Si3探测器的三组分α源测试能谱
Figure 6. Energy spectra for Si1–Si3 detectors measuring three component α source.
图 7 (a)—(c)分别为250 MeV/u的 11C打靶后在Si1—Si3探测器上的沉积能量分布; (d)为Si1—Si3沉积能量加和求平均后的分布(所有能谱已标定)
Figure 7. (a)–(c) Spectra for the energy deposition on Si1–Si3 detectors for 250 MeV/u 11C reaction products after the target; (d) spectrum for the average energy deposition on Si1–Si3 detectors for 250 MeV/u 11C reaction products after the target (the above spectra are already calibrated).
图 8 有靶(蓝色)和空靶(红色)情况下250 MeV/u的11C 在Si1—Si3探测器上沉积能量加和平均后的分布
Figure 8. Spectrum for the average energy deposition on Si1–Si3 detectors for 250 MeV/u 11C with target (blue) and without target (red).
图 9 250 MeV/u的11C打靶后在Si1—Si3探测器沉积能量的二维关联图
Figure 9. Two-dimensional correlation spectrum for the energy deposition on Si1–Si3 detectors for 250 MeV/u 11C with target.
图 10 (a)—(c)基于250 MeV/u的11C打靶后在Si1—Si3探测器沉积的能量得到的粒子电荷数Z的分布; (d) Si1—Si3探测器沉积能量加和平均后得到的粒子电荷数Z的分布图(已刻度)
Figure 10. (a)–(c) Distribution of atomic number Z deduced from the energy deposition on Si1–Si3 detectors for 250 MeV/u 11C reaction products after target; (d) distribution of atomic number Z deduced from the average value of the energy deposition on Si1–Si3 detectors (calibrated)
图 11 有靶(蓝色)和空靶(红色)情况下250 MeV/u的11C 在Si1—Si3探测器上的Z鉴别图
Figure 11. Distribution of atomic number Z for 250 MeV/u 11C on Si1–Si3 detectors with target (blue) and empty target (red).
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[1] Tanihata I 2016 Eur. Phys. J. Plus 131 90
Google Scholar
[2] Nakamura T, Sakurai H, Watanabe H 2017 Prog. Part. Nucl. Phys. 97 53
Google Scholar
[3] 崔保群, 唐兵, 马鹰俊, 马瑞刚, 陈立华, 黄青华, 马燮 2019 原子能科学技术 53 1572
Google Scholar
Cui B Q, Tang B, Ma Y J, Ma R G, Chen L H, Huang Q H, Ma X 2019 Atom. Ener. Sci. Tech. 53 1572
Google Scholar
[4] 曾晟, 柳卫平, 叶沿林, 北京ISOL团队 2019 原子能科学技术 53 2321
Google Scholar
Zeng S, Liu W P, Ye Y L, Bei Jing ISOL team 2019 Atom. Ener. Sci. Tech. 53 2321
Google Scholar
[5] Sun Z, Zhan W L, Guo Z Y, Xiao G, Li J X 2003 Nucl. Instrum. Meth. A 503 496
Google Scholar
[6] Zhan W L, Xu H S, Xiao G Q, Xia J W, Yuan Y J, HIRFL-CSR Group 2010 Nucl. Phys. A 834 694c
Google Scholar
[7] 方芳, 唐述文, 王世陶, 章学恒, 孙志宇, 余玉洪, 阎铎, 金树亚, 赵亦轩, 马少波, 张永杰 2022 原子核物理评论 39 65
Google Scholar
Fang F, Tang S W, Wang S T, Zhang X H, Sun Z Y, Yu Y H, Yan D, Jin S Y, Zhao Y X, Ma S B, Zhang Y J 2022 Nucl. Phys. Rev. 39 65
Google Scholar
[8] Ahn D S, Amano J, Baba H, Fukuda N, Geissel H, Inabe N, Ishikawa S, Iwasa N, Komatsubara T, Kubo T, Kusaka K, Morrissey D J, Nakamura T, Ohtake M, Otsu H, Sakakibara T, Sato H, Sherrill B M, Shimizu Y, Sumikama T, Suzuki H, Takeda H, Tarasov O B, Ueno H, Yanagisawa Y, Yoshida K 2022 Phys. Rev. Lett. 129 212502
Google Scholar
[9] Li R, Wang X, Li H, Chen C, Zu K, Hu R, Zhao C, Li Z 2019 JINST 14 C05020
Google Scholar
[10] 邹鸿, 陈鸿飞, 邹积清, 宁宝俊, 施伟红, 田大宇, 张录 2007 核电子学与探测技术 27 170
Google Scholar
Zou H, Chen H F, Zou J Q, Ning B J, Shi W H, Tian D Y, Zhang L 2007 Nucl. Elec. and Det. Tech. 27 170
Google Scholar
[11] Bao P F, Lin C J, Yang F, Guo Z Q, Guo T S, Yang L, Sun L J, Jia H M, Xu X X, Ma N R, Zhang H Q, Liu Z H 2014 Chin. Phys. C 38 126001
Google Scholar
[12] 孟祥承 2003 核电子学与探测技术 23 4
Google Scholar
Meng X C 2003 Nucl. Elec. and Det. Tech. 23 4
Google Scholar
[13] 谢一冈, 陈昌, 王曼, 吕军光, 孟祥承, 王锋, 顾树棣, 过雅南 2003粒子探测器与数据获取 (北京: 科学出版社) 第230页
Xie Y G, Chen C, Wang M, Lv J G, Meng X C, Wang F, Gu S D, Guo Y N 2003 Particle Detector and Data Acquisition (Beijing: Science Press) p230 (in Chinese)
[14] 丁洪林 2010 核辐射探测器 (哈尔滨: 哈尔滨工程大学出版社) 第168页
Ding H L 2010 Nuclear Radiation Detector (Harbin: Harbin Engineering University Press) p168 (in Chinese)
[15] Casse G, Affolder A, Allport P P, Brown H, Mcleod I, Wormald M 2011 Nucl. Instrum. Meth. A 636 S56
Google Scholar
[16] 卢希庭, 江栋兴, 叶沿林 2000 原子核物理 (北京: 原子能出版社) 第82页
Lu X T, Jiang D X, Ye Y L 2000 Nuclear Physics (Beijing: Atomic Energy Press) p82 (in Chinese)
[17] Zhang X H, Tang S W, Ma P, Lu C G, Yang H R, Wang S T, Yu Y H, Yue K, Fang F, Yan D, Zhou Y, Wang Z M, Sun Y, Sun Z Y, Duan L M, Sun B H 2015 Nucl. Instrum. Meth. A 795 389
Google Scholar
[18] 李朋杰, 李智焕, 陈志强, 吴鸿毅, 田正阳, 蒋伟, 李晶, 冯骏, 臧宏亮, 刘强, 牛晨阳, 杨彪, 陶龙春, 张允, 孙晓慧, 王翔, 刘洋, 李奇特, 楼建玲, 李湘庆, 华辉, 江栋兴, 叶沿林 2017 原子核物理评论 34 177
Google Scholar
Li P J, Li Z H, Chen Z Q, Wu H Y, Tian Z Y, Jiang W, Li J, Feng J, Zang H L, Liu Q, Niu C Y, Yang B, Tao L C, Zhang Y, Sun X H, Wang X, Liu Y, Li Q T, Lou J L, Li X Q, Hua H, Jiang D X, Ye Y L 2017 Nucl. Phys. Rev. 34 177
Google Scholar
[19] Yamaguchi T, Fukuda M, Fukuda S, Fan G W, Hachiuma I, Kanazawa M, Kitagawa A, Kuboki T, Lantz M, Mihara M, Nagashima M, Namihira K, Nishimura D, Okuma Y, Ohtsubo T, Sato S, Suzuki T, Takechi M, Xu W 2010 Phys. Rev. C 82 014609
Google Scholar
[20] Zhao J W, Sun B H, He L C, Li G S, Lin W J, Liu C Y, Liu Z, Lu C G, Shen D P, Sun Y Z, Sun Z Y, Tanihata I, Terashima S, Tran D T, Wang F, Wang J, Wang S T, Wei X L, Xu X D, Zhu L H, Zhang J C, Zhang X H, Zhang Y, Zhou Z T 2019 Nucl. Instrum. Meth. A 930 95
Google Scholar
[21] 于民, 董显山, 田大宇, 金玉丰 2012 中国专利 CN201110452444.5
Yu M, Dong X S, Tian D Y, Jin Y F 2012 Chinese Patent CN201110452444.5 (in Chinese)
[22] 杨昉东, 郝晓勇, 赵江滨, 张向阳, 何高魁 2019 中国专利 CN201811621988.8
Yang F D, Hao X Y, Zhao J B, Zhang X Y, He G K 2019 Chinese Patent CN201811621988.8 (in Chinese)
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