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采用改进的溶胶-凝胶方法在LaNiO3/Si(100)衬底上制备了MgO/(Ba0.8Sr0.2)TiO3多层薄膜.实验结果表明，MgO层的引入改变了(Ba0.8Sr0.2)TiO3的介电特性和漏电流行为，使薄膜的漏电 流降低了3个数量级，但介电常数也有相应降低.漏电流的显著降低是由MgO子层的高阻特性 以及微量Mg向(Ba0.8
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关键词:
- MgO/(Ba0.8Sr0.2)TiO3多层薄膜 /
- 漏电流 /
- 介电常 数
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Citation:
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物理学报. 2006, 55(4): 2069-2072.
doi: 10.7498/aps.55.2069.
溶胶-凝胶法制备MgO/(Ba0.8Sr0.2)TiO3多层薄膜及其介电和漏电特性研究
- 收稿日期: 2005-07-29
- 修回日期: 2005-11-03
- 刊出日期: 2006-02-05
摘要: 采用改进的溶胶-凝胶方法在LaNiO3/Si(100)衬底上制备了MgO/(Ba0.8Sr0.2)TiO3多层薄膜.实验结果表明，MgO层的引入改变了(Ba0.8Sr0.2)TiO3的介电特性和漏电流行为，使薄膜的漏电 流降低了3个数量级，但介电常数也有相应降低.漏电流的显著降低是由MgO子层的高阻特性 以及微量Mg向(Ba0.8
-
关键词:
- MgO/(Ba0.8Sr0.2)TiO3多层薄膜 /
- 漏电流 /
- 介电常 数
English Abstract
Dielectric properties and leakage current of MgO/(Ba0.8Sr0.2)TiO3 heterostructured films prepared by sol-gel technique
- Received Date:
29 July 2005
- Accepted Date:
03 November 2005
- Published Online:
05 February 2006
Abstract: Ferroelectric MgO/(Ba0.8Sr0.2)TiO3 heterostruct ured films have been grown on LaNiO3/Si(100) substrates by an improve d sol-gel technique. The dielectric constant and the leakage current of (Ba 0.8Sr0.2)TiO3 films have been modified by MgO insert ion. The dramatic reduction in the leakage current has been attributed to the mi nute solid solubility of MgO in the (Ba0.8Sr0.2)TiO3 lattice and the high resistance of the MgO layers.
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