Dielectric materials for high-performance triboelectric nanogenerators

Deng Hao-Cheng; Li Yi; Tian Shuang-Shuang; Zhang Xiao-Xing; Xiao Song

doi:10.7498/aps.73.20240150

Abstract

Triboelectric nanogenerator (TENG), as a micro-nano power source or self-powered sensor, has shown great prospects in various industries in recent years. The TENG output performance is closely related to the contact electrification characteristics of the triboelectric dielectric material. Herein, we first introduce the relevant fundamental theory and models of TENG and tribo-dielectrics. Then, we introduce the material selection, modification method (including surface modification and bulk modification) and structural design strategy of TENG dielectric material. Surface and bulk modification mainly involve surface roughness control, surface functional group regulation, and optimization of dielectric parameters. In terms of dielectric structural design, the principle of charge transport, trapping, and blocking layers as well as typical techniques to improve the dielectric properties of TENGs through multi-layer structures are highlighted. Finally, challenges and directions for future research are discussed, which is conducive to the fabricating of high-performance TENG dielectric materials.

Keywords:

Authors and contacts

1.
State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan 430072, China
2.
Hubei Engineering Research Center for Safety Monitoring of New Energy and Power Grid Equipment, School of Electrical and Electronic Engineering, Hubei University of Technology, Wuhan 430068, China

Corresponding author: Xiao Song, xiaosong@whu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 52207169).

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References

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Cited By

图 1 高性能摩擦纳米发电机的电介质材料改性与设计策略^[13-18]

Figure 1. Schematic diagram of dielectric modification and design strategies for high-performance triboelectric nanogenerator^[13-18].

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图 2 (a) CS-TENG的理论模型^[22], 电介质-电介质型(i)和导体-电介质型(ii); (b) 纳米电介质的界面模型^[25]

Figure 2. (a) Theoretical models for CS-TENG^[22], dielectric-to-dielectric mode (i), and conductor-to-dielectric mode (ii); (b) interface model of nanodielectrics^[25].

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图 3 表面粗糙度控制策略　(a) 表面改性机制^[41]; (b) 表面图案化^[13]; (c) 砂纸模版法^[44]; (d) 静电纺丝ZnO/PAN纤维膜^[46]; (e) 静电纺丝SMPU纤维膜^[47]

Figure 3. Surface roughness control strategy: (a) Surface modification mechanism^[41]; (b) surface patterning^[13]; (c) sandpaper template method^[44]; (d) electrospun ZnO/PAN fiber membrane^[46]; (e) electrospun SMPU fiber membrane^[47].

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图 4 表面官能团修饰策略　(a) 原子层面修饰^[14]; (b) 纤维素分子修饰^[51]; (c) 离子改性^[52]; (d) 等离子体处理^[54]; (e) 中性束处理^[55]

Figure 4. Surface functional group modification strategy: (a) Atomic level modification^[14]; (b) cellulose molecule modification^[51]; (c) ion modification^[52]; (d) plasma treatment^[54]; (e) neutral beam treatment^[55].

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图 5 提高相对介电常数的策略　(a) 极性相诱导示意图^[57]; (b) Bi₂WO₆:PVDF-TrFE纳米纤维膜^[15]; (c) 微电容器模型示意图^[67]; (d) Co-NPC/PVDF介质形成的微电容器^[69]; (e) MOF纳米片/丝素蛋白复合膜^[70]; (f) Cs₃Bi₂Br₉/PVDF-HFP纳米纤维膜^[72]

Figure 5. Strategies for improving relative permittivity: (a) Schematic diagram of polar phase induction^[57]; (b) Bi₂WO₆:PVDF-TrFE nanofiber membrane^[15]; (c) schematic diagram of the microcapacitor model^[67]; (d) microcapacitor formed by Co-NPC/PVDF dielectric^[69]; (e) MOF nanoflakes/silk fibroin composite membrane^[70]; (f) Cs₃Bi₂Br₉/PVDF-HFP nanofiber membrane^[72].

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图 6 抑制相对介电损耗、提高介电强度的策略　(a) Ag@C纳米颗粒掺入PDMS基质^[16]; (b) Al@Al₂O₃纳米颗粒掺入PVDF基质^[74]; (c) Ba(Zr_0.21Ti_0.79)O₃和BNNS共同掺入PVDF基质^[76]; (d) TiO₂纳米棒阵列掺入PVDF基质^[75]

Figure 6. Strategies to suppress relative dielectric loss and improve dielectric strength (a) Ag@C nanoparticles incorporated into PDMS matrix^[16]; (b) Al@Al₂O₃ nanoparticles incorporated into PVDF matrix^[74]; (c) Ba(Zr_0.21Ti_0.79)O₃ and BNNS incorporated into PVDF matrix^[76]; (d) TiO₂ nanorod array incorporated into PVDF matrix^[75].

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图 7 电荷传输层、储存层、阻挡层　(a) rGO-AgNPs充当电荷捕获层^[86]; (b) 摩擦电介质体积电导率对电荷捕获的影响^[87]; (c) PVA-PVA/CNT-PS充当电荷收集层、传输层和储存层^[17]; (d) TiO_x充当电荷阻挡层^[84]

Figure 7. Charge transport-storage-blocking layer: (a) rGO-AgNPs functioning as charge trapping layer^[86]; (b) effect of tribo-layer volume conductivity on charge trapping^[87]; (c) PVA-PVA/CNT-PS functioning as charge transport, transfer, and storage layer^[17]; (d) TiO_x functioning as charge blocking layer^[84].

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图 8 多层电介质结构设计　(a) Maxwell-Sillar-Wagner模型^[90]; (b) 铁电多层纳米复合电介质^[91]; (c) PVDF/BNNS-PVDF/BST-PVDF/BNNS三层结构电介质^[92]; (d) 梯度浓度的PVDF/BaTiO₃三层结构电介质^[94]

Figure 8. Multilayered dielectric structure design: (a) Maxwell-Sillar-Wagner model^[90]; (b) ferroelectric multilayer nanocomposite dielectric^[91]; (c) PVDF/BNNS-PVDF/BST-PVDF/BNNS three-layer structure dielectric^[92]; (d) PVDF/BaTiO₃ three-layer structure dielectric with gradient concentration^[94].

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