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Effects of annealing on the photoluminescence of He ion implanted sapphire after 230 MeV Pb ion irradiation

Song Yin Wang Zhi-Guang Wei Kong-Fang Zhang Chong-Hong Liu Chun-Bao Zang Hang Zhou Li-Hong

Effects of annealing on the photoluminescence of He ion implanted sapphire after 230 MeV Pb ion irradiation

Song Yin, Wang Zhi-Guang, Wei Kong-Fang, Zhang Chong-Hong, Liu Chun-Bao, Zang Hang, Zhou Li-Hong
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  • Received Date:  06 March 2006
  • Accepted Date:  06 June 2006
  • Published Online:  08 January 2007

Effects of annealing on the photoluminescence of He ion implanted sapphire after 230 MeV Pb ion irradiation

  • 1. 中国科学院近代物理研究所,兰州 730000

Abstract: Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by 208Pb27+ ions with energy of 1.1 MeV/u to the fluences ranging from 1×1012 to 5×1014 ion/cm2 and subsequently annealed at 600, 900 and 1100 K. The obtained PL spectra showed that emission peaks centred at 375, 390, 413, and 450 nm appeared in irradiated samples. The peak of 390 nm became very intense after 600 K annealing. The peak of 390 nm weakened and 510 nm peak started to build up at 900 K annealing, the peak of 390 nm vanished and 510 nm peak increased with the annealing temperature rising to 1100 K. Infrared spectra showed a broadening of the absorption band between 460 cm-1, and 510 cm-1 indicating strongly damaged regions being formed in the Al2O3 samples and position shift of the absorption band at 1000—1300 cm-1 towards higher wavenumber after Pb irradiation.

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