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Effect of dry etching on light emission of InAsP/InP SMQWs

Zhang Jun Jiang Shan Wu Hui-Zhen Liu Cheng Lao Yan-Feng Huang Zhan-Chao Xie Zheng-Sheng Cao Meng

Effect of dry etching on light emission of InAsP/InP SMQWs

Zhang Jun, Jiang Shan, Wu Hui-Zhen, Liu Cheng, Lao Yan-Feng, Huang Zhan-Chao, Xie Zheng-Sheng, Cao Meng
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Publishing process
  • Received Date:  04 May 2006
  • Accepted Date:  29 June 2006
  • Published Online:  05 January 2007

Effect of dry etching on light emission of InAsP/InP SMQWs

  • 1. (1)武汉邮电科学研究院,武汉 430074; (2)中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海 200050; (3)中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海 200050;中国科学院研究生院,北京 100039

Abstract: The cap layers of InAsP/InP SMQWs and InAsP/InGaAsP strained single quantum wells (SSQW) are etched to different depths using ICP. The PL intensity of the quantum wells is enhanced by different degrees after dry etching. The quantum well surface becomes rough and the microstructure inside the quantum well is changed during dry etching. The influence of surface roughness to the photoluminescence of quantum well is eliminated by selectively wet etching the InP cap layer of the SSQW. It is attained that after the cap layer is dry etched off about 20 nm the PL intensity of SSQW is enhanced about 1.8 and 1.2 times due to the change in microstructure and the roughening of surface, respectively.

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