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[1] Tracy C J, Fejes P, Theodore N D, Maniar P, Johnson E, Lamm A J, Paler A M, Malik I J, Ong P 2004 J. Electron. Mater. 33 886
[2] Celler G K, Cristoloveanu S 2003 J. Appl. Phys. 93 4955
[3] Lee M L, Fitzgerald E A 2003 Appl. Phys. Lett. 83 4202
[4] Mooney P M, Chu J O 2000 Annu. Rev. Mater. Sci. 30 335
[5] Ma L, Gao Y 2009 Acta Phys.Sin. 58 529 (in Chinese)[马 丽、高 勇 2009 物理学报 58 529]
[6] Chui C O, Ramanathan S, Triplett B B, McIntyre P C, Saraswat K C 2002 IEEE Electron Device Lett. 23 473
[7] Bai W P, Lu N, Liu J, Ramirez A, Kwong D L, Wristers D, Ritenour A, Lee L, Antoniadis D 2003 Symposium on VLSI Technology:Digest of Technical Papers Kyoto, Japan, June 10—12, 2003 p121
[8] Shang H, Okorn-Schimdt H, Ott J, Kozlowski P, Steen S, Jones E C, Wong H S P, Hanesch W 2003 IEEE Electron Device Lett. 24 242
[9] Liu Y C, Deal M D, Plummer J D 2004 Appl. Phys. Lett. 84 2563
[10] Gao X G, Liu C, Li J P, Zeng Y P, Li J M 2005 Microlectronics 35 76 (in chinese) [高兴国、刘 超、李建平、曾一平、李晋闽 2005 微电子学35 76]
[11] Tang Y S, Zhang J P, Hemment P L F, Sealy B J 1990 J. Appl. Phys. 67 7151
[12] Sugiyama N, Mizuno T, Suzuki M, Takagi S 2001 Jpn. J. Appl. Phys. 40 2875
[13] Cheng Z, Taraschi G, Currie M T, Leitz C W, Lee M L, Pitera A, Langdo T A, Hoyt J L, Antoniadis D A, Fitzgerald E A 2001 J. Electron. Mater. 30 37
[14] Deguet C, Sanchez L, Akatsu T, Allibert F, Dechamp J, Madeira F, Mazen F, Tauzin A, Loup V, Richtarch C, Mercier D, Signamarcheix T, Letertre F, Depuydt B, Kernevez N 2006 Electron. Lett. 42 415
[15] Tezuka T, Sugiyama N, Takagi S 2001 Appl. Phys. Lett. 79 1798
[16] Di Z F, Zhang M, Liu W L, Luo S H, Song Z T, Lin C L, Huang A P, Chu P K 2005 J. Vac. Sci. Technol. B 23 1637
[17] Zhang Y, Cai K H, Li C, Chen S Y, Lai H K, Kang J Y 2009 J. Electrochem. Soc. 156 115
[18] Eugéne J, LeGoues F K, Kesan V P, Lyer S S, d'Heurle F M 1991 Appl. Phys. Lett. 59 78
[19] Tezuka T, Sugiyama N, Mizuno T, Suzuki M, Takagi S 2001 Jpn. J. Appl. Phys. 140 2866
[20] Shimura T, Shimizu M, Horiuchi S, Watanabe H, Yasutake K, Umeno M 2006 Appl. Phys. Lett. 89 111923
[21] Di Z F, Zhang M, Liu W L, Zhu M, Lin C L, Chu P K 2005 Mater. Sci. Eng. B 124-125 153
[22] Groenen J, Carles R, Christiansen S, Albrecht M, Dorsch W, Strunk H P, Wawra H, Wagner G 1997 Appl. Phys. Lett. 71 3856
[23] Sheng H, Jiang Z M, Lu F, Huang D M 2004 Silicon-Germanium Superlattices and Low Dimensional Quantum Structures (Shanghai: Shanghai Science and Technology Press) pp54—55 (in Chinese) [盛 箎、蒋最敏、陆昉、黄大鸣 2004 硅锗超晶格及低维量子结构 (上海:上海科学技术出版社) 第54—55页]
[24] Li C, Chen Y H, Zhou Z W, Lai H K, Chen S Y 2009 Appl. Phys. Lett. 95 251102
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[1] Tracy C J, Fejes P, Theodore N D, Maniar P, Johnson E, Lamm A J, Paler A M, Malik I J, Ong P 2004 J. Electron. Mater. 33 886
[2] Celler G K, Cristoloveanu S 2003 J. Appl. Phys. 93 4955
[3] Lee M L, Fitzgerald E A 2003 Appl. Phys. Lett. 83 4202
[4] Mooney P M, Chu J O 2000 Annu. Rev. Mater. Sci. 30 335
[5] Ma L, Gao Y 2009 Acta Phys.Sin. 58 529 (in Chinese)[马 丽、高 勇 2009 物理学报 58 529]
[6] Chui C O, Ramanathan S, Triplett B B, McIntyre P C, Saraswat K C 2002 IEEE Electron Device Lett. 23 473
[7] Bai W P, Lu N, Liu J, Ramirez A, Kwong D L, Wristers D, Ritenour A, Lee L, Antoniadis D 2003 Symposium on VLSI Technology:Digest of Technical Papers Kyoto, Japan, June 10—12, 2003 p121
[8] Shang H, Okorn-Schimdt H, Ott J, Kozlowski P, Steen S, Jones E C, Wong H S P, Hanesch W 2003 IEEE Electron Device Lett. 24 242
[9] Liu Y C, Deal M D, Plummer J D 2004 Appl. Phys. Lett. 84 2563
[10] Gao X G, Liu C, Li J P, Zeng Y P, Li J M 2005 Microlectronics 35 76 (in chinese) [高兴国、刘 超、李建平、曾一平、李晋闽 2005 微电子学35 76]
[11] Tang Y S, Zhang J P, Hemment P L F, Sealy B J 1990 J. Appl. Phys. 67 7151
[12] Sugiyama N, Mizuno T, Suzuki M, Takagi S 2001 Jpn. J. Appl. Phys. 40 2875
[13] Cheng Z, Taraschi G, Currie M T, Leitz C W, Lee M L, Pitera A, Langdo T A, Hoyt J L, Antoniadis D A, Fitzgerald E A 2001 J. Electron. Mater. 30 37
[14] Deguet C, Sanchez L, Akatsu T, Allibert F, Dechamp J, Madeira F, Mazen F, Tauzin A, Loup V, Richtarch C, Mercier D, Signamarcheix T, Letertre F, Depuydt B, Kernevez N 2006 Electron. Lett. 42 415
[15] Tezuka T, Sugiyama N, Takagi S 2001 Appl. Phys. Lett. 79 1798
[16] Di Z F, Zhang M, Liu W L, Luo S H, Song Z T, Lin C L, Huang A P, Chu P K 2005 J. Vac. Sci. Technol. B 23 1637
[17] Zhang Y, Cai K H, Li C, Chen S Y, Lai H K, Kang J Y 2009 J. Electrochem. Soc. 156 115
[18] Eugéne J, LeGoues F K, Kesan V P, Lyer S S, d'Heurle F M 1991 Appl. Phys. Lett. 59 78
[19] Tezuka T, Sugiyama N, Mizuno T, Suzuki M, Takagi S 2001 Jpn. J. Appl. Phys. 140 2866
[20] Shimura T, Shimizu M, Horiuchi S, Watanabe H, Yasutake K, Umeno M 2006 Appl. Phys. Lett. 89 111923
[21] Di Z F, Zhang M, Liu W L, Zhu M, Lin C L, Chu P K 2005 Mater. Sci. Eng. B 124-125 153
[22] Groenen J, Carles R, Christiansen S, Albrecht M, Dorsch W, Strunk H P, Wawra H, Wagner G 1997 Appl. Phys. Lett. 71 3856
[23] Sheng H, Jiang Z M, Lu F, Huang D M 2004 Silicon-Germanium Superlattices and Low Dimensional Quantum Structures (Shanghai: Shanghai Science and Technology Press) pp54—55 (in Chinese) [盛 箎、蒋最敏、陆昉、黄大鸣 2004 硅锗超晶格及低维量子结构 (上海:上海科学技术出版社) 第54—55页]
[24] Li C, Chen Y H, Zhou Z W, Lai H K, Chen S Y 2009 Appl. Phys. Lett. 95 251102
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