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采用反应溅射法, 分别制备以LaTiON, HfLaON为存储层的 金属-氧化物-氮化物-氧化物-硅 电容存储器, 研究了淀积后退火气氛(N2, NH3)对其存储性能的影响. 分析测试表明, 退火前LaTiON样品比HfLaON 样品具有更好的电荷保持特性, 但后者具有更大的存储窗口 (编程/擦除电压为+/-12 V时4.8 V); 对于退火样品, 由于NH3的氮化作用, NH3退火样品比N2退火样品表现出更快的编程/擦除速度、更好的电荷保持特性和疲劳特性. 当编程/擦除电压为+/-12 V时, NH3退火HfLaON样品的存储窗口为3.8 V, 且比NH3退火LaTiON样品具有更好的电荷保持特性和疲劳特性.
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关键词:
- 金属-氧化物-氮化物-氧化物-硅存储器 /
- LaTiON /
- HfLaON /
- 退火
[1] Fang S H, Cheng X L, Huang Y, Gu H H 2007 Acta Phys. Sin. 56 6634 (in Chinese) [房少华, 程秀兰, 黄晔, 顾怀怀 2007 物理学报 56 6634]
[2] Li L L, Yu Z G, Xiao Z Q, Zhou X J 2011 Acta Phys. Sin. 60 098502 (in Chinese) [李蕾蕾, 于宗光, 肖志强, 周昕杰 2011 物理学报 60 098502]
[3] Pan T M, Chen F H, Jung J S 2010 Appl. Phys. Lett. 96 102904
[4] Pan T M, Yeh W W 2009 J. Vac. Sci. Technol. A 27 700
[5] Pan T M, Yeh W W, Chang W T, Chen K M, Chen J W, Huang K C 2007 Semiconductor Device Research Symposium 2007 International College Park, MD, USA Dec. 12-14 2007 (Piscataway, NJ, USA: IEEE) p435
[6] Huang X D, Sin J K O, Lai P T 2012 Device and Materials Reliability 12 306
[7] Xu H X, Xu J P, Li C X, Liu L, Lai P T, Chan C L 2009 IEEE International Conference of Electron Devices and Solid-State Circuits Xi'an Dec. 25-27 2009 (Piscataway, NJ, USA: IEEE) p435
[8] Arimura H, Kitano N, Naitou Y, Oku Y, Minami T, Kosuda M, Hosoi T, Shimura T, Watanabe H 2008 Appl. Phys. Lett. 92 212902
[9] Tao Q B, Lai P T 2010 IEEE International Conference of Electron Devices and Solid-State Circuits Hongkong, China Dec. 15-17 2010 (Piscataway, NJ, USA: IEEE) p1
[10] Xu H X, Xu J P, Li C X, Chan C L, Lai P T 2010 Appl. Phys. Lett. 99 903
[11] Ji F, Xu J P, Zhang H Q, Li P T, Li C X, Guan J G 2008 Research & Progress of Solid State Electronics 28 330 (in Chinese) [季峰, 徐静平, 张洪强, 黎沛涛, 李春霞, 官建国 2008 固体电子学研究与进展 28 330]
[12] Gavartin J L, Shluger A L, Foster A S, Bersuker G I 2005 J. Appl. Phys. 97 053704
[13] van Dover R B 1999 Appl. Phys. Lett. 74 3041
[14] Huang X D, Lai P T, Sin J K O 2012 Appl. Phys. A Mater. Sci. Proc. 106 6881
[15] Huang X D, Lai P T 2010 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai Nov. 1-4 2010 (Piscataway, NJ, USA: IEEE) p900
[16] Sato S, Tachi K, Kakushima K, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H 2007 Microelectronic Engineering 84 1894
[17] Hamamura H, Itoh H, Shimogaki Y, Aoyama J, Yoshimi T, Ueda J, Komiyama H 1998 Thin Solid Films 320 31
[18] Lee W G, Lee J G 2002 Journal of The Electrochemical Society 149 G1
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[1] Fang S H, Cheng X L, Huang Y, Gu H H 2007 Acta Phys. Sin. 56 6634 (in Chinese) [房少华, 程秀兰, 黄晔, 顾怀怀 2007 物理学报 56 6634]
[2] Li L L, Yu Z G, Xiao Z Q, Zhou X J 2011 Acta Phys. Sin. 60 098502 (in Chinese) [李蕾蕾, 于宗光, 肖志强, 周昕杰 2011 物理学报 60 098502]
[3] Pan T M, Chen F H, Jung J S 2010 Appl. Phys. Lett. 96 102904
[4] Pan T M, Yeh W W 2009 J. Vac. Sci. Technol. A 27 700
[5] Pan T M, Yeh W W, Chang W T, Chen K M, Chen J W, Huang K C 2007 Semiconductor Device Research Symposium 2007 International College Park, MD, USA Dec. 12-14 2007 (Piscataway, NJ, USA: IEEE) p435
[6] Huang X D, Sin J K O, Lai P T 2012 Device and Materials Reliability 12 306
[7] Xu H X, Xu J P, Li C X, Liu L, Lai P T, Chan C L 2009 IEEE International Conference of Electron Devices and Solid-State Circuits Xi'an Dec. 25-27 2009 (Piscataway, NJ, USA: IEEE) p435
[8] Arimura H, Kitano N, Naitou Y, Oku Y, Minami T, Kosuda M, Hosoi T, Shimura T, Watanabe H 2008 Appl. Phys. Lett. 92 212902
[9] Tao Q B, Lai P T 2010 IEEE International Conference of Electron Devices and Solid-State Circuits Hongkong, China Dec. 15-17 2010 (Piscataway, NJ, USA: IEEE) p1
[10] Xu H X, Xu J P, Li C X, Chan C L, Lai P T 2010 Appl. Phys. Lett. 99 903
[11] Ji F, Xu J P, Zhang H Q, Li P T, Li C X, Guan J G 2008 Research & Progress of Solid State Electronics 28 330 (in Chinese) [季峰, 徐静平, 张洪强, 黎沛涛, 李春霞, 官建国 2008 固体电子学研究与进展 28 330]
[12] Gavartin J L, Shluger A L, Foster A S, Bersuker G I 2005 J. Appl. Phys. 97 053704
[13] van Dover R B 1999 Appl. Phys. Lett. 74 3041
[14] Huang X D, Lai P T, Sin J K O 2012 Appl. Phys. A Mater. Sci. Proc. 106 6881
[15] Huang X D, Lai P T 2010 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai Nov. 1-4 2010 (Piscataway, NJ, USA: IEEE) p900
[16] Sato S, Tachi K, Kakushima K, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H 2007 Microelectronic Engineering 84 1894
[17] Hamamura H, Itoh H, Shimogaki Y, Aoyama J, Yoshimi T, Ueda J, Komiyama H 1998 Thin Solid Films 320 31
[18] Lee W G, Lee J G 2002 Journal of The Electrochemical Society 149 G1
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