后退火增强氢化非晶硅钝化效果的研究

陈剑辉; 杨静; 沈艳娇; 李锋; 陈静伟; 刘海旭; 许颖; 麦耀华

doi:10.7498/aps.64.198801

摘要

在本征氢化非晶硅(a-Si:H(i))/晶体硅(c-Si)/a-Si:H(i)异质结构上溅射ITO时, 发现后退火可大幅增加ITO/a-Si:H(i)/c-Si/a-Si:H(i)的少子寿命(从1.7 ms到4 ms). 这一增强效应可能的三个原因是: ITO/a-Si:H(i)界面场效应作用、退火形成的表面反应层影响以及退火对a-Si:H(i)材料本身的优化, 但本文研究结果表明少子寿命增强效应与ITO和表面反应层无关; 对不同沉积温度制备的a-Si:H(i)/c-Si/a-Si:H(i)异质结后退火的研究表明: 较低的沉积温度(175 ℃)后退火增强效应显著, 而较高的沉积温度(200 ℃)后退火增强效应不明显, 可以确定低温长高温后退火是获得高质量钝化效果的一种有效方式; 采用傅里叶红外吸收谱(FTIR)研究不同沉积温度退火前后a-Si:H(i)材料本身的化学键构造, 发现退火后异质结少子寿命大幅提升是由于a-Si:H(i)材料本身的结构优化造成的, 其深层次的本质是通过材料的生长温度和退火温度的优化匹配来控制包括H含量、H键合情况以及Si原子无序性程度等微观因素主导作用的一种竞争性平衡, 对这一平衡点的最佳控制是少子寿命大幅提升的本质原因.

关键词:

非晶硅 /
退火 /
钝化 /
少子寿命

作者及机构信息

1.
河北省光电信息材料重点实验室, 河北大学物理科学与技术学院, 保定 071002;

2.
光伏材料与技术国家重点实验室, 英利集团有限公司, 保定 071051

通信作者: 许颖, yaohuamai@163.com;xuying@hbu.edu.cn ; 麦耀华, yaohuamai@163.com;xuying@hbu.edu.cn

基金项目: 河北省自然科学基金项目(批准号: E2015201203, E2014201063)资助的课题.

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施引文献

[1]	Martn I, Vetter M, Orpella A, Puigdollers J, Cuevas A, Alcubilla R 2001 App. Phy. Lett. 79 2199
[2]	Garn M, Rau U, Brendle W, Martn I, Alcubilla R 2005 J. Appl. Phys. 98 093711
[3]	Chowdhury Z R, Kherani N P 2014 Appl. Phys, Lett. 105 263902
[4]	Frank F, Martin B, Christian R, Martin H, Glunz S W 2014 Sol. Energy Mater. Sol. Cells 120 270
[5]	Vernhes R, Zabeida O, Klemberg-Sapieha J E, Martinu L 2006 J. Appl. Phys. 100 063308
[6]	Qiu H B, Li H Q, Liu B W, Zhang X, Shen Z N 2014 Chin. Phys. B 23 027301
[7]	Zhu X H, Chen G H, Yin S Y, Rong Y D, Zhang W L, Hu Y H 2005 Chin. Phys. Soc. 14 0834
[8]	Sangho K, Vinh A D, Chonghoon S, Jaehyun C, Youngseok L, Nagarajan B, Shihyun A, Youngkuk K, Junsin Y 2012 Thin Solid Films 521 45
[9]	Hoex B, Schmidt J J, Pohl P, Van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 044903
[10]	Bordihn S, Mertens V, Engelhart P, Kersten F, Mandoc M M, Muller J W, Kessel W M M 2012 ECS J. Sol-Gel Sci. Technol. 1 320
[11]	Tfflinger J A, Laades A, Korte L, Leendertz C, Montaez L M, Sturzebecher U, Sperlich H P, Rech B 2015 Sol. Energy Mater. Sol. Cells 135 49
[12]	Dingemans G, Terlinden N M, Pierreux D, Profijt H B, Sanden M C M, Kessels W M M 2011 Electrochem. Solid-State Lett. 14 H1
[13]	Lei Q S, Wu Z M, Geng X H, Zhao Y, Sun J, Xi J P 2006 Chin. Phys. Soc. 15 3033-06
[14]	Geissbuhler J, Wolf S D, Demaurex B, Seif J P, Alexander D T L, Barraud L, Ballif C 2013 App. Phy. Lett. 102 231604
[15]	Keiichiro M, Masato S, Taiki H, Daisuke F, Motohide K, Naoki Y, Tsutomu Y, Yoshinari I, Takahiro M, Naoteru M, Tsutomu Y, Tsuyoshi T, Mikio T, Eiji M, Shingo O 2014 IEEE J. Photovolt. 4 1433
[16]	Xue Y, Gao C J, Gu J H, Feng Y Y, Yang S E, Lu J X, Huang Q, Feng Z Q 2013 Acta Phys. Sin. 62 197301(in Chinese) [薛源, 郜超军, 谷锦华, 冯亚阳, 杨仕娥, 卢景霄, 黄强, 冯志强 2013 物理学报 62 197301]
[17]	Zhao Z Y, Zhang X D, Wang F Y, Jiang Y J, Du J, Gao H B, Zhao Y, Liu C C 2014 Acta Phys. Sin. 63 136802(in Chinese) [赵振越, 张晓丹, 王奉友, 姜元建, 杜建, 高海波, 赵颖, 刘彩池 2014 物理学报 63 136802]
[18]	Zhu X H, Chen G H, Zhang W L, Ding Y, Ma Z J, Hu Y H, He B, Rong Y D 2005 Chin. Phys. Soc. 14 2348
[19]	Stefaan D W, Antoine D, Zachary C H, Christophe B 2012 Green 2 7
[20]	Takeshi K, Takeshi Y 2004 Solar Energy Mater. Solar Cells. 81 119
[21]	Stefaan D W, Michio K 2007 App. Phy. Lett. 90 042111
[22]	Aaesha A, Kazi I, Ammar N 2013 Sol. Energy 98 236
[23]	Miroslav M, Michal N, Jaroslav K, Marina F, Cosimo G, Giovanni M, Luca V, Salvatore L 2014 Mat. Sci. Eng. B 189 1
[24]	Bndicte D, Stefaan D W, Antoine D, Zachary C H, Christophe B 2012 App. Phy. Lett. 101 171604
[25]	Oh W K, HussainS Q, Lee Y J, Lee Y, Ahn S, Yi J 2012 Mater. Res. Bull. 47 3032
[26]	Shirakata S, Sakemi T, Awai K, Yamamoto T 2006 Superlattices Microstruct. 39 218
[27]	Kakeno T, Sakai K, Komaki H, Yoshino K, Sakemi H, Awai K, Yamamoto T, Ikari T 2005 Mater. Sci. Eng. B 118 70
[28]	Thomas M, Stefan S, Maximilian S, Wolfgang R F 2008 App. Phy. Lett. 92 033504
[29]	Riither R, Livingstone J 1994 Thin Solid Films 251 30
[30]	Zhang D, Tavakoliyaraki A, Wu Y, Swaaij R. A. C. M. M. van, Zeman M 2011 Energy Procedia 8 207
[31]	Yablonovitch E, Allara D L, Chang C C, Gmitter T, Bright T B 1986 Phys. Rev. Lett. 57 249
[32]	Jonathon M, Daniel M, Andres C 2009 App. Phy. Lett. 94 162102
[33]	Stefaan D W, Sara O, Christophe B 2008 App. Phy. Lett. 93 032101
[34]	Schulze T F, Beushausen H N, Leendertz C, Dobrich A, Rech B, Korte L 2010 App. Phy. Lett. 96 252102

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