H2气氛退火处理对Nb掺杂TiO2薄膜光电性能的影响

张彬; 王伟丽; 牛巧利; 邹贤劭; 董军; 章勇

doi:10.7498/aps.63.068102

摘要

采用电子束沉积方法，以钛酸锶（SrTiO3）为衬底制备铌（Nb）掺杂TiO2薄膜并研究后续H2气氛退火处理对其薄膜样品光电性能的影响. 结果发现H2气氛热退火处理能有效改善Nb掺杂TiO2薄膜的导电率，最佳电阻率达到5.46×10-3 Ω·cm，在可见光范围内的透光率为60%–80%. 导电性能的改善与H2气氛退火处理后多晶薄膜的晶粒尺寸变大和大量的氧空位形成及H原子掺杂有关.

关键词:

Nb掺杂TiO2 /
电子束沉积 /
退火 /
薄膜

Niobium-doped TiO2 thin films are deposited on strontium titanate substrates by E-beam evaporation deposition. Effects of post-annealing in hydrogen atmosphere on their optoelectrical properties are studied. The results show that the annealing in hydrogen atmosphere can enhance their conductivity values efficiently. The corresponding optium resistivity reaches 5.46×10-3 Ω·cm, and the transmittance values of the thin films are 60%–80%. The improvement in the conductive performance is attributed to the increase of the grain size of polycrystalline thin film, the formation of a lot of oxygen vacancies and H-doping caused by annealing in hydrogen atmosphere.

Keywords:

作者及机构信息

1.
华南师范大学, 光电子材料与技术研究所, 广州 510631

基金项目: 广东省科技攻关项目（批准号：2012B010200032）、国家自然科学基金（批准号：U1174001）、广东省自然科学基金（批准号：S2011010003400）、广东省省部产学研项目（批准号：2011A091000033）和广州市珠江科技新星项目（批准号：2012J2200023）资助的课题.

Authors and contacts

1.
Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China

Funds: Project supported by the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2012CB010200032), the National Natural Science Foundation of China (Grant No. U1174001), the Nature Science Foundation of Guangdong Province, China (Grant No. S2011010003400), the Production and Research Project of Guangdong Province and Ministry of Education, China (Grant No. 2011A091000033), and the New Star of Science and Technology Project of Zhujiang, Guangzhou Province, China (Grant No. 2012J2200023).

参考文献

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[6]	Taylor S R, McLennan S H 1986 The Continental Crust: Its Composition and Evolution (Oxford: Blackwell) p312
[7]	Hoang N L H, Yamada N, Hitosugi T, Kasai J, Nakao S, Shimada T, Hasegawa T 2008 Appl. Phys. Express 1 115001
[8]	Sato Y, Akizuki H, Kamiyama T, Shigesato Y 2008 Thin Solid Films 516 5758
[9]	Kasai J, Hitosugi T, Moriyama M, Goshonoo K, Hoang N L H, Nakao S, Yamada N, Hasegawa T 2010 J. Appl. Phys. 107 053110
[10]	Luo X D, Di G Q 2012 Acta Phys. Sin. 61 206803 (in Chinese) [罗晓东, 狄国庆 2012 物理学报 61 206803]
[11]	Zhang R S, Liu Y, Teng F, Song C L, Han G R 2012 Acta Phys. Sin. 61 017101 (in Chinese) [章瑞铄, 刘涌, 滕繁, 宋晨路, 韩高荣 2012 物理学报 61 017101]
[12]	Xue J, Pan F M, Pei Y 2013 Acta Phys. Sin. 62 158103 (in Chinese) [薛将, 潘风明, 裴煜 2013 物理学报 62 158103]
[13]	Gao P, Wu J, Liu Q J, Zhou W F 2010 Chin. Phys. B 19 087103
[14]	Wang Q, Liang J F, Zhang R H, Li Q, Dai J F 2013 Chin. Phys. B 22 057801
[15]	Park J H, Kang S J, Na S, Lee H H, Kim S W, Hosono H, Kim H K 2011 Sol. Energy Mater. Sol. Cells 95 2178
[16]	Gillispie M A, van Hest M F A M, Dabney M S, Perkins J D, Ginley D S 2007 J. Appl. Phys. 101 033125
[17]	Seo S J, Jeon J H, Hwang Y H, Bae B S 2011 Appl. Phys. Lett. 99 152102
[18]	Cao L, Zhu L P, Ye Z Z 2013 J. Phys. Chem. Solids 74 668
[19]	Park J H, Choi Y Y, Kim H K, Lee H H, Na S I 2010 J. Appl. Phys. 108 083509
[20]	Park S M, Ikegami T, Ebihara K, Shin P K 2006 Appl. Surf. Sci. 253 1522
[21]	Panayotov D A, Yates Jr J T 2007 Chem. Phys. Lett. 436 204
[22]	Valentin C D, Pacchioni G 2009 J. Phys. Chem. C 113 20543

施引文献

[1]	Ginley D S, Bright C 2000 Mater. Res. Bull. 25 15
[2]	Hamberg I, Granqvist C G 1986 J. Appl. Phys. 60 R123
[3]	Furubayashi Y, Hitosugi T, Yamamoto Y, Inaba K, Kinoda G, Hirose Y, Shimada T, Hasegawa T 2005 Appl. Phys. Lett. 86 252101
[4]	Hitosugi T, Furubayashi Y, Ueda A, Itabashi K, Inaba K, Hirose Y, Kinoda G, Yamamoto Y, Shimada T, Hasegawa T 2005 Jpn. J. Appl. Phys. 44 L1063
[5]	Chen D M, Xu G, Miao L, Chen L H, Nakao S, Jin P 2010 J. Appl. Phys. 107 063707
[6]	Taylor S R, McLennan S H 1986 The Continental Crust: Its Composition and Evolution (Oxford: Blackwell) p312
[7]	Hoang N L H, Yamada N, Hitosugi T, Kasai J, Nakao S, Shimada T, Hasegawa T 2008 Appl. Phys. Express 1 115001
[8]	Sato Y, Akizuki H, Kamiyama T, Shigesato Y 2008 Thin Solid Films 516 5758
[9]	Kasai J, Hitosugi T, Moriyama M, Goshonoo K, Hoang N L H, Nakao S, Yamada N, Hasegawa T 2010 J. Appl. Phys. 107 053110
[10]	Luo X D, Di G Q 2012 Acta Phys. Sin. 61 206803 (in Chinese) [罗晓东, 狄国庆 2012 物理学报 61 206803]
[11]	Zhang R S, Liu Y, Teng F, Song C L, Han G R 2012 Acta Phys. Sin. 61 017101 (in Chinese) [章瑞铄, 刘涌, 滕繁, 宋晨路, 韩高荣 2012 物理学报 61 017101]
[12]	Xue J, Pan F M, Pei Y 2013 Acta Phys. Sin. 62 158103 (in Chinese) [薛将, 潘风明, 裴煜 2013 物理学报 62 158103]
[13]	Gao P, Wu J, Liu Q J, Zhou W F 2010 Chin. Phys. B 19 087103
[14]	Wang Q, Liang J F, Zhang R H, Li Q, Dai J F 2013 Chin. Phys. B 22 057801
[15]	Park J H, Kang S J, Na S, Lee H H, Kim S W, Hosono H, Kim H K 2011 Sol. Energy Mater. Sol. Cells 95 2178
[16]	Gillispie M A, van Hest M F A M, Dabney M S, Perkins J D, Ginley D S 2007 J. Appl. Phys. 101 033125
[17]	Seo S J, Jeon J H, Hwang Y H, Bae B S 2011 Appl. Phys. Lett. 99 152102
[18]	Cao L, Zhu L P, Ye Z Z 2013 J. Phys. Chem. Solids 74 668
[19]	Park J H, Choi Y Y, Kim H K, Lee H H, Na S I 2010 J. Appl. Phys. 108 083509
[20]	Park S M, Ikegami T, Ebihara K, Shin P K 2006 Appl. Surf. Sci. 253 1522
[21]	Panayotov D A, Yates Jr J T 2007 Chem. Phys. Lett. 436 204
[22]	Valentin C D, Pacchioni G 2009 J. Phys. Chem. C 113 20543

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