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物理学报. 2003, 52(6): 1484-1487.
doi: 10.7498/aps.52.1484.
不同衬底上的ZnO薄膜紫外光致发光
- 收稿日期: 2002-07-10
- 修回日期: 2002-10-19
- 刊出日期: 2003-03-05
English Abstract
Ultra violet photoluminescenc of ZnO films on different substrates
- Received Date:
10 July 2002
- Accepted Date:
19 October 2002
- Published Online:
05 March 2003
Abstract: Polycrystalline ZnO films with a good preferred orientation were deposited on sapphire, Si and quartz substrates by rf magnetron sputtering. A 356 nm Ultraviolet (UV) photoluminescence (PL) peak and a 446 nm blue peak were observed at room temperature when excited with 270 nm light. After high-temperature annealing in oxygen, the crystallinity of the films was improved. The intensity of the UV emission increased by 7 and 14 times, respectively, for the films on sapphire and quartz substrates respectively. We conclude that the UV emission originates from the inter-band transition of electrons and the blue emission is due to the transition of electrons from the shallow donor level of the oxygen vacancies to the valence band.
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Keywords:
- ZnO films /
- rf magnetron sputtering /
- UV photoluminescence /
- annealing
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