Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal

Ma Xiao-Tao Zheng Wan-Hua Ren Gang Fan Zhong-Chao Chen Liang-Hui

Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal

Ma Xiao-Tao, Zheng Wan-Hua, Ren Gang, Fan Zhong-Chao, Chen Liang-Hui
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  3766
  • PDF Downloads:  1961
  • Cited By: 0
Publishing process
  • Received Date:  31 May 2006
  • Accepted Date:  04 July 2006
  • Published Online:  05 January 2007

Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal

  • 1. (1)半导体集成技术工程研究中心,中国科学院半导体研究所,北京 100083; (2)纳米光电子实验室,中国科学院半导体研究所,北京 100083

Abstract: Inductively coupled plasma (ICP) etching of InP in Cl2/BCl3 gas mixtures is studied in order to achieve low-damage and high-anisotropy etching of two-dimensional InP/InGaAsP photonic crystal. The etching mechanisms are discussed and the effect of plasma heating on wafer during etching is analyzed. It is shown that the balance between the undercut originating from plasma heating and the redeposition of sputtering on the side-wall is crucial for highly anisotropic etching, and the balance point moves toward lower bias when the ICP power is increased. High aspect-ratio etching at the DC bias of 203 V is obtained. Eventually, photonic crystal structure with nearly 90° side-wall is achieved at low DC bias after optimization of the gas mixture.

Catalog

    /

    返回文章
    返回