Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

A new Schottky barrier structure of GaN-based ultraviolet photodetector

Zhou Mei Zuo Shu-Hua Zhao De-Gang

A new Schottky barrier structure of GaN-based ultraviolet photodetector

Zhou Mei, Zuo Shu-Hua, Zhao De-Gang
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  4622
  • PDF Downloads:  1334
  • Cited By: 0
Publishing process
  • Received Date:  28 December 2006
  • Accepted Date:  01 February 2007
  • Published Online:  20 September 2007

A new Schottky barrier structure of GaN-based ultraviolet photodetector

  • 1. (1)中国科学院半导体研究所集成光电子学国家重点实验室,北京 100083; (2)中国农业大学理学院应用物理系,北京 100083

Abstract: A new GaN-based ultraviolet photodetector with Schottky barrior structure is proposed. Comparied with the conventional i-GaN/n+-GaN structure,there is an additional thin n-AlGaN cap layer on the i-GaN in the new structure. The simulation result demonstrates that the new structure leads to an increased quantum efficiency in GaN photodetection,since the negative effect of surface states on the photodetector is reduced in the new structure. In addition,it is suggested that the performance of device with the new structure could be further improved by employing an even thinner AlGaN cap layer with higher carrier concentration.

Catalog

    /

    返回文章
    返回