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Wang Shun-Li, Wang Ya-Chao, Guo Dao-You, Li Chao-Rong, Liu Ai-Ping. NiO/GaN p-n junction ultraviolet photodetector and self-powered technology. Acta Physica Sinica,
2021, 70(12): 128502.
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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica,
2020, 69(4): 047201.
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Li Jiang-Jiang, Gao Zhi-Yuan, Xue Xiao-Wei, Li Hui-Min, Deng Jun, Cui Bi-Feng, Zou De-Shu. On-chip fabrication of lateral growth ZnO nanowire array UV sensor. Acta Physica Sinica,
2016, 65(11): 118104.
doi: 10.7498/aps.65.118104
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Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi. Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica,
2014, 63(21): 217806.
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Li Qian-Qian, Hao Qiu-Yan, Li Ying, Liu Guo-Dong. Theory study of rare earth (Ce, Pr) doped GaN in electronic structrue and optical property. Acta Physica Sinica,
2013, 62(1): 017103.
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Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng. Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode. Acta Physica Sinica,
2013, 62(21): 217301.
doi: 10.7498/aps.62.217301
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Wang Yan-Wen, Wu Hua-Rui. Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot. Acta Physica Sinica,
2012, 61(10): 106102.
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Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu. Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector. Acta Physica Sinica,
2010, 59(12): 8903-8909.
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Zhou Mei, Zhao De-Gang. A new p-n structure ultraviolet photodetector with p－-GaN active region. Acta Physica Sinica,
2009, 58(10): 7255-7260.
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Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui. Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector. Acta Physica Sinica,
2009, 58(11): 7952-7957.
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Feng Qian, Hao Yue, Yue Yuan-Zheng. Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film. Acta Physica Sinica,
2008, 57(3): 1886-1890.
doi: 10.7498/aps.57.1886
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Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
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Zhou Mei, Chang Qing-Ying, Zhao De-Gang. A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica,
2008, 57(4): 2548-2553.
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Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di. Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2007, 56(10): 6003-6007.
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Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing. Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica,
2007, 56(6): 3453-3457.
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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou. MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica,
2007, 56(11): 6717-6721.
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You Da, Xu Jin-Tong, Tang Ying-Wen, He Zheng, Xu Yun-Hua, Gong Hai-Mei. Research of two-dimensional hole gas in p-GaN/Al0.35Ga0.65N/GaN strained quantum-well. Acta Physica Sinica,
2006, 55(12): 6600-6605.
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Sun Xiao-Wei, Chu Yan-Dong, Liu Zi-Jiang, Liu Yu-Xiao, Wang Cheng-Wei, Liu Wei-Min. Molecular dynamics study on the structural and thermodynamic properties of the zinc-blende phase of GaN at high pressures and high temperatures. Acta Physica Sinica,
2005, 54(12): 5830-5836.
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Li Pei-Xian, Hao Yue, Fan Long, Zhang Jin-Cheng, Zhang Jin-Feng, Zhang Xiao-Ju. AlGaN/GaN heterojunction wavefunction half analytic model based on quantum distu rbance. Acta Physica Sinica,
2003, 52(12): 2985-2988.
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ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN. THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica,
2001, 50(9): 1800-1804.
doi: 10.7498/aps.50.1800
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