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A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique

Ge Ji Jin Zhi Su Yong-Bo Cheng Wei Liu Xin-Yu Wu De-Xin

A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique

Ge Ji, Jin Zhi, Su Yong-Bo, Cheng Wei, Liu Xin-Yu, Wu De-Xin
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Publishing process
  • Received Date:  27 March 2009
  • Accepted Date:  21 April 2009
  • Published Online:  05 June 2009

A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique

  • 1. 中国科学院微电子研究所,北京 100029

Abstract: The influence on the base-collector junction capacitance Cbc of the energy band structure of the InP heterojunction bipolar transistors is researched. A physical model of small-signal InP double heterojunction bipolar transistor (DHBT) is developed, which takes into account the base-emitter and collector-emitter metalisations by using two additional capacitances Cmb and Cmc. The resistance of the model is divided into the intrinsic resistance, the extrinsic resistance and the parasitic resistance. Meanwhile, a physically meaningful small-signal parameter extraction procedure for the model is presented, in which all the equivalent circuit elements are extracted without reference to numerical optimization. An experimental validation is carried out, and excellent results are obtained over a wide range of bias points, which demonstrates good modeling accuracy.

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