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Activation mechanism of negative electron affinity GaN photocathode

Chang Ben-Kang Gao Pin Qiao Jian-Liang Tian Si Du Xiao-Qing

Activation mechanism of negative electron affinity GaN photocathode

Chang Ben-Kang, Gao Pin, Qiao Jian-Liang, Tian Si, Du Xiao-Qing
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  • Received Date:  08 December 2008
  • Accepted Date:  24 December 2008
  • Published Online:  20 August 2009

Activation mechanism of negative electron affinity GaN photocathode

  • 1. (1)南京理工大学电子工程与光电技术学院,南京 210094; (2)南京理工大学电子工程与光电技术学院,南京 210094;南阳理工学院电子与电气工程系,南阳 473004; (3)重庆大学光电工程学院,重庆 400030

Abstract: The photocurrent curves during either Cs or Cs/O activation of GaN photocathode were tested by using dedicated experimental system for activation and evaluation of negative electron affinity (NEA) photocathode. Aiming at explaining the formation of NEA property of GaN photocathode and according to the rule of photocurrent change during activation period and the surface model of a fully activated photocathode,the activation mechanism for NEA GaN photocathode was studied. The experiment results show that:the obvious NEA property is be induced in GaN photocathode mainly due to the activation by Cs. The increase extent of photocurrent is not large after introducing O during Cs/O activation process for GaN photocathode. The NEA property formation reasons of GaN photocathode after being activated successfully can be well explained using the double dipole layer model [GaN(Mg):Cs]:O—Cs.

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