Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Influence of well structure on efficiency of organic light-emitting diodes

Zhu Hai-Na Xu Zheng Zhao Su-Ling Zhang Fu-Jun Kong Chao Yan Guang Gong Wei

Influence of well structure on efficiency of organic light-emitting diodes

Zhu Hai-Na, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Kong Chao, Yan Guang, Gong Wei
PDF
Get Citation
  • Five kinds of organic quantum well structured light-emitting devices are fabricated, and their electrical characteristics are studied. The effects of quantum well period number and barrier thickness on device performance are analyzed. Experimental results show that appropriate cycle quantum well structured devices have higher brightness and current efficiency than the traditional three-layer devices. That is because of the limitation effect of quantum well structure on electrons and holes,and the structure of this kind could improve the composite probability of excitons in the light-emitting layer,thereby increasing brightness and efficiency of OLED. There is also an effect on brightness and efficiency when the potential well layer thickness of quantum well structured device is changed. Consequently,the adoption of appropriate potential well layer thickness can also improve the brightness and the efficiency of the device.
    • Funds:
    [1]

    Lin C F,Su Y S,Wu C H 2004 Jpn. J. Appl. Phys. 43 7032

    [2]

    Nikiforov A Y,Cargill III G S,Guo S P,Tamargo M C 2008 J. Appl. Phys. 104 114506

    [3]

    So F F,Forrest S R,Shi Y Q,Steier W H 1990 Appl. Phys. Lett. 56 674

    [4]

    So F F,Forrest S R 1991 Phys. Rev. Lett. 66 2649

    [5]

    Fujita S,Nakazawa T,Asano M,Fujita S 2000 Jpn. J. Appl. Phys. 39 5301

    [6]

    Ohmori Y,Fujii A,Uchida M,Morishima C,Yoshino K 1993 Appl. Phys. Lett. 63 1871

    [7]

    Ohmori Y,Fujii A,Uchida M,Morishima C,Yoshino K 1993 Appl. Phys. Lett. 62 3250

    [8]

    An H Y,Hou J Y,Chen B J,Shen J C,Liu S Y 1998 Thin Solid Films 326 201

    [9]

    Xie ZY,Huang J S,Li C N,Liu S Y,Wang Y,Shen J C,Wang Y,Li YQ,Shen J C 1999 Appl. Phys. Lett. 74 641

    [10]

    Zhao D W,Song S F,Zhang F J,Zhao S L,Xu C,Xu Z 2007 Displays 28 81

    [11]

    Zhao D W,Song S F,Zhao S L,Zhang F J,Xu Z,Xu X R 2007 J. Phys. D:Appl. Phys. 40 1915

    [12]

    Yang K X,Gao W B,Liu H Y,Li C N,Zhao Y,Liu S Y,Huang J S. 2001 Chin. Phys. Lett. 18 1658

    [13]

    Song S F,Zhao D W,Xu Z,Xu X R 2007 Acta Phys. Sin. 56 3499 (in Chinense) [宋淑芳、赵德威、徐 征、徐叙瑢 2007 物理学报 56 3499]

    [14]

    Qiu Y,Gao Y D,Wei P,Wang L D 2002 Appl. Phys. Lett. 80 2628

    [15]

    Qiu Y,Gao Y D,Wang L D,Wei P,Duan L,Zhang D Q,Dong G F 2002 Appl. Phys. Lett. 81 3540

    [16]

    Yang S H,Hong B C,Huang S F 2009 J. Appl. Phys. 105 113105

  • [1]

    Lin C F,Su Y S,Wu C H 2004 Jpn. J. Appl. Phys. 43 7032

    [2]

    Nikiforov A Y,Cargill III G S,Guo S P,Tamargo M C 2008 J. Appl. Phys. 104 114506

    [3]

    So F F,Forrest S R,Shi Y Q,Steier W H 1990 Appl. Phys. Lett. 56 674

    [4]

    So F F,Forrest S R 1991 Phys. Rev. Lett. 66 2649

    [5]

    Fujita S,Nakazawa T,Asano M,Fujita S 2000 Jpn. J. Appl. Phys. 39 5301

    [6]

    Ohmori Y,Fujii A,Uchida M,Morishima C,Yoshino K 1993 Appl. Phys. Lett. 63 1871

    [7]

    Ohmori Y,Fujii A,Uchida M,Morishima C,Yoshino K 1993 Appl. Phys. Lett. 62 3250

    [8]

    An H Y,Hou J Y,Chen B J,Shen J C,Liu S Y 1998 Thin Solid Films 326 201

    [9]

    Xie ZY,Huang J S,Li C N,Liu S Y,Wang Y,Shen J C,Wang Y,Li YQ,Shen J C 1999 Appl. Phys. Lett. 74 641

    [10]

    Zhao D W,Song S F,Zhang F J,Zhao S L,Xu C,Xu Z 2007 Displays 28 81

    [11]

    Zhao D W,Song S F,Zhao S L,Zhang F J,Xu Z,Xu X R 2007 J. Phys. D:Appl. Phys. 40 1915

    [12]

    Yang K X,Gao W B,Liu H Y,Li C N,Zhao Y,Liu S Y,Huang J S. 2001 Chin. Phys. Lett. 18 1658

    [13]

    Song S F,Zhao D W,Xu Z,Xu X R 2007 Acta Phys. Sin. 56 3499 (in Chinense) [宋淑芳、赵德威、徐 征、徐叙瑢 2007 物理学报 56 3499]

    [14]

    Qiu Y,Gao Y D,Wei P,Wang L D 2002 Appl. Phys. Lett. 80 2628

    [15]

    Qiu Y,Gao Y D,Wang L D,Wei P,Duan L,Zhang D Q,Dong G F 2002 Appl. Phys. Lett. 81 3540

    [16]

    Yang S H,Hong B C,Huang S F 2009 J. Appl. Phys. 105 113105

  • [1] Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan. The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica, 2008, 57(12): 7860-7864. doi: 10.7498/aps.57.7860
    [2] He Yue-Di, Xu Zheng, Zhao Su-Ling, Liu Zhi-Min, Gao Song, Xu Xu-Rong. Electroluminescent energy transfer of hybrid quantum dotsdevice. Acta Physica Sinica, 2014, 63(17): 177301. doi: 10.7498/aps.63.177301
    [3] Liu Jing, Zheng Wei-Min, Song Ying-Xin, Chu Ning-Ning, Li Su-Mei, Cong Wei-Yan. Preparation and measurement of far-infrared electroluminescence emitter based on quantum confined acceptors. Acta Physica Sinica, 2010, 59(4): 2728-2733. doi: 10.7498/aps.59.2728
    [4] SUN YONG-KE, HENG CHENG-LIN, WANG SUN-TAO, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN -HUA. ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2) NANOSCALE DOUBLE -BARRIER/n+-Si STRUCTURE. Acta Physica Sinica, 2000, 49(7): 1404-1408. doi: 10.7498/aps.49.1404
    [5] Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui. Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices. Acta Physica Sinica, 2014, 63(3): 037801. doi: 10.7498/aps.63.037801
    [6] Chang Yan-Ling, Zhang Qi-Feng, Sun Hui, Wu Jin-Lei. Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure. Acta Physica Sinica, 2007, 56(4): 2399-2404. doi: 10.7498/aps.56.2399
    [7] Dong Heng-Ping, Wang Dan-Qing, Chen Kun-Ji, Ding Hong-Lin, Xu Jun, Li Wei, Ma Zhong-Yuan, Huang Rui. Electroluminescence from Si-rich SiNx/N-rich SiNy multilayer light-emitting devices. Acta Physica Sinica, 2009, 58(3): 2072-2076. doi: 10.7498/aps.58.2072
    [8] Li Xue-Chen, He Shou-Jie, Ai Xi-Cheng, Zhang Jian-Ping, Chen Qi-Dai, Wang Long. The light pulses and the spectra of conical bubbles sonoluminescence. Acta Physica Sinica, 2005, 54(2): 977-981. doi: 10.7498/aps.54.977
    [9] Yang Zhi-Hu, Zhao Yong-Tao, Yin Wei-Wei, Li Ning-Xi, Zhang Xiao-An. Precision measurement of excited spectra of oxygen ions. Acta Physica Sinica, 2006, 55(9): 4520-4527. doi: 10.7498/aps.55.4520
    [10] Li Gang, Nie Chao-Qun, Li Yu-Tong, Zhang Yi, Zhang Jie, Li Han-Ming, Li Ying-Jun, Cheng Tao. The characteristics of the spectrum emitted from dielectric barrier-discharge plasmas. Acta Physica Sinica, 2008, 57(2): 969-974. doi: 10.7498/aps.57.969
  • Citation:
Metrics
  • Abstract views:  3251
  • PDF Downloads:  809
  • Cited By: 0
Publishing process
  • Received Date:  02 January 2010
  • Accepted Date:  25 February 2010
  • Published Online:  15 November 2010

Influence of well structure on efficiency of organic light-emitting diodes

  • 1. Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China

Abstract: Five kinds of organic quantum well structured light-emitting devices are fabricated, and their electrical characteristics are studied. The effects of quantum well period number and barrier thickness on device performance are analyzed. Experimental results show that appropriate cycle quantum well structured devices have higher brightness and current efficiency than the traditional three-layer devices. That is because of the limitation effect of quantum well structure on electrons and holes,and the structure of this kind could improve the composite probability of excitons in the light-emitting layer,thereby increasing brightness and efficiency of OLED. There is also an effect on brightness and efficiency when the potential well layer thickness of quantum well structured device is changed. Consequently,the adoption of appropriate potential well layer thickness can also improve the brightness and the efficiency of the device.

Reference (16)

Catalog

    /

    返回文章
    返回