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Effects of substrate resistivity and interface defect density on performance of solar cell with silicon heterojunctions

Sun Tie-Tun Di Ming-Dong Sun Yong-Tang Wang Hao Zhou Jun

Effects of substrate resistivity and interface defect density on performance of solar cell with silicon heterojunctions

Sun Tie-Tun, Di Ming-Dong, Sun Yong-Tang, Wang Hao, Zhou Jun
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  • Received Date:  25 February 2010
  • Accepted Date:  04 May 2010
  • Published Online:  05 June 2010

Effects of substrate resistivity and interface defect density on performance of solar cell with silicon heterojunctions

  • 1. (1)Changzhou Yijing Optical-electronic Company Limited, Changzhou 213223, China; (2)Department of Optical Engineering, Jiangsu University, Zhenjiang 212013, China; (3)Institute of Optics and Optoelectronics, Ningbo University, Ningbo 315211, China;Department of Optical Engineering, Jiangsu University, Zhenjiang 212013, China

Abstract: For silicon heterojunction solar cell with p-type a-Si:H back surface field, the effects of substrate resistivity on the performance of solar cell with different defect densities on the front and the rear surfaces of the p-type c-Si wafer are investigated numerically by computer simulation. The results indicate that the optimized resistivity of the substrate (ρop) is related to the interface defect density on the front surface of c-Si wafer (Dit1), and ρopincreases with the increase of Dit1.The value scale of resistivity of substrate is influenced greatly by the interface defect density on the rear surface of c-Si wafer (Dit2) for ρ>ρop, and the larger the value of Dit2, the smaller will the range of acceptable ρ value be.

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