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Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism

Peng Ying-Cai Fan Zhi-Dong Bai Zhen-Hua Ma Lei

Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism

Peng Ying-Cai, Fan Zhi-Dong, Bai Zhen-Hua, Ma Lei
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  • Abstract views:  3874
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  • Received Date:  25 February 2009
  • Accepted Date:  08 June 2009
  • Published Online:  05 January 2010

Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism

  • 1. (1)河北大学电子信息工程学院,保定 071002; (2)河北大学电子信息工程学院,保定 071002;中国科学院半导体研究所半导体材料科学重点实验室,北京 100083

Abstract: High quality silicon nanowires (SiNWs) were grown directly from n-(111) silicon single crystal substrate by using Au film as a metallic catalyst. The diameter and length of the formed nanowires are 30—60 nm and from several micrometers to sereral tens of micrometers, respectively. The effects of Au film thickness, annealing temperature, growth time and N2 gas flow rate on the formation of the nanowires were experimentally investigated. The results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. The formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism.

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