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Laser-induced voltage effect in Pb(Zr0.3Ti0.7)O3 ferroelectric thin film

Zhang Hui Zhang Peng-Xiang Hu Jun-Tao Zhu Jie Xie Kang

Laser-induced voltage effect in Pb(Zr0.3Ti0.7)O3 ferroelectric thin film

Zhang Hui, Zhang Peng-Xiang, Hu Jun-Tao, Zhu Jie, Xie Kang
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  • Received Date:  07 January 2008
  • Accepted Date:  13 December 2009
  • Published Online:  15 September 2010

Laser-induced voltage effect in Pb(Zr0.3Ti0.7)O3 ferroelectric thin film

  • 1. (1)Institute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, Kunming 650051,China; (2)Institute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, Kunming 650051,China;Key Lab of Broadband Optical Fiber Transmission of Communication Networks, University of Electronic Science and Technology of China,; (3)Key Lab of Broadband Optical Fiber Transmission of Communication Networks, University of Electronic Science and Technology of China, Chengdu 610054,China

Abstract: Pb(Zr0.3Ti0.7)O3(PZT)thin films have been grown by pulsed laser deposition (PLD) on LaSrAlTaO3 (LSATO),LaAlO3(LAO) and SrTiO3(STO) single crystal vicinal cut substrates. Laser-induced voltage(LIV) effect was also found in PZT thin films grown on the three vicinal cut substrates for the first time. LIV signals increased with the single-pulse laser energy following the linear relation in case of c-axis orientation of thin film; but this linear relation was not followed obviously in case of a-axis orientation of thin film. This result shows that the LIV effect in PZT thin film is the atomic layer thermopile effect, in the which anisotropy of Seebeck coefficient plays an important role. Through realizing impedance-matching of thin films and transmission line, LITV signal response time has been optimized, the time of rising edge dropped from 60 ns to 26 ns, the full width at half maximum dropped from 260 ns to 38 ns.

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