Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Mechanism for long pulse laser-induced hard damage to the MOS pixel of CCD image sensor

Bi Juan Zhang Xi-He Ni Xiao-Wu

Mechanism for long pulse laser-induced hard damage to the MOS pixel of CCD image sensor

Bi Juan, Zhang Xi-He, Ni Xiao-Wu
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  4298
  • PDF Downloads:  800
  • Cited By: 0
Publishing process
  • Received Date:  07 April 2011
  • Accepted Date:  10 May 2011
  • Published Online:  15 November 2011

Mechanism for long pulse laser-induced hard damage to the MOS pixel of CCD image sensor

  • 1. School of Science, Changchun University of Science and Technology, Changchun 130022, China;
  • 2. School of Science, Nanjing University of Science and Technology, Nanjing 210094, China

Abstract: The interaction process between 1.06 m wavelength Nd:YAG long pulse laser with a millisecond pulse width and the MOS pixel of frame transfer area CCD image sensor and its hard damage mechanism are studied by the finite element method. The thermal-mechanical coupled modeling for long pulse laser irradiation of a MOS pixel is established, and the distributions of temperature and stress are obtained. The results show that the spallations between O layer and S layer appear due to the S layer radial stress on the surface exceeding the compressive strength under the action of the long pulse laser, then it will extend to the entire layer before melting by radial stress,axial stress and hoop stress. Hard damage of pixel occurs as spallation, and one pixel or an array of pixels in the laser irradiation area of CCD sensor is completely in failure. This paper could provide foundation for both laser-induced damage and protection of CCD image sensor.

Reference (12)

Catalog

    /

    返回文章
    返回