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Total ionizing dose effect of 0.18 m nMOSFETs

Liu Zhang-Li Hu Zhi-Yuan Zhang Zheng-Xuan Shao Hua Ning Bing-Xu Bi Da-Wei Chen Ming Zou Shi-Chang

Total ionizing dose effect of 0.18 m nMOSFETs

Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang
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  • Received Date:  13 December 2010
  • Accepted Date:  15 February 2011
  • Published Online:  15 November 2011

Total ionizing dose effect of 0.18 m nMOSFETs

  • 1. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
  • 2. Graduate University of the Chinese Academy of Sciences, Beijing 100039, China

Abstract: A 0.18 m MOSFET with shallow trench isolation is exposed to a -ray radiation. The parameters such as off-state leakage current, threshold voltage, transconductance, gate leakage current, and subthreshold slope are analyzed for pre- and post-irradiation. By introducing constant sheet charges at the shallow trench isolation oxide sidewall, good agreement between 3D simulation and experiment result is demonstrated. We believe that the thin gate oxide is insensitive to radiation, and the radiation induced charge trapping in the shallow trench isolation still leads to macroscopic effects such as drain-to-source leakage current, ultimately limiting the tolerance of CMOS circuits.

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