Total ionizing dose effect of 0.18 m nMOSFETs

Liu Zhang-Li; Hu Zhi-Yuan; Zhang Zheng-Xuan; Shao Hua; Ning Bing-Xu; Bi Da-Wei; Chen Ming; Zou Shi-Chang

doi:10.7498/aps.60.116103

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Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica, 2011, 60(11): 116103. DOI: 10.7498/aps.60.116103

Citation:

Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica, 2011, 60(11): 116103. DOI: 10.7498/aps.60.116103

Citation:

Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica, 2011, 60(11): 116103. DOI: 10.7498/aps.60.116103