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摘要: 对n／p两种沟道类型、不同沟道尺寸MOSFET的1／f噪声特性进行了实验和理论研究.实验结 果表明，虽然nMOSFET的1／f噪声幅值比pMOSFET大一个数量级，但是其噪声幅值均表现出和 有效栅压的平方成反比、和漏压的平方成正比、和沟道面积成反比的规律.基于该实验结果 ，认为MOSFET的1/f噪声产生机理为位于半导体_氧化物界面附近几个纳米范围内的氧化层陷 阱通过俘获和发射过程与沟道交换载流子，在引起载流子数涨落的同时也通过库仑散射导致 沟道载流子迁移率的涨落.在这两种涨落机理的基础上，引入了氧化层陷阱的分布特征及其 与沟道交换载流子的隧穿和热激活两种方式，建立了MOSFET l／f噪声的统一模型.实验结果 和本文模型符合良好.
Abstract: 1/f noise in n-channel and p-channel metal_oxide_semiconductor field effect tran sistors(MOSFETs) with different channel areas, are studied in theory and experim ent. Experimental results demonstrate that the 1/f noise magnitude in n-channel MOSFETs is ten times than that in p_channel MOSFETs, but both magnitudes are al l in inverse proportion to the power of effective gate voltage and its active ar ea, while they are in direct proportion to the power of drain voltage. Based on these experimental results, the mechanisms are discussed that the 1/f noise in M OSFETs is attributed to the random trapping/detrapping processes between channel and oxide traps near the SiO2_Si interface about several nanometers, which ca use fluctuations in both the number and the mobility of channel carriers. Based on these mechanisms, a unified 1/f noise model for MOSFETs is developed, includi ng tunneling and thermal activation through which traps communicate carriers wit h channel. Experimental results agree well with the developed model.
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