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Electrical and optical properties of Cu-Al-O thin films sputtered using non-stoichiometric target

Pan Jia-Qi Zhu Chen-Quan Li Yu-Ren Lan Wei Su Qing Liu Xue-Qin Xie Er-Qing

Electrical and optical properties of Cu-Al-O thin films sputtered using non-stoichiometric target

Pan Jia-Qi, Zhu Chen-Quan, Li Yu-Ren, Lan Wei, Su Qing, Liu Xue-Qin, Xie Er-Qing
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Publishing process
  • Received Date:  07 January 2011
  • Accepted Date:  26 January 2011
  • Published Online:  15 November 2011

Electrical and optical properties of Cu-Al-O thin films sputtered using non-stoichiometric target

  • 1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;
  • 2. Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China

Abstract: Taking account difference in sputtering rate between Cu and Al, we use a polycrystalline CuAlO2 target with a ratio between Cu and Al being 0.9 ∶1 to prepare the Cu-Al-O film by RF magnetron sputtering. The electrical and the optical properties of the thin film are influenced by the temperature of the substrate. When the substrate temperature is around 500 ℃, the film has a good transmission of 70% in the range of the visible light. Calculated by the fitted formula, the direct band gap is 3.52 eV,and it is in good agreement with the theoretical value. Near room temperature, the thin film conforms to the semiconductor thermal activation mechanism, when the substrate temperature is about 500 ℃, the film conductivity reaches 2.4810-3 Scm-1.

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