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Coulomb oscillations effect in dual gate controlled silicon nanowire

Zhang Xian-Gao Fang Zhong-Hui Chen Kun-Ji Qian Xin-Ye Liu Guang-Yuan Xu Jun Huang Xin-Fan He Fei

Coulomb oscillations effect in dual gate controlled silicon nanowire

Zhang Xian-Gao, Fang Zhong-Hui, Chen Kun-Ji, Qian Xin-Ye, Liu Guang-Yuan, Xu Jun, Huang Xin-Fan, He Fei
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  • Received Date:  28 April 2010
  • Accepted Date:  29 May 2010
  • Published Online:  15 February 2011

Coulomb oscillations effect in dual gate controlled silicon nanowire

  • 1. (1)State Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China; (2)Wuxi China Resources Huajing Micro Electronics Co. Ltd., Wuxi 214061, China

Abstract: The tunable single electron effect and Coulomb oscillations were observed in Si nanowire transistors. By measuring the channel current as function of applied back-gate and side-gate voltage, the tunable single electron effect and Coulomb oscillations are investigated. From the differential conductance characteristics, the Coulomb diamonds are clearly observed due to the gate voltage-induced quantum dots formation in the Si nanowire.

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