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Growths of InAs/GaAs and InAs/In x Ga1-x As/GaAs nanowire heterostructures

Ye Xian Huang Hui Ren Xiao-Min Guo Jing-Wei Huang Yong-Qing Wang Qi Zhang Xia

Growths of InAs/GaAs and InAs/In x Ga1-x As/GaAs nanowire heterostructures

Ye Xian, Huang Hui, Ren Xiao-Min, Guo Jing-Wei, Huang Yong-Qing, Wang Qi, Zhang Xia
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Publishing process
  • Received Date:  11 January 2010
  • Accepted Date:  12 October 2010
  • Published Online:  15 March 2011

Growths of InAs/GaAs and InAs/In x Ga1-x As/GaAs nanowire heterostructures

  • 1. Key Laboratory of Information Photonics and Optical Communications (Ministry of Education), Beijing University of Posts and Telecommunications, Beijing 100876, China

Abstract: InAs/GaAs and InAs/In xGa1-xAs/GaAs nanowire heterostructures are grown by metal organic chemical vapor deposition via Au-assistant vapor-liquid-solid mechanism. We find that the InAs nanowires grow directly on GaAs nanowires in a random way, or they grow along the sidewall of the GaAs nanowires, and thet InAs nanowires grow vertically on GaAs nanowires by using an In x Ga1-xAs (0≤x≤1) buffer segment. It can be concluded that the influences of crystal lattice mismatch and difference in interfacial energy can be eliminated by inserting a ternary compound semiconductor buffer segment, thereby improving the crystal quality and the capability to control the growth of nanowire heterostructure.

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