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Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures

Kang Chao-Yang Tang Jun Li Li-Min Pan Hai-Bin Yan Wen-Sheng Xu Peng-Shou Wei Shi-Qiang Chen Xiu-Fang Xu Xian-Gang

Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures

Kang Chao-Yang, Tang Jun, Li Li-Min, Pan Hai-Bin, Yan Wen-Sheng, Xu Peng-Shou, Wei Shi-Qiang, Chen Xiu-Fang, Xu Xian-Gang
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  • The epitaxial graphene (EG) layers are grown on Si-terminated 6H-SiC (0001) substrates and C-terminated 6H-SiC (000 1 - ) substrates separately by thermal annealing in an ultrahigh vacuum chamber. Low energy electron diffraction(LEED) and synchrotron radiation photoelectron spectroscopy(SRPES) are used to in-situ study the synthesis process, and the prepared samples are characterized by Raman spectrum, and near edge X-ray absorption fine structure(XANEX). The results show that we have successfully prepared high-quality EG layers on the two polar surfaces of 6H-SiC. The comparisons studies indicate that Si terminated EG is highly oriented while C terminated EG is anisotropic, and that the interface interaction similar to that of C-sp3 bond of diamond exists on the Si terminated EG, the interaction between the epitaxial film and substrate is stronger, while on the C terminated EG there is no such interaction, and the interaction between the epitaxial film and substrate is weaker.
    • Funds:
    [1]

    Novoselov K S, Geim A K, Firsov A A 2004 Science 306 666

    [2]

    Novoselov K S, Jiang Z, Zhang Y, Morozov S V, Stormer H L, Zeitler U, Maan J C, Boebinger G S, Kim P, Geim A K 2007 Science 315 1379

    [3]

    Service R F 2009 Science 324 875

    [4]

    Balandin A A, Ghosh S, Bao W Z, Calizo I, Teweldebrhan D, Miao F, Lau C N 2008 Nano Lett. 8 902

    [5]

    Lee C G, Wei X D, Kysar J W, Hone J 2008 Science 2008 321 385

    [6]

    Wang Y, Huang Y, Song Y, Zhang X Y, Ma Y F, Liang J J, Chen Y S 2009 Nano. Lett. 9 220

    [7]

    Sun J T, Du S X, Xiao W D, Hu H, Zhang Y Y, Li G, Gao H J 2009 Chin. Phys. B 18 3008

    [8]

    Stankovich S, Dikin D A, Dommett G H B, Kohlhaas K M, Zimney E J, Stach E A, Piner R D, Nguyen S T, Ruoff R S 2006 Nature 442 282

    [9]

    Di C A, Wei D C, Yu G, Liu Y Q, Guo Y L, Zhu D B 2008 Adv Mater 20 3289

    [10]

    Wu J S, Pisula W, Mullen K 2007 Chem. Rev. 107 718

    [11]

    Berger, C, Song Z, Li T, Li X, Ogbazghi A Y, Feng R, Dai Z, Marchenkov A N, Conrad E H, First P N, de Heer, W 2004 The Journal of Physi. Chem. B 108 19912

    [12]

    B erger C, Song Z, L i X, Wu X, Brown N, Naud C, Mayou D, Li T, Hass J, Marchenkov A N, Conrad E H, First P N, de Heer, W 2006 Science 312 1191

    [13]

    Tang J, Liu Z L, Kang C Y, Pan H B, Wei S Q, Xu P S, Gao Y Q, Xu X G 2009 Chin. Phys. Lett. 26 08814

    [14]

    Park C H, Cheong B Ch, Lee K H, Chang K J. 1994 Phys. Rev. B 49 4485

    [15]

    Jernigan G G, VanMil B L, Tedesco J L, Tischler J G, Glaser E R, Anthony Davidson Ⅲ, Campbell P M, Kurt Gaskill D 2009 Nano Letters 9 2605

    [16]

    Xu X G, Hu X B, Wang J Y, Jiang M H 2003 Journal of Synthetic Crystals 32 540 (in chinese) [徐现刚、 胡小波、 王继扬、 蒋民华 2003 人工晶体学报 32 540 Mizokawa Y, Miyasato T, Nakamura S, Geib K M, Wilmsen C W, 1987 J. Vac. Sci. Technol. 5 2809 〖18] Peneluas J, Ouerghi A, Lucot D, David C, Gierak J, Estrade-Szwarckopf H, Andreazza-Vignolle C 2009 Phys. Rev. B 79 033408

    [17]

    Ni Z H, Chen W, Fan X F, Kuo J L, Yu T, wee A S T, Shen Z X 2008 Phys. Rev. B 77 115416

    [18]

    Thomsen C, Reich S 2000 Phys. Rev. L 85 5214

    [19]

    Chen D M 2010 Acta Phys. Sin. 59 6399 (in Chinese) [陈东猛 物理学报 2010 59 6399]

    [20]

    Wei Yong, Tong G P 2010 Acta Phys. Sin. 59 372 (in Chinese) [韦 勇、 童国平 2010 物理学报 59 372]

    [21]

    Röhrl J, Hundhausen M, Emtsev K V, Seyller Th, Graupner R, Ley L 2008 Appl. Phys. Lett. 92 01918

    [22]

    Ferralis N, Maboudian R, Carraro C 2008 Phys. Rev. Lett. 101 156801

    [23]

    Ferrari A C, Meyer J C, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, Piscanec S, Jiang D, Novoselov K S, Roth S, Geim A K 2006 Phys. Rev. Lett. 97 187401

    [24]

    Tang J, Liu Z L, Ren P, Yao T, Yan W S, Xu P S ,Wei S Q 2010 Acta Phys. Sin. 59 372 ( in Chinese) [唐 军、 刘忠良、 任 鹏、 姚 涛、 闫文盛、 徐彭寿、 韦世强 2010 物理学报 59 372]

    [25]

    Batson P E 1993 Phys. Rev. B 48 2608

    [26]

    Abbas M, Wu Z Y, Zhong J, Ibrahim K, Fiori A, Orlanducci S 2005 Appl. Phys. Lett. 87 051923

  • [1]

    Novoselov K S, Geim A K, Firsov A A 2004 Science 306 666

    [2]

    Novoselov K S, Jiang Z, Zhang Y, Morozov S V, Stormer H L, Zeitler U, Maan J C, Boebinger G S, Kim P, Geim A K 2007 Science 315 1379

    [3]

    Service R F 2009 Science 324 875

    [4]

    Balandin A A, Ghosh S, Bao W Z, Calizo I, Teweldebrhan D, Miao F, Lau C N 2008 Nano Lett. 8 902

    [5]

    Lee C G, Wei X D, Kysar J W, Hone J 2008 Science 2008 321 385

    [6]

    Wang Y, Huang Y, Song Y, Zhang X Y, Ma Y F, Liang J J, Chen Y S 2009 Nano. Lett. 9 220

    [7]

    Sun J T, Du S X, Xiao W D, Hu H, Zhang Y Y, Li G, Gao H J 2009 Chin. Phys. B 18 3008

    [8]

    Stankovich S, Dikin D A, Dommett G H B, Kohlhaas K M, Zimney E J, Stach E A, Piner R D, Nguyen S T, Ruoff R S 2006 Nature 442 282

    [9]

    Di C A, Wei D C, Yu G, Liu Y Q, Guo Y L, Zhu D B 2008 Adv Mater 20 3289

    [10]

    Wu J S, Pisula W, Mullen K 2007 Chem. Rev. 107 718

    [11]

    Berger, C, Song Z, Li T, Li X, Ogbazghi A Y, Feng R, Dai Z, Marchenkov A N, Conrad E H, First P N, de Heer, W 2004 The Journal of Physi. Chem. B 108 19912

    [12]

    B erger C, Song Z, L i X, Wu X, Brown N, Naud C, Mayou D, Li T, Hass J, Marchenkov A N, Conrad E H, First P N, de Heer, W 2006 Science 312 1191

    [13]

    Tang J, Liu Z L, Kang C Y, Pan H B, Wei S Q, Xu P S, Gao Y Q, Xu X G 2009 Chin. Phys. Lett. 26 08814

    [14]

    Park C H, Cheong B Ch, Lee K H, Chang K J. 1994 Phys. Rev. B 49 4485

    [15]

    Jernigan G G, VanMil B L, Tedesco J L, Tischler J G, Glaser E R, Anthony Davidson Ⅲ, Campbell P M, Kurt Gaskill D 2009 Nano Letters 9 2605

    [16]

    Xu X G, Hu X B, Wang J Y, Jiang M H 2003 Journal of Synthetic Crystals 32 540 (in chinese) [徐现刚、 胡小波、 王继扬、 蒋民华 2003 人工晶体学报 32 540 Mizokawa Y, Miyasato T, Nakamura S, Geib K M, Wilmsen C W, 1987 J. Vac. Sci. Technol. 5 2809 〖18] Peneluas J, Ouerghi A, Lucot D, David C, Gierak J, Estrade-Szwarckopf H, Andreazza-Vignolle C 2009 Phys. Rev. B 79 033408

    [17]

    Ni Z H, Chen W, Fan X F, Kuo J L, Yu T, wee A S T, Shen Z X 2008 Phys. Rev. B 77 115416

    [18]

    Thomsen C, Reich S 2000 Phys. Rev. L 85 5214

    [19]

    Chen D M 2010 Acta Phys. Sin. 59 6399 (in Chinese) [陈东猛 物理学报 2010 59 6399]

    [20]

    Wei Yong, Tong G P 2010 Acta Phys. Sin. 59 372 (in Chinese) [韦 勇、 童国平 2010 物理学报 59 372]

    [21]

    Röhrl J, Hundhausen M, Emtsev K V, Seyller Th, Graupner R, Ley L 2008 Appl. Phys. Lett. 92 01918

    [22]

    Ferralis N, Maboudian R, Carraro C 2008 Phys. Rev. Lett. 101 156801

    [23]

    Ferrari A C, Meyer J C, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, Piscanec S, Jiang D, Novoselov K S, Roth S, Geim A K 2006 Phys. Rev. Lett. 97 187401

    [24]

    Tang J, Liu Z L, Ren P, Yao T, Yan W S, Xu P S ,Wei S Q 2010 Acta Phys. Sin. 59 372 ( in Chinese) [唐 军、 刘忠良、 任 鹏、 姚 涛、 闫文盛、 徐彭寿、 韦世强 2010 物理学报 59 372]

    [25]

    Batson P E 1993 Phys. Rev. B 48 2608

    [26]

    Abbas M, Wu Z Y, Zhong J, Ibrahim K, Fiori A, Orlanducci S 2005 Appl. Phys. Lett. 87 051923

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  • Received Date:  09 October 2010
  • Accepted Date:  11 November 2010
  • Published Online:  15 April 2011

Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures

  • 1. (1)National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029,China; (2)State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Abstract: The epitaxial graphene (EG) layers are grown on Si-terminated 6H-SiC (0001) substrates and C-terminated 6H-SiC (000 1 - ) substrates separately by thermal annealing in an ultrahigh vacuum chamber. Low energy electron diffraction(LEED) and synchrotron radiation photoelectron spectroscopy(SRPES) are used to in-situ study the synthesis process, and the prepared samples are characterized by Raman spectrum, and near edge X-ray absorption fine structure(XANEX). The results show that we have successfully prepared high-quality EG layers on the two polar surfaces of 6H-SiC. The comparisons studies indicate that Si terminated EG is highly oriented while C terminated EG is anisotropic, and that the interface interaction similar to that of C-sp3 bond of diamond exists on the Si terminated EG, the interaction between the epitaxial film and substrate is stronger, while on the C terminated EG there is no such interaction, and the interaction between the epitaxial film and substrate is weaker.

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