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Influence of tensile stress on the phase formation and electronicproperties of Pb(Zr,Ti)O3 film at morphotropic phase boundary

Wen Xin-Yi Wang Yun-Bo Zhou Wen-Li Gao Jun-Xiong Yu Jun

Influence of tensile stress on the phase formation and electronicproperties of Pb(Zr,Ti)O3 film at morphotropic phase boundary

Wen Xin-Yi, Wang Yun-Bo, Zhou Wen-Li, Gao Jun-Xiong, Yu Jun
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  • Pb(Zr0.52,Ti0.48)Nb0.04O3 (Nb-doped PZT, PZTN) films are deposited on Pt/TiOx/SiO2/Si substrates with BaPbO3(BPO) buffer layers by RF-magnetron sputtering method. The magnitudes of tensile stress in PZTN films can be changed by adjusting the thickness of BPO layer. For PZTN films with 68 nm and 135 nm-BPOs, the tensile stresses measured by 2θ-sin2ψ method are 0.786 and 0.92 GPa respectively. Enhanced ferroelectric is observed in PZTN film with raised tensile stress. The remanent polarization and the coercive field for PZTN films with tensile stresses of 0.786 GPa and 0.92 GPa are 41.2μC/cm2(70.7 kV/cm) and 44.1μC/cm2(58.1 kV/cm) respectively. The leakage current decreases from 6.57×10-7A/cm-2 to 5.54×10-8A/cm-2 while tensile stress of PZTN film is raised from 0.786 to 0.92GPa. Fine XRD scan is performed with grazing incidence geometry to investigate the phase composition of PZTN films. Rietveld analysis shows that an increased tensile stress in PZTN film can promote the amount of monoclinic phase,which may be the reason for the ferroelectric property improvement.
    • Funds:
    [1]

    Zhang Q, Whatmore R W 2004 Mat. Sci. Eng. B-Solid 109 136

    [2]

    Aggarwal S, Jenkins I G, Nagaraj B, Kerr C J, Canedy C, Ramesh R, Velasquez G, Boyer L, Evans J T 1999 Appl. Phys. Lett. 75 1787

    [3]

    Jaffe B, Cook W R, Jaffe H 1971 Piezoelectric Ceramics (London: Academic Press)

    [4]

    Gavrilyachenko V, Spinko R, Martynenko M, Fesenko E 1970 Sov. Phys. Solid. State 12 1203

    [5]

    Yan L, Li J, Cao H, Viehland D 2006 Appl. Phys. Lett. 89 262905

    [6]

    Noheda B, Cox D E, Shirane G 1999 Appl. Phys. Lett. 74 2059

    [7]

    Singh A K, Pandeya D, Yoon S, Baik S, Shin N 2007 Appl. Phys. Lett. 91 192904

    [8]

    Zhou Z D, Zhang C Z, Zhang Y 2010 Acta Phys. Sin. 59 6620 (in Chinese)[周志东、张春祖、张 颖 2010 物理学报 59 6620]

    [9]

    Lu Y G, Lin L X, Gong Y Q, Zheng X J, Liu Z Z 2010 Acta Phys. Sin. 59 8167 (in Chinese)[吕业刚、梁晓琳、龚跃球、郑学军、刘志壮 2010 物理学报 59 8167]

    [10]

    Pertsev N A, Kukhar V G, Kohlstedt H, Waser R 2003 Phys. Rev. B 67 054107

    [11]

    Pertsev N A, Zembilgotov A G, Tagantsev A K 1998 Phys. Rev. Lett. 80 1988

    [12]

    Huang N, Liu Z, WuZ Q, Wu J, Duan W 2003 Phy. Rev. Lett. 91 067602

    [13]

    Ahart M, Somayazulu M, Cohen R E, Ganesh P, Dera P, Mao H K, Hemley R J, Ren Y, Liermann P, Wu Z 2008 Nature 545 545

    [14]

    Wasa K, Haber M, Adachi H 2005 Thin Film Materials Technology: Sputtering of Compound Materials (New York: William Andrew)

    [15]

    Ranjan R R, Mishra S K, Pandey D 2002 J. Appl. Phys. 92 3266

    [16]

    Williamson G K, Hall W H 1953 Acta Metallurgica 1 22

    [17]

    Kakegawa K, Mohri J, Takahashi T, Yamamura H, Shirasaki S 1977 Solid State Commun. 24 769

    [18]

    Xu K W, Gao R S, Yu L G, He J W 1994 Acta Phys. Sin. 43 1295 (in Chinese)[徐可为、高润生、于利根、何家文 1994 物理学报 43 1295]

    [19]

    Kong D J, Zhang Y K, Chen Z G, Lu J Z, Feng A X, Ren X D, Ge T 2007 Acta Phys. Sin. 56 4056 (in Chinese)[孔德军、张永康、陈志刚、鲁金忠、冯爱新、任旭东、葛 涛 2007 物理学报 56 4056]

    [20]

    Zhou Y C, Yang Z Y, Zheng X J 2003 Surface and Coatings Technology 162 202

    [21]

    Thielsch R, Hassler W, Bruckner W 1996 Phys. Stat. Sol. A 156 199

    [22]

    Zheng X J, Zhou Y C, Li J 2003 J. Acta Mater 51 3985

    [23]

    Yu L, Sun H, Xu K, He J 1994 Journal of Applied Crystallography 27 863

    [24]

    Lee J W, Park C S, Kim M, Kim H E 2007 Journal of the American Ceramic Society 90 1077

    [25]

    Lee J W, Park G T, Park C S, Kim H E 2006 Appl. Phys. Lett. 88 072908

    [26]

    Liu W G, Kong L B, Zhang L Y, Yao X 1996 Acta Phys. Sin. 45 318 (in Chinese)[刘卫国、孔令兵、张良莹、姚 熹 1994 物理学报 45 318]

    [27]

    Araújo E B, Lima E C, Guerra J D S, Santos A O d, Cardoso L P, Kleinke M U 2008 J. Phys.: Condens. Matter 20 415203

    [28]

    PANalytical B V 2003 X' Per HighScore Plus Help System (Netherlands: PANalytical B. V.)

    [29]

    Yogaraksa T, Hikama M 2004 Irzaman Ceramics International 30 1483

    [30]

    Edwards J W, Speiser R, Johnston H L 1951 J. Appl. Phys. 22 424

    [31]

    Gross R, Kwok W K, Maroni V A, Moshchalkov V V, Obradors X, Tajima S, Tohyama T, Wen H H 1992 Physica C: Superconductivity and its Applications 202 379

    [32]

    Yan L, Li J, Cao H, Viehland D 2006 Appl. Phys. Lett. 89 262905

  • [1]

    Zhang Q, Whatmore R W 2004 Mat. Sci. Eng. B-Solid 109 136

    [2]

    Aggarwal S, Jenkins I G, Nagaraj B, Kerr C J, Canedy C, Ramesh R, Velasquez G, Boyer L, Evans J T 1999 Appl. Phys. Lett. 75 1787

    [3]

    Jaffe B, Cook W R, Jaffe H 1971 Piezoelectric Ceramics (London: Academic Press)

    [4]

    Gavrilyachenko V, Spinko R, Martynenko M, Fesenko E 1970 Sov. Phys. Solid. State 12 1203

    [5]

    Yan L, Li J, Cao H, Viehland D 2006 Appl. Phys. Lett. 89 262905

    [6]

    Noheda B, Cox D E, Shirane G 1999 Appl. Phys. Lett. 74 2059

    [7]

    Singh A K, Pandeya D, Yoon S, Baik S, Shin N 2007 Appl. Phys. Lett. 91 192904

    [8]

    Zhou Z D, Zhang C Z, Zhang Y 2010 Acta Phys. Sin. 59 6620 (in Chinese)[周志东、张春祖、张 颖 2010 物理学报 59 6620]

    [9]

    Lu Y G, Lin L X, Gong Y Q, Zheng X J, Liu Z Z 2010 Acta Phys. Sin. 59 8167 (in Chinese)[吕业刚、梁晓琳、龚跃球、郑学军、刘志壮 2010 物理学报 59 8167]

    [10]

    Pertsev N A, Kukhar V G, Kohlstedt H, Waser R 2003 Phys. Rev. B 67 054107

    [11]

    Pertsev N A, Zembilgotov A G, Tagantsev A K 1998 Phys. Rev. Lett. 80 1988

    [12]

    Huang N, Liu Z, WuZ Q, Wu J, Duan W 2003 Phy. Rev. Lett. 91 067602

    [13]

    Ahart M, Somayazulu M, Cohen R E, Ganesh P, Dera P, Mao H K, Hemley R J, Ren Y, Liermann P, Wu Z 2008 Nature 545 545

    [14]

    Wasa K, Haber M, Adachi H 2005 Thin Film Materials Technology: Sputtering of Compound Materials (New York: William Andrew)

    [15]

    Ranjan R R, Mishra S K, Pandey D 2002 J. Appl. Phys. 92 3266

    [16]

    Williamson G K, Hall W H 1953 Acta Metallurgica 1 22

    [17]

    Kakegawa K, Mohri J, Takahashi T, Yamamura H, Shirasaki S 1977 Solid State Commun. 24 769

    [18]

    Xu K W, Gao R S, Yu L G, He J W 1994 Acta Phys. Sin. 43 1295 (in Chinese)[徐可为、高润生、于利根、何家文 1994 物理学报 43 1295]

    [19]

    Kong D J, Zhang Y K, Chen Z G, Lu J Z, Feng A X, Ren X D, Ge T 2007 Acta Phys. Sin. 56 4056 (in Chinese)[孔德军、张永康、陈志刚、鲁金忠、冯爱新、任旭东、葛 涛 2007 物理学报 56 4056]

    [20]

    Zhou Y C, Yang Z Y, Zheng X J 2003 Surface and Coatings Technology 162 202

    [21]

    Thielsch R, Hassler W, Bruckner W 1996 Phys. Stat. Sol. A 156 199

    [22]

    Zheng X J, Zhou Y C, Li J 2003 J. Acta Mater 51 3985

    [23]

    Yu L, Sun H, Xu K, He J 1994 Journal of Applied Crystallography 27 863

    [24]

    Lee J W, Park C S, Kim M, Kim H E 2007 Journal of the American Ceramic Society 90 1077

    [25]

    Lee J W, Park G T, Park C S, Kim H E 2006 Appl. Phys. Lett. 88 072908

    [26]

    Liu W G, Kong L B, Zhang L Y, Yao X 1996 Acta Phys. Sin. 45 318 (in Chinese)[刘卫国、孔令兵、张良莹、姚 熹 1994 物理学报 45 318]

    [27]

    Araújo E B, Lima E C, Guerra J D S, Santos A O d, Cardoso L P, Kleinke M U 2008 J. Phys.: Condens. Matter 20 415203

    [28]

    PANalytical B V 2003 X' Per HighScore Plus Help System (Netherlands: PANalytical B. V.)

    [29]

    Yogaraksa T, Hikama M 2004 Irzaman Ceramics International 30 1483

    [30]

    Edwards J W, Speiser R, Johnston H L 1951 J. Appl. Phys. 22 424

    [31]

    Gross R, Kwok W K, Maroni V A, Moshchalkov V V, Obradors X, Tajima S, Tohyama T, Wen H H 1992 Physica C: Superconductivity and its Applications 202 379

    [32]

    Yan L, Li J, Cao H, Viehland D 2006 Appl. Phys. Lett. 89 262905

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  • Received Date:  30 March 2011
  • Accepted Date:  28 April 2011
  • Published Online:  15 September 2011

Influence of tensile stress on the phase formation and electronicproperties of Pb(Zr,Ti)O3 film at morphotropic phase boundary

  • 1. Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China

Abstract: Pb(Zr0.52,Ti0.48)Nb0.04O3 (Nb-doped PZT, PZTN) films are deposited on Pt/TiOx/SiO2/Si substrates with BaPbO3(BPO) buffer layers by RF-magnetron sputtering method. The magnitudes of tensile stress in PZTN films can be changed by adjusting the thickness of BPO layer. For PZTN films with 68 nm and 135 nm-BPOs, the tensile stresses measured by 2θ-sin2ψ method are 0.786 and 0.92 GPa respectively. Enhanced ferroelectric is observed in PZTN film with raised tensile stress. The remanent polarization and the coercive field for PZTN films with tensile stresses of 0.786 GPa and 0.92 GPa are 41.2μC/cm2(70.7 kV/cm) and 44.1μC/cm2(58.1 kV/cm) respectively. The leakage current decreases from 6.57×10-7A/cm-2 to 5.54×10-8A/cm-2 while tensile stress of PZTN film is raised from 0.786 to 0.92GPa. Fine XRD scan is performed with grazing incidence geometry to investigate the phase composition of PZTN films. Rietveld analysis shows that an increased tensile stress in PZTN film can promote the amount of monoclinic phase,which may be the reason for the ferroelectric property improvement.

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