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Enlargement of current spin polarization in organic spintronic device

Dou Zhao-Tao Ren Jun-Feng Wang Yu-Mei Yuan Xiao-Bo Hu Gui-Chao

Enlargement of current spin polarization in organic spintronic device

Dou Zhao-Tao, Ren Jun-Feng, Wang Yu-Mei, Yuan Xiao-Bo, Hu Gui-Chao
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  • Using the spin diffusion-drift equation and considering the effects of the electric fields and the special carriers in organic semiconductors, the enlargement ratio of current spin polarization in a simple T-shaped organic spintronic device is theoretically studied. It is found that the significant enlargement ratio of the current spin polarization can be acquired by adjusting the electric field and the polaron ratio in organic semiconductor.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 10904083, 10904084), the Distinguished Middle-Aged and Young Scientist Encourage and Reward Foundation of Shandong Province, China (Grant No. BS2009CL008), and the Science and Technology Reward Program of Institution of Higher Education of Shandong Province, China (Grant No. J09LA03).
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    Drew A J, Hoppler J, Schulz L, Pratt F L, Desai P, Shakya P, Kreouzis T, Gillin W P, Suter A, Morley N A, Malik V K, Dubroka A, Kim K W, Bouyanfif H, Bourqui F, Bernhard C, Scheuemann R, Nieuwenhuys G J, Prokscha T, Morenzoni E 2009 Nature 8 109

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    Yu Z G, Berding M A, Krishnamurthy S 2005 Phys. Rev. B 71 060408

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    Yunus M, Ruden P P, Smith D L 2008 J. Appl. Phys. 103 103714

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    Ren J F, Fu J Y, Liu D S, Mei L M, Xie S J 2005 J. Appl. Phys. 98 074503

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    Mi Y L, Zhang M, Yan H 2008 Phys. Lett. A 372 6434

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    Jung S W, Lee H W 2006 Phys. Rev. B 73 165302

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    Yu Z G, Flatt M E 2002 Phys. Rev. B 66 201202(R)

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    Yu Z G, Flatt M E 2002 Phys. Rev. B 66 235302

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    Aronov A G, Pikus G E 1976 Fiz. Tekh. Poluprovodn. 10 1177

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    Ren J F, Zhang Y B, Xie S J 2008 Org. Electron. 9 1017

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  • [1]

    Baibich M N, Broto J M, Fert A, Nguyen F D V, Petroff F, Etienne P, Creuzet G, Friederich A, Chazelas J 1988 Phys. Rev. Lett. 61 2472

    [2]
    [3]

    Barnas J, Fuss A, Camley R E, Grnberg P, Zinn W 1990 Phys. Rev. B 42 8110

    [4]
    [5]

    Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnr S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488

    [6]
    [7]

    Friend R H, Gymer R W, Holmes A B, Burroughes J H, Marks R N, Taliani C, Bradley D D C, Dos Santos D A, Brdas J L, Lgdlund M, Salaneck W R 1999 Nature 397 121

    [8]
    [9]

    Forrest S, Burrows P, Thompson M 2000 IEEE Spectr. 37 29

    [10]
    [11]
    [12]

    Chen H M, Jin B S 2010 Micronanoelectron. Technol. 47 470 (in Chinese) [陈海明, 靳宝善 2010 微纳电子技术 47 470]

    [13]

    Wang L X, Zhang D C, Liu D S, Han S H, Xie S J 2003 Acta Phys. Sin. 52 2547 (in Chinese) [王鹿霞, 张大成, 刘德胜, 韩圣浩, 解士杰 2003 物理学报 52 2547]

    [14]
    [15]

    Wang L X, Liu D S, Xie S J 2002 Acta Phys. Sin. 51 362 (in Chinese) [王鹿霞, 刘德胜, 解士杰 2002 物理学报 51 362]

    [16]
    [17]

    Fu J Y, Ren J F, Liu D S, Xie S J 2004 Acta Phys. Sin. 53 1989 (in Chinese) [付吉永, 任俊峰, 刘德胜, 解士杰 2004 物理学报 53 1989]

    [18]
    [19]

    Naber W J M, Faez S, Gvander Wie W 2007 J. Phys. D 40 R205

    [20]
    [21]

    Dediu V, Murgia M, Matacotta F C, Taliani C, Barbanera S 2002 Solid State Commun. 122 181

    [22]
    [23]
    [24]

    Xiong Z H, Wu D, Vardeny Z V, Shi J 2004 Nature 427 821

    [25]

    Majumdar S, Laiho R, Laukkanen P, Vyrynen I J, Majumdar H S, sterbacka R 2006 Appl. Phys. Lett. 89 122114

    [26]
    [27]
    [28]

    Drew A J, Hoppler J, Schulz L, Pratt F L, Desai P, Shakya P, Kreouzis T, Gillin W P, Suter A, Morley N A, Malik V K, Dubroka A, Kim K W, Bouyanfif H, Bourqui F, Bernhard C, Scheuemann R, Nieuwenhuys G J, Prokscha T, Morenzoni E 2009 Nature 8 109

    [29]
    [30]

    Li C H, van 't Erve O M J, Jonker B T 2011 Nat. Commun. 2 245

    [31]
    [32]

    Xie S J, Ahn K H, Smith D L, Bishop A R, Saxena A 2003 Phys. Rev. B 67 125202

    [33]

    Fu J Y, Ren J F, Liu X J, Xie S J 2006 Phys. Rev. B 73 195401

    [34]
    [35]

    Ruden P P, Smith D L 2004 J. Appl. Phys. 95 4898

    [36]
    [37]

    Yu Z G, Berding M A, Krishnamurthy S 2005 J. Appl. Phys. 97 024510

    [38]
    [39]

    Yu Z G, Berding M A, Krishnamurthy S 2005 Phys. Rev. B 71 060408

    [40]
    [41]

    Yunus M, Ruden P P, Smith D L 2008 J. Appl. Phys. 103 103714

    [42]
    [43]
    [44]

    Ren J F, Fu J Y, Liu D S, Mei L M, Xie S J 2005 J. Appl. Phys. 98 074503

    [45]
    [46]

    Mi Y L, Zhang M, Yan H 2008 Phys. Lett. A 372 6434

    [47]
    [48]

    Jung S W, Lee H W 2006 Phys. Rev. B 73 165302

    [49]

    Yu Z G, Flatt M E 2002 Phys. Rev. B 66 201202(R)

    [50]
    [51]

    Yu Z G, Flatt M E 2002 Phys. Rev. B 66 235302

    [52]
    [53]
    [54]

    Aronov A G, Pikus G E 1976 Fiz. Tekh. Poluprovodn. 10 1177

    [55]

    Ren J F, Zhang Y B, Xie S J 2008 Org. Electron. 9 1017

    [56]
    [57]

    Xiu M X, Ren J F, Wang Y M 2010 J. At. Mol. Phys. 27 353

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  • Received Date:  10 July 2011
  • Accepted Date:  28 April 2012
  • Published Online:  20 April 2012

Enlargement of current spin polarization in organic spintronic device

  • 1. College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 10904083, 10904084), the Distinguished Middle-Aged and Young Scientist Encourage and Reward Foundation of Shandong Province, China (Grant No. BS2009CL008), and the Science and Technology Reward Program of Institution of Higher Education of Shandong Province, China (Grant No. J09LA03).

Abstract: Using the spin diffusion-drift equation and considering the effects of the electric fields and the special carriers in organic semiconductors, the enlargement ratio of current spin polarization in a simple T-shaped organic spintronic device is theoretically studied. It is found that the significant enlargement ratio of the current spin polarization can be acquired by adjusting the electric field and the polaron ratio in organic semiconductor.

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