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Simulation and design of a W-band extended interaction klystron amplifier

Wu Yang Xu Zhou Zhou Lin Li Wen-Jun Tang Chuan-Xiang

Simulation and design of a W-band extended interaction klystron amplifier

Wu Yang, Xu Zhou, Zhou Lin, Li Wen-Jun, Tang Chuan-Xiang
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  • Abstract views:  4130
  • PDF Downloads:  668
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Publishing process
  • Received Date:  21 May 2012
  • Accepted Date:  14 June 2012
  • Published Online:  05 November 2012

Simulation and design of a W-band extended interaction klystron amplifier

  • 1. Department of Engineering Physics, Tsinghua University, Beijing 100084, China;
  • 2. Institute of Applied Electronics, CAEP, Mianyang 621900, China;
  • 3. Science and Technology on High Power Microwave Laboratory, Mianyang 621900, China

Abstract: Extended interaction klystron amplifier is a very important high power millimeter wave source with many actual and potential applications. Based on the electromagnetic simulation software and 3D PIC code, a W-band extended interaction klystron amplifier is designed. In the PIC simulation, when the beam voltage is 30 kV and current is 8 A, the device can generate a 43 kW output power at 96.8 GHz with an efficiency of 18% and a gain of 49.3 dB.

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