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Investigation on the relationship between the properties of atomic layer deposition ZnO film and the dose of precursor

Dong Ya-Bin Xia Yang Li Chao-Bo Lu Wei-Er Rao Zhi-Peng Zhang Yang Zhang Xiang Ye Tian-Chun

Investigation on the relationship between the properties of atomic layer deposition ZnO film and the dose of precursor

Dong Ya-Bin, Xia Yang, Li Chao-Bo, Lu Wei-Er, Rao Zhi-Peng, Zhang Yang, Zhang Xiang, Ye Tian-Chun
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  • Received Date:  24 January 2013
  • Accepted Date:  01 April 2013
  • Published Online:  05 July 2013

Investigation on the relationship between the properties of atomic layer deposition ZnO film and the dose of precursor

  • 1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Fund Project:  Project supported by the National Science and Technology Major Project of China (Grant No. 2009ZX02037-003).

Abstract: In this paper, we present the properties of new type of material ZnO and the ZnO films prepared on sapphire substrate through atomic layer deposition (ALD). In experiment, we use N2 as the carrier, DEZn and DI-water as the precursors. The deposition temperature is 180℃. The value of Zn/O could be modified through changing the dose of DEZn. Furthermore, we investigate the influences of Zn/O value on the thickness, growth rate, crystalline property, surface morphology, three-dimensional structure and roughness of the ZnO film prepared by the ALD method.

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