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The fabrication of the antireflective periodic nano-arrary structure on Si surface using nanoimprint lithography and the study on its properties

Zhang Zheng Xu Zhi-Mou Sun Tang-You He Jian Xu Hai-Feng Zhang Xue-Ming Liu Shi-Yuan

The fabrication of the antireflective periodic nano-arrary structure on Si surface using nanoimprint lithography and the study on its properties

Zhang Zheng, Xu Zhi-Mou, Sun Tang-You, He Jian, Xu Hai-Feng, Zhang Xue-Ming, Liu Shi-Yuan
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  • Received Date:  27 March 2013
  • Accepted Date:  02 May 2013
  • Published Online:  20 August 2013

The fabrication of the antireflective periodic nano-arrary structure on Si surface using nanoimprint lithography and the study on its properties

  • 1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
  • 2. State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 61076042, 60607006), the Special Project on Development of National Key Scientific Instruments and Equipment of China (Grant No. 2011YQ16000205), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A106).

Abstract: The intrinsic Fresnel reflection of Si surface, which causes more than 30% of the incident light to be reflected back from the surface, seriously influences the photoelectric conversion efficiency of Si-based semiconductor photoelectric device, such as solar cell and infrared detector. Recently, how to find a simple and efficient method, which is also suitable for mass production, aiming to suppress the undesired reflectivity and therefore improving the efficiency of the device, has become a research focus. In this work, we successfully convert a 2D nanopillar array structure into the Si surface via the nanoimprint lithography. The nanopillar has a flat surface and a paraboloid-like side wall profile. The period and the height of the hexagonal array structure are 530 nm and 240 nm, respectively. The cut-paraboloid nanopillar structure generates a relatively smooth gradient of the refractive index in the optical interface, which plays a key role in suppressing the Fresnel reflection in a wide range of wavelength. The reflectivity of the nanopillar arrayed Si surface is tested in a wavelength range from 400 to 2500 nm at an incident angle of 8° during the measurement. Compared with the unstructured Si, the structured Si has a reflectivity that significantly decreases in the test area: in a wavelength range from 400 to 1200 nm, and the reflectivity of the silicon surface is less than 10%. Specifically, the reflectivity is almost zero at a wavelength of about 1360 nm. The results are confirmed with the effective medium and rigorous coupled-wave theory.

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