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Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates

Sun Ya-Bin Fu Jun Xu Jun Wang Yu-Dong Zhou Wei Zhang Wei Cui Jie Li Gao-Qing Liu Zhi-Hong

Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates

Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong
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Publishing process
  • Received Date:  24 May 2013
  • Accepted Date:  03 July 2013
  • Published Online:  05 October 2013

Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates

  • 1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
  • 2. Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 60976013).

Abstract: Ionizing radiation effects in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) at different dose rates were investigated. Experimental results show that the base current increases with increasing accumulated dose for the high and low dose rates of irradiation, causing a significant drop in current gain. Besides, the lower the dose rate, the higher the radiation damage, which demonstrates a significantly enhanced low-date-rate sensitivity (ELDRS) effect in the SiGe HBTs. The different degradation behaviors for high and low dose rates of irradiation are compared with each other and discussed; furthermore, the underlying physical mechanisms are analyzed and investigated in detail.

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