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Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

Liu Bo-Fei Bai Li-Sha Wei Chang-Chun Sun Jian Hou Guo-Fu Zhao Ying Zhang Xiao-Dan

Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

Liu Bo-Fei, Bai Li-Sha, Wei Chang-Chun, Sun Jian, Hou Guo-Fu, Zhao Ying, Zhang Xiao-Dan
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  • In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium material, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.
    • Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00706, 2011CBA00707), the National High Technology Research and Development Program of China (Grant No. 2013AA050302), the Science and Technology Support Program of Tianjin, China (Grant No. 12ZCZDGX03600), the Major Science and Technology Support Project of Tianjin, China (Grant No. 11TXSYGX22100), and the Specialized Research Fund for the Doctor Program of Higher Education of China (Grant No. 20120031110039).
    [1]

    Mackenzie K D, Eggert J R, Leopold D J, Li Y M, Lin S, Paul W 1985 Phys. Rev. B 31 2198

    [2]

    Yan B, Yue G, Sivec L, Yang J, Guha S, Jiang C 2011 Appl. Phys. Lett. 99 113512

    [3]

    Zhang X D, Zheng X X, Wang G H, Xu S Z, Yue Q, Lin Q, Wei C C, Sun J, Zhang D K, Xiong S Z, Geng X H, Zhao Y 2010 Acta Phys. Sin. 59 8231 (in Chinese) [张晓丹, 郑新霞, 王光红, 许盛之, 岳强, 林泉, 魏长春, 孙建, 张德坤, 熊绍珍, 耿新华, 赵颖 2010 物理学报 59 8231]

    [4]

    Zheng X X, Zhang X D, Yang S S, Wang G H, Xu S Z, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2011 Acta Phys. Sin. 60 068801 (in Chinese) [郑新霞, 张晓丹, 杨素素, 王光红, 许盛之, 魏长春, 孙建, 耿新华, 熊绍珍, 赵颖 2011 物理学报 60 068801]

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    Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011 Chin. Phys. B 20 108801

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    Han X Y, Hou G F, Zhang X D, Wei C C, Li G J, Zhang D K, Chen X L, Sun J, Zhang J J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 3563

    [7]

    Crandall R S 1983 J. Appl. Phys. 54 7176

    [8]

    Matsuda A, Koyama M, Ikuchi N, Imanishi Y, Tanaka K 1986 J. Appl. Phys. 25 54

    [9]

    Mahan A H, Menna P, Tsu R 1987 Appl. Phys. Lett. 51 1167

    [10]

    Banerjee A, Xu X, Yang J, Guha S 1995 Appl. Phys. Lett. 67 2975

    [11]

    Zimmer J, Stiebig H, Wagner H 1998 J. Appl. Phys. 84 611

  • [1]

    Mackenzie K D, Eggert J R, Leopold D J, Li Y M, Lin S, Paul W 1985 Phys. Rev. B 31 2198

    [2]

    Yan B, Yue G, Sivec L, Yang J, Guha S, Jiang C 2011 Appl. Phys. Lett. 99 113512

    [3]

    Zhang X D, Zheng X X, Wang G H, Xu S Z, Yue Q, Lin Q, Wei C C, Sun J, Zhang D K, Xiong S Z, Geng X H, Zhao Y 2010 Acta Phys. Sin. 59 8231 (in Chinese) [张晓丹, 郑新霞, 王光红, 许盛之, 岳强, 林泉, 魏长春, 孙建, 张德坤, 熊绍珍, 耿新华, 赵颖 2010 物理学报 59 8231]

    [4]

    Zheng X X, Zhang X D, Yang S S, Wang G H, Xu S Z, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2011 Acta Phys. Sin. 60 068801 (in Chinese) [郑新霞, 张晓丹, 杨素素, 王光红, 许盛之, 魏长春, 孙建, 耿新华, 熊绍珍, 赵颖 2011 物理学报 60 068801]

    [5]

    Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011 Chin. Phys. B 20 108801

    [6]

    Han X Y, Hou G F, Zhang X D, Wei C C, Li G J, Zhang D K, Chen X L, Sun J, Zhang J J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 3563

    [7]

    Crandall R S 1983 J. Appl. Phys. 54 7176

    [8]

    Matsuda A, Koyama M, Ikuchi N, Imanishi Y, Tanaka K 1986 J. Appl. Phys. 25 54

    [9]

    Mahan A H, Menna P, Tsu R 1987 Appl. Phys. Lett. 51 1167

    [10]

    Banerjee A, Xu X, Yang J, Guha S 1995 Appl. Phys. Lett. 67 2975

    [11]

    Zimmer J, Stiebig H, Wagner H 1998 J. Appl. Phys. 84 611

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  • Received Date:  13 June 2013
  • Accepted Date:  26 July 2013
  • Published Online:  20 October 2013

Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

  • 1. Key Laboratory of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Opto-Electronic Information Science and Technology Minsitry of Education, Institute of Photo Electronics Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00706, 2011CBA00707), the National High Technology Research and Development Program of China (Grant No. 2013AA050302), the Science and Technology Support Program of Tianjin, China (Grant No. 12ZCZDGX03600), the Major Science and Technology Support Project of Tianjin, China (Grant No. 11TXSYGX22100), and the Specialized Research Fund for the Doctor Program of Higher Education of China (Grant No. 20120031110039).

Abstract: In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium material, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.

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