基于ZnPc/C60太阳电池的光生电流研究

吴甲奇; 李文佳; 席曦; 孟庆蕾; 季静佳; 顾晓峰; 李果华

doi:10.7498/aps.60.078802

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摘要

本研究采用真空蒸镀法制备了ZnPc(20 nm)/C60(10 nm)电池,推导了该类型电池的光生电流表达式,并讨论了在光强和有效偏压恒定条件下的演变形式,实验结果证明理论分析是正确的.分析发现,小分子电池的短路电流密度随光强基本呈直线关系增长,决定此种关系的主因之一是有效偏压.100 ℃,20 min的最佳退火工艺,将电池的短路电流密度提高了43.8%,将其衰减常数从5.6 h提高到22.2 h.本文认为,接触界面态和串联电阻的减小是电池电流水平提升的主要原因.

关键词:

作者及机构信息

(1)江南大学理学院,无锡 214122;江苏(尚德)光伏技术研究院,无锡 214028; (2)江南大学理学院,无锡 214122;尚德太阳能电力有限公司,无锡 214028; (3)江南大学物联网工程学院,无锡 214122; (4)尚德太阳能电力有限公司,无锡 214028;江南大学物联网工程学院,无锡 214122; (5)尚德太阳能电力有限公司,无锡 214028;江苏(尚德)光伏技术研究院,无锡 214028

基金项目: 教育部留学回国人员科研启动基金(批准号:教外司留[2008]890)资助的课题.

参考文献

[1]	Kerp H R, Donker H, Koehorst R B M, Schaafsma T J, Faassen E E 1998 Chemical Physics Letters 298 302
[2]	Senthilarasu S, Velumani S, Sathyamoorthy R, Subbarayan A, Ascencio J A, Canizal G, Sebastian P J, Chavez J A, Perez R 2003 Appl. Phys. A 77 383
[3]	Aziz M S 2006 Solid-State Electronics 50 1238
[4]	Brousse B, Ratier B, Moliton A 2004 Thin Solid Films 451-452 81
[5]	Lessmann R, Hong Z, Scholz S, Maennig B, Riede M K, Leo K 2010 Organic Electronics 11 539
[6]	Holger Spanggaard, Krebs F C 2004 Solar Energy Materials & Solar Cells 83 125
[7]	Green M A, Emery K, HishikawaY, Warta W 2010 Prog. Photovolt: Res. Appl. 18 144
[8]	Kwong C Y, Djurii Ac＇ A B, Chui P C, Lam L S M, Chan W K 2003 Applied Physics A –Materials Science & Processing 77 555
[9]	Feng W, Gao Z K 2008 Acta Phys. Sin. 57 2567 (in Chinese) [封伟、高中扩 2008 物理学报 57 2567]
[10]	Rostalski J, Meissner D 2000 Solar Energy Materials & Solar Cells 63 37
[11]	ˇukauskas V K, Arlauskas A, Pranaitis M, Lessmann R, Riede M, Leo K 2010 Optical Materials
[12]	Ren J,Zheng J B, Zhao J L 2007 Acta Phys. Sin. 56 2868 (in Chinese)[任驹、郑建邦、赵建林物理学报 2007 56 2868]
[13]	You H L, Zhang C F 2009 Chin. Phys. B 18 349
[14]	Goodman A M, Rose A 1971 J. Appl. Phys. 42 2823
[15]	Baessler H 1993 Phys. Status Solidi.175 15
[16]	Koster L J A, Mihailetchi V D, Ramaker R, Xie H X, Blom P W M 2006 Proc. of SPIE 6192 61922
[17]	Koster L J A, Mihailetchi V D, Xie H X, Blom P W M 2005 Applied Physics Letters 87 203
[18]	Mihailetchi V D, Wildeman J, Blom P W M 2005 Physical Review Letters 94 126602
[19]	Senthilarasu S, Sathyamoorthy R, Lalitha S, Subbarayan A 2005 Solid-State Electronics 49 813
[20]	Geens W, Martens T, Poortmans J, Aernouts T, Manca J, Lutsen L, Heremans P, Borghs S, Mertens R, Vanderzande D 2004 Thin Solid Films 451-452 498
[21]	Hein C, Mankel E, Mayer T, Jaegermann W 2010 Solar Energy Materials & Solar Cells 94 662
[22]	You H L, Zhang C F 2009 Chin. Phys. B 18 2096
[23]	Karak S, Ray S K, Dhar A 2010 Solar Energy Materials & Solar Cells 94 836
[24]	Geiser A, Fan B, Benmansour H, Castro F, Heier J, Keller B, Mayerhofer K E, Nüesch F, Hany R 2008 Solar Energy Materials & Solar Cells 92 464
[25]	Li X S,Peng Y Q,Yang Q S,Xing H W, Lu F P 2007 Acta Phys. Sin. 56 5441 (in Chinese) [李训栓、彭应全、杨青森、刑宏伟、路飞平 2007 物理学报 56 5441]
[26]	Xi X, Li F X, Meng Q L, Ding Y Q, Ji J J, Shi Z R, Li G H 2010 Solar Energy Materials & Solar Cells 94 924

施引文献

[1]	Kerp H R, Donker H, Koehorst R B M, Schaafsma T J, Faassen E E 1998 Chemical Physics Letters 298 302
[2]	Senthilarasu S, Velumani S, Sathyamoorthy R, Subbarayan A, Ascencio J A, Canizal G, Sebastian P J, Chavez J A, Perez R 2003 Appl. Phys. A 77 383
[3]	Aziz M S 2006 Solid-State Electronics 50 1238
[4]	Brousse B, Ratier B, Moliton A 2004 Thin Solid Films 451-452 81
[5]	Lessmann R, Hong Z, Scholz S, Maennig B, Riede M K, Leo K 2010 Organic Electronics 11 539
[6]	Holger Spanggaard, Krebs F C 2004 Solar Energy Materials & Solar Cells 83 125
[7]	Green M A, Emery K, HishikawaY, Warta W 2010 Prog. Photovolt: Res. Appl. 18 144
[8]	Kwong C Y, Djurii Ac＇ A B, Chui P C, Lam L S M, Chan W K 2003 Applied Physics A –Materials Science & Processing 77 555
[9]	Feng W, Gao Z K 2008 Acta Phys. Sin. 57 2567 (in Chinese) [封伟、高中扩 2008 物理学报 57 2567]
[10]	Rostalski J, Meissner D 2000 Solar Energy Materials & Solar Cells 63 37
[11]	ˇukauskas V K, Arlauskas A, Pranaitis M, Lessmann R, Riede M, Leo K 2010 Optical Materials
[12]	Ren J,Zheng J B, Zhao J L 2007 Acta Phys. Sin. 56 2868 (in Chinese)[任驹、郑建邦、赵建林物理学报 2007 56 2868]
[13]	You H L, Zhang C F 2009 Chin. Phys. B 18 349
[14]	Goodman A M, Rose A 1971 J. Appl. Phys. 42 2823
[15]	Baessler H 1993 Phys. Status Solidi.175 15
[16]	Koster L J A, Mihailetchi V D, Ramaker R, Xie H X, Blom P W M 2006 Proc. of SPIE 6192 61922
[17]	Koster L J A, Mihailetchi V D, Xie H X, Blom P W M 2005 Applied Physics Letters 87 203
[18]	Mihailetchi V D, Wildeman J, Blom P W M 2005 Physical Review Letters 94 126602
[19]	Senthilarasu S, Sathyamoorthy R, Lalitha S, Subbarayan A 2005 Solid-State Electronics 49 813
[20]	Geens W, Martens T, Poortmans J, Aernouts T, Manca J, Lutsen L, Heremans P, Borghs S, Mertens R, Vanderzande D 2004 Thin Solid Films 451-452 498
[21]	Hein C, Mankel E, Mayer T, Jaegermann W 2010 Solar Energy Materials & Solar Cells 94 662
[22]	You H L, Zhang C F 2009 Chin. Phys. B 18 2096
[23]	Karak S, Ray S K, Dhar A 2010 Solar Energy Materials & Solar Cells 94 836
[24]	Geiser A, Fan B, Benmansour H, Castro F, Heier J, Keller B, Mayerhofer K E, Nüesch F, Hany R 2008 Solar Energy Materials & Solar Cells 92 464
[25]	Li X S,Peng Y Q,Yang Q S,Xing H W, Lu F P 2007 Acta Phys. Sin. 56 5441 (in Chinese) [李训栓、彭应全、杨青森、刑宏伟、路飞平 2007 物理学报 56 5441]
[26]	Xi X, Li F X, Meng Q L, Ding Y Q, Ji J J, Shi Z R, Li G H 2010 Solar Energy Materials & Solar Cells 94 924

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基于ZnPc/C60太阳电池的光生电流研究

1. (1)江南大学理学院,无锡 214122;江苏(尚德)光伏技术研究院,无锡 214028; (2)江南大学理学院,无锡 214122;尚德太阳能电力有限公司,无锡 214028; (3)江南大学物联网工程学院,无锡 214122; (4)尚德太阳能电力有限公司,无锡 214028;江南大学物联网工程学院,无锡 214122; (5)尚德太阳能电力有限公司,无锡 214028;江苏(尚德)光伏技术研究院,无锡 214028

基金项目:

教育部留学回国人员科研启动基金(批准号:教外司留[2008]890)资助的课题.

收稿日期: 2010-08-08

修回日期: 2010-09-28

刊出日期: 2011-07-15

摘要: 本研究采用真空蒸镀法制备了ZnPc(20 nm)/C60(10 nm)电池,推导了该类型电池的光生电流表达式,并讨论了在光强和有效偏压恒定条件下的演变形式,实验结果证明理论分析是正确的.分析发现,小分子电池的短路电流密度随光强基本呈直线关系增长,决定此种关系的主因之一是有效偏压.100 ℃,20 min的最佳退火工艺,将电池的短路电流密度提高了43.8%,将其衰减常数从5.6 h提高到22.2 h.本文认为,接触界面态和串联电阻的减小是电池电流水平提升的主要原因.

关键词:

Investigation on photocurrent of ZnPc/C60 solar cells

1.
(1)School of Science, Jiangnan University, Wuxi 214122, China;Jiangsu (Suntech) Institute for Photovoltaic Technology, Wuxi 214028, China; (2)School of Science, Jiangnan University, Wuxi 214122, China;Suntech Power Co., Ltd., Wuxi 214028, China; (3)School of the Internet of Things, Jiangnan University, Wuxi 214122, China; (4)Suntech Power Co., Ltd., Wuxi 214028, China;Jiangsu (Suntech) Institute for Photovoltaic Technology, Wuxi 214028, China; (5)Suntech Power Co., Ltd., Wuxi 214028, China;Schoo

Received Date: 08 August 2010

Accepted Date: 28 September 2010

Published Online: 15 July 2011

Abstract: Solar cells with structure of ZnPc (20 nm)/C60 (10 nm) are fabricated by thermal evaporation. The photocurrent density (Jph) expressed by effective applied voltage (V0-Va) and light intensity (I) is derived from an analytical method, and it is shown that the results from the model are in good agreement with experimental results. The short-circuit current density (JSC) exhibits a nearly linear dependence on light intensity, which is partially determined by effective applied voltage. Thermal annealing treatment under an optimal condition of 100 ℃ and 20 min, improves JSC by 43.8%, lengthening its attenuation constant from 5.6h to 22.2 h, which is attributed to the improvement on interfacial morphology and the decrease of series resistance due to better contact of the layers.

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