Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Effects of Cu elements on Cu(In,Ga)Se2 film and solar cell

Liu Fang-Fang He Qing Zhou Zhi-Qiang Sun Yun

Effects of Cu elements on Cu(In,Ga)Se2 film and solar cell

Liu Fang-Fang, He Qing, Zhou Zhi-Qiang, Sun Yun
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • The Cu elements of Cu (In, Ga) Se2 (CIGS) have very important influences on the electrical properties of CIGS absorber and solar cells. In this paper, Cu-poor and Cu-rich absorber layers (0.7 Cu/(Ga+In) (1.15) and solar cells are prepared by evaporation method. The SEM and Hall measurements reveal that Cu-rich material shows superior structural (larger grain size, better crystalline) and electrical (lower resistivity, higher mobility) properties to Cu-poor material. However, I-V tests show that the efficiency of Cu-poor solar cell is better than that of the Cu-rich device. The temperature-dependent I-V tests indicate that electron loss is mainly due to the bulk recombination in Cu-poor solar cell, and the activation energy of recombination is comparable to the band gap energy of Cu-poor solar cell. In contrast, in the Cu-rich devices the recombination at the heterointerface is dominant, and the activation energy is smaller than the band gap energy of the absorber material, which is an important drawback of open circuit voltage. Finally, Cu-poor surface on Cu-rich absorber is prepared by three-stage evaporation process, which reduces the short-circuit current and open-circuit voltage loss and optimizes the performance of CIGS solar cells. The efficiency of CIGS solar cell is achieved to be as high as more than 15%.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61144002) and Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. BE033511).
    [1]

    Jackson P, Hariskos D, Lotter E, Paetel S, Wuerz R, Menner R, Wischmann W, Powalla M 2011 Prog. Photovolt. 19 894

    [2]

    Turcu M, Pakma O, Rau U 2002 Appl. Phys. Lett. 80 2598

    [3]

    Siebenntritt S, Gutay L, Regesch D, Aida Y 2013 Sol. Energy Mater. Sol. Cells 119 18

    [4]

    Monsefi M, Kuo D H 2013 J. Alloys Comp. 580 348

    [5]

    Liu F F, Zhang L, He Q 2013 Acta Phys. Sin. 62 7 (in Chinese) [刘芳芳, 张力, 何青 2013 物理学报 62 7]

    [6]

    Zhang S B, Wei S H, Zunger A, Katayama-Yoshida H 1998 Phys. Rev. B 57 9642

    [7]

    Rau U, Jasenek A, Schock H W, Engelhardt F, Meyer T 2000 Thin Solid Films 361 299

    [8]

    Turcu M C 2003 Ph. D. Dissertation (Dresden: der Technische University)

    [9]

    rerum naturalium 2004 Ph. D. Dissertation (Temesburg, Rumänien)

    [10]

    Liu F F, Sun Y, Zhang L 2009 J. Synth. Cryst. 38 455 (in Chinese) [刘芳芳, 孙云, 何青 2009 人工晶体学报 38 455]

    [11]

    Moller H J 1991 Solar Cells 31 77

  • [1]

    Jackson P, Hariskos D, Lotter E, Paetel S, Wuerz R, Menner R, Wischmann W, Powalla M 2011 Prog. Photovolt. 19 894

    [2]

    Turcu M, Pakma O, Rau U 2002 Appl. Phys. Lett. 80 2598

    [3]

    Siebenntritt S, Gutay L, Regesch D, Aida Y 2013 Sol. Energy Mater. Sol. Cells 119 18

    [4]

    Monsefi M, Kuo D H 2013 J. Alloys Comp. 580 348

    [5]

    Liu F F, Zhang L, He Q 2013 Acta Phys. Sin. 62 7 (in Chinese) [刘芳芳, 张力, 何青 2013 物理学报 62 7]

    [6]

    Zhang S B, Wei S H, Zunger A, Katayama-Yoshida H 1998 Phys. Rev. B 57 9642

    [7]

    Rau U, Jasenek A, Schock H W, Engelhardt F, Meyer T 2000 Thin Solid Films 361 299

    [8]

    Turcu M C 2003 Ph. D. Dissertation (Dresden: der Technische University)

    [9]

    rerum naturalium 2004 Ph. D. Dissertation (Temesburg, Rumänien)

    [10]

    Liu F F, Sun Y, Zhang L 2009 J. Synth. Cryst. 38 455 (in Chinese) [刘芳芳, 孙云, 何青 2009 人工晶体学报 38 455]

    [11]

    Moller H J 1991 Solar Cells 31 77

  • Citation:
Metrics
  • Abstract views:  1252
  • PDF Downloads:  682
  • Cited By: 0
Publishing process
  • Received Date:  15 November 2013
  • Accepted Date:  11 December 2013
  • Published Online:  05 March 2014

Effects of Cu elements on Cu(In,Ga)Se2 film and solar cell

  • 1. Key Laboratory of Photoelectronic Thin Film Devices and Technique of Tianjin, Nankai University, Tianjin 300071, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 61144002) and Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. BE033511).

Abstract: The Cu elements of Cu (In, Ga) Se2 (CIGS) have very important influences on the electrical properties of CIGS absorber and solar cells. In this paper, Cu-poor and Cu-rich absorber layers (0.7 Cu/(Ga+In) (1.15) and solar cells are prepared by evaporation method. The SEM and Hall measurements reveal that Cu-rich material shows superior structural (larger grain size, better crystalline) and electrical (lower resistivity, higher mobility) properties to Cu-poor material. However, I-V tests show that the efficiency of Cu-poor solar cell is better than that of the Cu-rich device. The temperature-dependent I-V tests indicate that electron loss is mainly due to the bulk recombination in Cu-poor solar cell, and the activation energy of recombination is comparable to the band gap energy of Cu-poor solar cell. In contrast, in the Cu-rich devices the recombination at the heterointerface is dominant, and the activation energy is smaller than the band gap energy of the absorber material, which is an important drawback of open circuit voltage. Finally, Cu-poor surface on Cu-rich absorber is prepared by three-stage evaporation process, which reduces the short-circuit current and open-circuit voltage loss and optimizes the performance of CIGS solar cells. The efficiency of CIGS solar cell is achieved to be as high as more than 15%.

Reference (11)

Catalog

    /

    返回文章
    返回