高速率沉积磁控溅射技术制备Ge点的退火生长研究

张鑫鑫; 靳映霞; 叶晓松; 王茺; 杨宇

doi:10.7498/aps.63.156802

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摘要

采用磁控溅射技术在Si衬底上以350 ℃沉积14 nm的非晶Ge薄膜，通过退火改变系统生长热能，实现了低维Ge/Si点的生长. 利用原子力显微镜（AFM）和拉曼（Raman）光谱所获得的形貌和声子振动信息，对Ge点的形成机理和演变规律进行了研究. 实验结果表明：在675 ℃退火30 min后，非晶Ge薄膜转变为密度高达8.5109 cm-2的Ge点. 通过Ostwald熟化理论、表面扩散模型和对激活能的计算，很好地解释了退火过程中，Ge原子在Si表面迁移、最终形成纳米点的行为. 研究结果表明用高速沉积磁控溅射配合热退火制备Ge/Si纳米点的方法，可为自组织量子点生长实验提供一定的理论支撑.

关键词:

作者及机构信息

1.
云南大学光电信息材料研究所, 昆明 650091

基金项目: 国家自然科学基金（批准号：11274266）、云南省应用基础研究计划重点项目（批准号：2013FA029）、云南省人才引进基金（批准号：W8090304）和云南大学校基金（批准号：2011YB47）资助的课题.

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[15]
[16]	Konle J, Presting H, Kibbel H 2003 Physics E 16 596
[17]
[18]	Shchukin V A, Ledentsov N N, Kop'ev P S, Bimberg D 1995 Phys. Rev. Lett. 75 2968
[19]	Medeiros-Ribeiro G, Kamins T I, Ohlberg D A A, Stanley Williams R 1998 Science 279 353
[20]
[21]
[22]	Kamins T I, Medeiros-Ribeiro G, Ohlberg D A A, Stanley Williams R 1999 Journal of Applied Physics 85 1159
[23]	Kamins T I, Carr E C, Williams Rosner R S 1997 Journal of Applied Physics 81 211
[24]
[25]	Ross F M, Tersoff J, Tromp R M 1998 Phys. Rev. Lett. 80 984
[26]
[27]	Ross F M, Tromp R M, Reuter M C 1999 Science 286 5446
[28]
[29]	Tan P H, Brunner K, Bougeard D, Abstreiter G 2003 Phys. Rev. B 68 125302
[30]
[31]	Yang J, Wang C, Jin Y X, Tao D P, Yang Y 2012 Acta Phys. Sin. 61 016804 (in Chinese) [杨杰, 王茺, 靳映霞, 李亮, 陶东平, 杨宇 2012 物理学报 61 016804]
[32]
[33]
[34]	Zhang X G, Wang C, Lu Z Q, Yang J, Yang Y 2011 Acta Phys. Sin. 60 096101 (in Chinese) [张学贵, 王茺, 鲁植全, 杨杰, 李亮, 杨宇 2011 物理学报 60 096101]
[35]
[36]	Liu Y M, Yu Z Y and Ren X M 2009 Chin. Phys. B 18 881
[37]	Wang D M, Sun X, Wu Z Q 2002 Chin. Phys. Lett. 19 720
[38]
[39]	Raab A, Springholz G 2000 Appl. Phys. Lett. 77 2991
[40]
[41]	Marchenko V I 1981 Sov. Phys. JETP. 54 605
[42]
[43]
[44]	Wu Z Q, Wang B Thin Film Growth (Beijing:Science Press) pp142-166 (in Chinese) [吴自勤, 王兵2001 薄膜生长 (北京: 科学技术出版社)第142–166页]
[45]	Huang K 1988 Solid State Physics (Beijing:Higher Education Press) pp529-555 (in Chinese) [黄昆1988固体物理学(北京: 高等教育出版社)第529–555页]
[46]
[47]
[48]	Pivac B, Kovaevi I, Dubek P, Radi N, Bernstorff S, Slaoui A 2006 Thin. Solid. Film. 511 153
[49]
[50]	Kovaevi I, Pivaca B, Dubek P, Zorc H, Radi N, Bernstorff S, Campione M, Sassellal A 2007 Applied Surface Science 253 3034
[51]
[52]	Ditchfield R, Seebauer E G 1999 Phys. Rev. Lett. 82 1185
[53]
[54]	Das Amal K, Ghose S K, Dev B N, Kuri G, Yang T R 2000 Applied Surface Science 165 260
[55]	Krikorian E, Sneed R J 1966 J. Appl. Phys. 37 3665

施引文献

[1]	Yakimov A I, DvurechenskiœA V, Nikiforov A I, Chaœkovskiœ S V, Tiœs S A 2003 Semiconductors 37 1345
[2]
[3]	Liu Z, Li Y M, Xue C L, Cheng B W, Wang Q M 2013 Chin. Phys. B 22 116804
[4]
[5]
[6]	Tong S, Liu J L, Wan J, Wang K L 2002 Applied Physics Letters 80 1189
[7]
[8]	Ba L, Zeng J L, Zhang S Y, Wu ZQ 1996 Chin. Phys. 5 530
[9]	Qu X X, Chen K J, Chen M R, Hu C, Li Z F, Feng D 1994 Chin. Phys. 3 730
[10]
[11]	Ning Z Y, Wu X M, Chen J F, Cheng S Y, Hen Z X, Zhang S Q 1994 Chin. Phys. 3 682
[12]
[13]
[14]	Liu Z, Zhou T W, Li L L, Zuo Y H, He C, Li C B, Xue C L, Cheng B W, Wang Q M 2013 Applied Physics Letters 103 082101
[15]
[16]	Konle J, Presting H, Kibbel H 2003 Physics E 16 596
[17]
[18]	Shchukin V A, Ledentsov N N, Kop'ev P S, Bimberg D 1995 Phys. Rev. Lett. 75 2968
[19]	Medeiros-Ribeiro G, Kamins T I, Ohlberg D A A, Stanley Williams R 1998 Science 279 353
[20]
[21]
[22]	Kamins T I, Medeiros-Ribeiro G, Ohlberg D A A, Stanley Williams R 1999 Journal of Applied Physics 85 1159
[23]	Kamins T I, Carr E C, Williams Rosner R S 1997 Journal of Applied Physics 81 211
[24]
[25]	Ross F M, Tersoff J, Tromp R M 1998 Phys. Rev. Lett. 80 984
[26]
[27]	Ross F M, Tromp R M, Reuter M C 1999 Science 286 5446
[28]
[29]	Tan P H, Brunner K, Bougeard D, Abstreiter G 2003 Phys. Rev. B 68 125302
[30]
[31]	Yang J, Wang C, Jin Y X, Tao D P, Yang Y 2012 Acta Phys. Sin. 61 016804 (in Chinese) [杨杰, 王茺, 靳映霞, 李亮, 陶东平, 杨宇 2012 物理学报 61 016804]
[32]
[33]
[34]	Zhang X G, Wang C, Lu Z Q, Yang J, Yang Y 2011 Acta Phys. Sin. 60 096101 (in Chinese) [张学贵, 王茺, 鲁植全, 杨杰, 李亮, 杨宇 2011 物理学报 60 096101]
[35]
[36]	Liu Y M, Yu Z Y and Ren X M 2009 Chin. Phys. B 18 881
[37]	Wang D M, Sun X, Wu Z Q 2002 Chin. Phys. Lett. 19 720
[38]
[39]	Raab A, Springholz G 2000 Appl. Phys. Lett. 77 2991
[40]
[41]	Marchenko V I 1981 Sov. Phys. JETP. 54 605
[42]
[43]
[44]	Wu Z Q, Wang B Thin Film Growth (Beijing:Science Press) pp142-166 (in Chinese) [吴自勤, 王兵2001 薄膜生长 (北京: 科学技术出版社)第142–166页]
[45]	Huang K 1988 Solid State Physics (Beijing:Higher Education Press) pp529-555 (in Chinese) [黄昆1988固体物理学(北京: 高等教育出版社)第529–555页]
[46]
[47]
[48]	Pivac B, Kovaevi I, Dubek P, Radi N, Bernstorff S, Slaoui A 2006 Thin. Solid. Film. 511 153
[49]
[50]	Kovaevi I, Pivaca B, Dubek P, Zorc H, Radi N, Bernstorff S, Campione M, Sassellal A 2007 Applied Surface Science 253 3034
[51]
[52]	Ditchfield R, Seebauer E G 1999 Phys. Rev. Lett. 82 1185
[53]
[54]	Das Amal K, Ghose S K, Dev B N, Kuri G, Yang T R 2000 Applied Surface Science 165 260
[55]	Krikorian E, Sneed R J 1966 J. Appl. Phys. 37 3665

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高速率沉积磁控溅射技术制备Ge点的退火生长研究

1. 云南大学光电信息材料研究所, 昆明 650091

基金项目:

国家自然科学基金（批准号：11274266）、云南省应用基础研究计划重点项目（批准号：2013FA029）、云南省人才引进基金（批准号：W8090304）和云南大学校基金（批准号：2011YB47）资助的课题.

收稿日期: 2013-12-24

修回日期: 2014-04-08

刊出日期: 2014-08-05

摘要: 采用磁控溅射技术在Si衬底上以350 ℃沉积14 nm的非晶Ge薄膜，通过退火改变系统生长热能，实现了低维Ge/Si点的生长. 利用原子力显微镜（AFM）和拉曼（Raman）光谱所获得的形貌和声子振动信息，对Ge点的形成机理和演变规律进行了研究. 实验结果表明：在675 ℃退火30 min后，非晶Ge薄膜转变为密度高达8.5109 cm-2的Ge点. 通过Ostwald熟化理论、表面扩散模型和对激活能的计算，很好地解释了退火过程中，Ge原子在Si表面迁移、最终形成纳米点的行为. 研究结果表明用高速沉积磁控溅射配合热退火制备Ge/Si纳米点的方法，可为自组织量子点生长实验提供一定的理论支撑.

关键词:

Study on the annealing growth of Ge dots at high deposition rate by using magnetron sputtering technique

1.
Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China

Fund Project:

Project supported by the National Natural Science Foundation of China (Grant No. 11274266), the Key project of Application Basis of Yunnan Province, China (Grant No. 2013FA029), the Normal Project of Yunnan University of China (Grant No. 2011YB47), and the Project for Excellent Talents of Yunnan Province, China (Grant No. W8090304).

Received Date: 24 December 2013

Accepted Date: 08 April 2014

Published Online: 05 August 2014

Abstract: The 14 nm thick Ge thin films are firstly deposited on Si substrate at 350 ℃ by using the magnetron sputtering technique, then the Ge/Si dots are successfully fabricated by annealing those Ge films. According to the morphology and phonon vibration information obtained by AFM and Raman spectroscopy, the formation and evolution mechanism are studied in detail. Experimental results indicate that the amorphous Ge films have been converted to Ge dots with a density of 8.5109 cm-2 after 675 ℃ annealing for 30 min. By using Ostwald ripening theory, surface diffusion model, and calculation of the activation energy, the surface transfer and the dot formation behavior of Ge atoms can be well interpreted. Based on the fabrication technique of Ge/Si nanodots at a high deposition rate combined with the thermal annealing, we have provided a theoretical support for the experiment on self-assembled growth of Ge quantum dots.

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