-
采用磁控溅射技术在Si衬底上以350 ℃沉积14 nm的非晶Ge薄膜，通过退火改变系统生长热能，实现了低维Ge/Si点的生长. 利用原子力显微镜（AFM）和拉曼（Raman）光谱所获得的形貌和声子振动信息，对Ge点的形成机理和演变规律进行了研究. 实验结果表明：在675 ℃退火30 min后，非晶Ge薄膜转变为密度高达8.5109 cm-2的Ge点. 通过Ostwald熟化理论、表面扩散模型和对激活能的计算，很好地解释了退火过程中，Ge原子在Si表面迁移、最终形成纳米点的行为. 研究结果表明用高速沉积磁控溅射配合热退火制备Ge/Si纳米点的方法，可为自组织量子点生长实验提供一定的理论支撑.
[1] Yakimov A I, DvurechenskiœA V, Nikiforov A I, Chaœkovskiœ S V, Tiœs S A 2003 Semiconductors 37 1345
[2] [3] Liu Z, Li Y M, Xue C L, Cheng B W, Wang Q M 2013 Chin. Phys. B 22 116804
[4] [5] [6] Tong S, Liu J L, Wan J, Wang K L 2002 Applied Physics Letters 80 1189
[7] [8] Ba L, Zeng J L, Zhang S Y, Wu ZQ 1996 Chin. Phys. 5 530
[9] Qu X X, Chen K J, Chen M R, Hu C, Li Z F, Feng D 1994 Chin. Phys. 3 730
[10] [11] Ning Z Y, Wu X M, Chen J F, Cheng S Y, Hen Z X, Zhang S Q 1994 Chin. Phys. 3 682
[12] [13] [14] Liu Z, Zhou T W, Li L L, Zuo Y H, He C, Li C B, Xue C L, Cheng B W, Wang Q M 2013 Applied Physics Letters 103 082101
[15] [16] Konle J, Presting H, Kibbel H 2003 Physics E 16 596
[17] [18] Shchukin V A, Ledentsov N N, Kop'ev P S, Bimberg D 1995 Phys. Rev. Lett. 75 2968
[19] Medeiros-Ribeiro G, Kamins T I, Ohlberg D A A, Stanley Williams R 1998 Science 279 353
[20] [21] [22] Kamins T I, Medeiros-Ribeiro G, Ohlberg D A A, Stanley Williams R 1999 Journal of Applied Physics 85 1159
[23] Kamins T I, Carr E C, Williams Rosner R S 1997 Journal of Applied Physics 81 211
[24] [25] Ross F M, Tersoff J, Tromp R M 1998 Phys. Rev. Lett. 80 984
[26] [27] Ross F M, Tromp R M, Reuter M C 1999 Science 286 5446
[28] [29] Tan P H, Brunner K, Bougeard D, Abstreiter G 2003 Phys. Rev. B 68 125302
[30] [31] Yang J, Wang C, Jin Y X, Tao D P, Yang Y 2012 Acta Phys. Sin. 61 016804 (in Chinese) [杨杰, 王茺, 靳映霞, 李亮, 陶东平, 杨宇 2012 物理学报 61 016804]
[32] [33] [34] Zhang X G, Wang C, Lu Z Q, Yang J, Yang Y 2011 Acta Phys. Sin. 60 096101 (in Chinese) [张学贵, 王茺, 鲁植全, 杨杰, 李亮, 杨宇 2011 物理学报 60 096101]
[35] [36] Liu Y M, Yu Z Y and Ren X M 2009 Chin. Phys. B 18 881
[37] Wang D M, Sun X, Wu Z Q 2002 Chin. Phys. Lett. 19 720
[38] [39] Raab A, Springholz G 2000 Appl. Phys. Lett. 77 2991
[40] [41] Marchenko V I 1981 Sov. Phys. JETP. 54 605
[42] [43] [44] Wu Z Q, Wang B Thin Film Growth (Beijing:Science Press) pp142-166 (in Chinese) [吴自勤, 王兵2001 薄膜生长 (北京: 科学技术出版社)第142–166页]
[45] Huang K 1988 Solid State Physics (Beijing:Higher Education Press) pp529-555 (in Chinese) [黄昆1988固体物理学(北京: 高等教育出版社)第529–555页]
[46] [47] [48] Pivac B, Kovaevi I, Dubek P, Radi N, Bernstorff S, Slaoui A 2006 Thin. Solid. Film. 511 153
[49] [50] Kovaevi I, Pivaca B, Dubek P, Zorc H, Radi N, Bernstorff S, Campione M, Sassellal A 2007 Applied Surface Science 253 3034
[51] [52] Ditchfield R, Seebauer E G 1999 Phys. Rev. Lett. 82 1185
[53] [54] Das Amal K, Ghose S K, Dev B N, Kuri G, Yang T R 2000 Applied Surface Science 165 260
[55] Krikorian E, Sneed R J 1966 J. Appl. Phys. 37 3665
-
[1] Yakimov A I, DvurechenskiœA V, Nikiforov A I, Chaœkovskiœ S V, Tiœs S A 2003 Semiconductors 37 1345
[2] [3] Liu Z, Li Y M, Xue C L, Cheng B W, Wang Q M 2013 Chin. Phys. B 22 116804
[4] [5] [6] Tong S, Liu J L, Wan J, Wang K L 2002 Applied Physics Letters 80 1189
[7] [8] Ba L, Zeng J L, Zhang S Y, Wu ZQ 1996 Chin. Phys. 5 530
[9] Qu X X, Chen K J, Chen M R, Hu C, Li Z F, Feng D 1994 Chin. Phys. 3 730
[10] [11] Ning Z Y, Wu X M, Chen J F, Cheng S Y, Hen Z X, Zhang S Q 1994 Chin. Phys. 3 682
[12] [13] [14] Liu Z, Zhou T W, Li L L, Zuo Y H, He C, Li C B, Xue C L, Cheng B W, Wang Q M 2013 Applied Physics Letters 103 082101
[15] [16] Konle J, Presting H, Kibbel H 2003 Physics E 16 596
[17] [18] Shchukin V A, Ledentsov N N, Kop'ev P S, Bimberg D 1995 Phys. Rev. Lett. 75 2968
[19] Medeiros-Ribeiro G, Kamins T I, Ohlberg D A A, Stanley Williams R 1998 Science 279 353
[20] [21] [22] Kamins T I, Medeiros-Ribeiro G, Ohlberg D A A, Stanley Williams R 1999 Journal of Applied Physics 85 1159
[23] Kamins T I, Carr E C, Williams Rosner R S 1997 Journal of Applied Physics 81 211
[24] [25] Ross F M, Tersoff J, Tromp R M 1998 Phys. Rev. Lett. 80 984
[26] [27] Ross F M, Tromp R M, Reuter M C 1999 Science 286 5446
[28] [29] Tan P H, Brunner K, Bougeard D, Abstreiter G 2003 Phys. Rev. B 68 125302
[30] [31] Yang J, Wang C, Jin Y X, Tao D P, Yang Y 2012 Acta Phys. Sin. 61 016804 (in Chinese) [杨杰, 王茺, 靳映霞, 李亮, 陶东平, 杨宇 2012 物理学报 61 016804]
[32] [33] [34] Zhang X G, Wang C, Lu Z Q, Yang J, Yang Y 2011 Acta Phys. Sin. 60 096101 (in Chinese) [张学贵, 王茺, 鲁植全, 杨杰, 李亮, 杨宇 2011 物理学报 60 096101]
[35] [36] Liu Y M, Yu Z Y and Ren X M 2009 Chin. Phys. B 18 881
[37] Wang D M, Sun X, Wu Z Q 2002 Chin. Phys. Lett. 19 720
[38] [39] Raab A, Springholz G 2000 Appl. Phys. Lett. 77 2991
[40] [41] Marchenko V I 1981 Sov. Phys. JETP. 54 605
[42] [43] [44] Wu Z Q, Wang B Thin Film Growth (Beijing:Science Press) pp142-166 (in Chinese) [吴自勤, 王兵2001 薄膜生长 (北京: 科学技术出版社)第142–166页]
[45] Huang K 1988 Solid State Physics (Beijing:Higher Education Press) pp529-555 (in Chinese) [黄昆1988固体物理学(北京: 高等教育出版社)第529–555页]
[46] [47] [48] Pivac B, Kovaevi I, Dubek P, Radi N, Bernstorff S, Slaoui A 2006 Thin. Solid. Film. 511 153
[49] [50] Kovaevi I, Pivaca B, Dubek P, Zorc H, Radi N, Bernstorff S, Campione M, Sassellal A 2007 Applied Surface Science 253 3034
[51] [52] Ditchfield R, Seebauer E G 1999 Phys. Rev. Lett. 82 1185
[53] [54] Das Amal K, Ghose S K, Dev B N, Kuri G, Yang T R 2000 Applied Surface Science 165 260
[55] Krikorian E, Sneed R J 1966 J. Appl. Phys. 37 3665
| 引用本文: |
|
| Citation: |
|
计量
- 文章访问数: 568
- PDF下载量: 504
- 被引次数: 0
下载: