| 引用本文: |
|
| Citation: |
|
摘要: 利用微波ECR磁控反应溅射法在室温下制备无氢SiNx薄膜.通过傅里叶红外光谱 、X射线电子谱、膜厚仪、纳米硬度仪、原子力显微镜等分析手段，分析了N2流 量、Si靶溅射功率等实验参数对SiNx薄膜结构、化学配比以及机械性质的影响. 结果表明，SiNx薄膜中Si-N结构、化学配比及机械性质与等离子体中的Si元素 含量关系密切，随着N2流量的增加或者Si靶溅射功率的降低，等离子体中的Si 元素含量降低，SiNx薄膜结构、化学配比及硬度发生变化，红外光谱发生偏移 ，硬度下降，沉积速率降低.
Abstract: Hydrogen-free silicon nitride films were deposited at room temperature by microw ave electron cyclotron resonance (ECR) plasma source enhanced unbalanced magnetr on sputtering system. Fourier-transform infrared spectroscopy and X-ray photoele ctron spectroscopy were used to study the bond type, the change of bond structur es, and the stoichiometry of the silicon nitride films. Atomic-force microscopy and nano-indentation were used to study the morphological features and mechanica l characteristics of the films. The results indicate that the structure and char acteristics of the films deposited by this technique depend strongly on the dens ity of sputtered Si in plasma and the films deposited at 4 sccm N2 fl ow show excellent stoichiometry and properties.
下载:
