| 引用本文: |
|
| Citation: |
|
计量
- 文章访问数: 3216
- PDF下载量: 1717
- 被引次数: 0
物理学报. 2009, 58(1): 432-437.
doi: 10.7498/aps.58.432.
沉积参数对SiNx薄膜结构及阻透性能的影响
- 收稿日期: 2008-06-17
- 修回日期: 2008-08-04
- 刊出日期: 2009-01-20
English Abstract
Influence of deposition parameter on chemical structure and moisture resistant properties for SiNx films deposited by DC pulse magnetron sputtering
- Received Date:
17 June 2008
- Accepted Date:
04 August 2008
- Published Online:
20 January 2009
Abstract: Hydrogen-free SiNx films were deposited by direct current pulse magnetron sputtering at room temperature. We have studied the influence of N2 flow rate and Si target sputtering power on the structural characteristics and properties of deposited films by using Fourier-transform infrared spectroscopy，auto water vapor permeability tester，ultraviolet-visible spectrophotometer，stylus profilometer，and contact angle measurement. The results indicate that the content of Si—O bonding in SiNx films increaseds and moisture resistant property of SiNx films decreases with increasing N2 flow rate or decreasing Si target sputtering power. The films deposited at 300W of Si sputtering power and 6sccm of N2 flow rate show excellent water vapor permeability (0.764) with transmittance higher than 97.5% in visible range.
-
Keywords:
- SiNx /
- magnetron sputtering /
- microstructure /
- water vapor permeability
下载: