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利用直流脉冲磁控溅射方法在室温下通过改变O2流量制备具有不同晶体结构的N掺杂TiO2薄膜,利用台阶仪、X射线光电子能谱仪、X射线衍射仪、紫外-可见分光光度计等设备对薄膜沉积速率、化学成分、晶体结构、禁带宽度等进行分析.结果表明:所制备的薄膜元素配比约为TiO1.68±0.06N0.11±0.01,N为替位掺杂,所有样品退火前后均未形成Ti—N相结构,N掺杂TiO2薄膜的沉积速率、晶体结构等主要依赖于O2流量.在O2流量为2 sccm时,N掺杂TiO2薄膜沉积速率相对较高,薄膜为非晶态结构,但薄膜内含有锐钛矿(anatase)和金红石(rutile)相晶核,退火后薄膜呈anatase和rutile相混合结构,禁带宽度仅为2.86 eV.随着O2流量的增加,薄膜沉积速率单调下降,退火后样品禁带宽度逐渐增加.当O2流量为12 sccm时,薄膜为anatase相择优生长,退火后呈anatase相结构,禁带宽度为3.2 eV.综合本实验的分析结果,要在室温条件下制备晶态N掺杂TiO2薄膜,需在高O2流量(＞10 sccn)条件下制备.
[1] Fujishima A, Honda K 1972 Nature 37 238
[2] Wasielewski R, Domaradzki J, Wojcieszak D, Kaczmarek D, Borkowska A, Prociow E L, Ciszewski A 2008 Appl. Surf. Sci. 254 4396
[3] Press) p73 (in Chinese)[菅井秀郎 2002 等离子体电子工程学 (北京:科学出版社)]
[4] Solid Films 516 1434
[5] Borrás A, Yanguas-Gil A, Barranco A, Cotrino A, González-Elipe A R 2007 Phys. Rev. B 76 235303
[6] Tavares C J, Marques S M, Lanceros-Méndez S, Sencadas V, Teixeira V, Carneiro J O, Martins A J, Fernandes A J 2008 Thin
[7] Hu L H, Dai J, Liu W Q, Wang K J, Dai S Y 2009 Acta Phys. Sin. 58 1115 (in Chinese)[胡林华、戴 俊、刘伟庆、王孔嘉、戴松元2009 物理学报 58 1115]
[8] Shah I, Li W, Huang CP, Jung O, Ni C 2002 Proc. Natl. Acad. Sci. U. S. A. 99 6482
[9] Li W, Frenkel A I, Woicik J C, Ni C, Shah S I 2005 Phys. Rev. B 72 155315
[10] Asahi R, Morikawa T, Ohwaki T, Aoki K, Taga Y 2001 Science 293 269
[11] Tavares C J, Marques S M, Viseu T, Teixeira V, Carneiro J O, Alves E, Barradas N P, Munnik F, Girardeau T, Rivière J P 2009 J. Appl. Phys. 106 113535
[12] Sui R H, Young J L, Berlinguette C P 2010 J. Mater. Chem. 20 498
[13] Yasunori T 2009 Thin Solid Films 517 3167
[14] Tomás S A, Luna-Resendis A, Cortés-Cuautli L C, Jacinto D 2009 Thin Solid Films 518 1337
[15] Ding W Y, Wang H L, Miao Z, Zhang J J, Chai W P 2009 Acta Phys. Sin. 58 432 (in Chinese)[丁万昱、王华林、苗 壮、张俊计、柴卫平2009 物理学报 58 432]
[16] Zhang C, Ding W Y, Wang H L, Chai W P, Ju D Y 2008 J. Environ. Sci. 21 741
[17] Tang W Z 2003 The Theory and Technology of the Thin Film Production (Beijing: Melallurgical Industry Press)(in Chinese) [唐伟忠 2003 薄膜材料制备原理、技术及应用 (北京: 冶金工业出版社)]
[18] Sugai H 2002 Plasma Electronic Engineering (Beijing: Science
[19] Wang J Y 1993 The Theory of Film Growth (Wuhan: Huazhong University of Science and Technology Press) (in Chinese)[王敬义 1993 薄膜生长理论 (武汉:华中理工大学出版社)]
[20] Moulder J F, Stickle W F, Sobol P E, Bomben K D 1995 Handbook of X-ray Photoelectron Spectroscopy (Minnesota: Physical Electronics Inc. )
[21] Ding W Y 2007 Ph. D. Dissertation (Dalian: Dalian University of Technology) (in Chinese) [丁万昱 2007 博士学位论文 (大连:大连理工大学)]
[22] Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2009 Phys. Plasmas 16 053502
[23] Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2010 Thin Solid Films 518 2077
[24] PCPDFWIN card number: 00-021-1272 (Version 2.1, Copyright 2000)
[25] PCPDFWIN card number: 00-021-1276 (Version 2.1, Copyright 2000)
[26] Meng L J, Andritschky M, Santos dos M P 1993 Thin Solid Films 223 242
[27] Hagfeldtt A, Gratzel M 1995 Chem. Rev. 95 49
[28] Tauc J 1966 Physica Status Solidi B 15 627
[29] Xu L, Tang C Q, Dai L, Tang D H, Ma X G 2007 Acta Phys. Sin. 56 1048 (in Chinese)[徐 凌、唐超群、戴 磊、唐代海、马新国2007 物理学报 56 1048]
[30] PengL P, Xu L, Yin J W 2007 Acta Phys. Sin. 56 1585 (in Chinese)[彭丽萍、徐 凌、尹建武2007 物理学报 56 1585]
-
[1] Fujishima A, Honda K 1972 Nature 37 238
[2] Wasielewski R, Domaradzki J, Wojcieszak D, Kaczmarek D, Borkowska A, Prociow E L, Ciszewski A 2008 Appl. Surf. Sci. 254 4396
[3] Press) p73 (in Chinese)[菅井秀郎 2002 等离子体电子工程学 (北京:科学出版社)]
[4] Solid Films 516 1434
[5] Borrás A, Yanguas-Gil A, Barranco A, Cotrino A, González-Elipe A R 2007 Phys. Rev. B 76 235303
[6] Tavares C J, Marques S M, Lanceros-Méndez S, Sencadas V, Teixeira V, Carneiro J O, Martins A J, Fernandes A J 2008 Thin
[7] Hu L H, Dai J, Liu W Q, Wang K J, Dai S Y 2009 Acta Phys. Sin. 58 1115 (in Chinese)[胡林华、戴 俊、刘伟庆、王孔嘉、戴松元2009 物理学报 58 1115]
[8] Shah I, Li W, Huang CP, Jung O, Ni C 2002 Proc. Natl. Acad. Sci. U. S. A. 99 6482
[9] Li W, Frenkel A I, Woicik J C, Ni C, Shah S I 2005 Phys. Rev. B 72 155315
[10] Asahi R, Morikawa T, Ohwaki T, Aoki K, Taga Y 2001 Science 293 269
[11] Tavares C J, Marques S M, Viseu T, Teixeira V, Carneiro J O, Alves E, Barradas N P, Munnik F, Girardeau T, Rivière J P 2009 J. Appl. Phys. 106 113535
[12] Sui R H, Young J L, Berlinguette C P 2010 J. Mater. Chem. 20 498
[13] Yasunori T 2009 Thin Solid Films 517 3167
[14] Tomás S A, Luna-Resendis A, Cortés-Cuautli L C, Jacinto D 2009 Thin Solid Films 518 1337
[15] Ding W Y, Wang H L, Miao Z, Zhang J J, Chai W P 2009 Acta Phys. Sin. 58 432 (in Chinese)[丁万昱、王华林、苗 壮、张俊计、柴卫平2009 物理学报 58 432]
[16] Zhang C, Ding W Y, Wang H L, Chai W P, Ju D Y 2008 J. Environ. Sci. 21 741
[17] Tang W Z 2003 The Theory and Technology of the Thin Film Production (Beijing: Melallurgical Industry Press)(in Chinese) [唐伟忠 2003 薄膜材料制备原理、技术及应用 (北京: 冶金工业出版社)]
[18] Sugai H 2002 Plasma Electronic Engineering (Beijing: Science
[19] Wang J Y 1993 The Theory of Film Growth (Wuhan: Huazhong University of Science and Technology Press) (in Chinese)[王敬义 1993 薄膜生长理论 (武汉:华中理工大学出版社)]
[20] Moulder J F, Stickle W F, Sobol P E, Bomben K D 1995 Handbook of X-ray Photoelectron Spectroscopy (Minnesota: Physical Electronics Inc. )
[21] Ding W Y 2007 Ph. D. Dissertation (Dalian: Dalian University of Technology) (in Chinese) [丁万昱 2007 博士学位论文 (大连:大连理工大学)]
[22] Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2009 Phys. Plasmas 16 053502
[23] Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2010 Thin Solid Films 518 2077
[24] PCPDFWIN card number: 00-021-1272 (Version 2.1, Copyright 2000)
[25] PCPDFWIN card number: 00-021-1276 (Version 2.1, Copyright 2000)
[26] Meng L J, Andritschky M, Santos dos M P 1993 Thin Solid Films 223 242
[27] Hagfeldtt A, Gratzel M 1995 Chem. Rev. 95 49
[28] Tauc J 1966 Physica Status Solidi B 15 627
[29] Xu L, Tang C Q, Dai L, Tang D H, Ma X G 2007 Acta Phys. Sin. 56 1048 (in Chinese)[徐 凌、唐超群、戴 磊、唐代海、马新国2007 物理学报 56 1048]
[30] PengL P, Xu L, Yin J W 2007 Acta Phys. Sin. 56 1585 (in Chinese)[彭丽萍、徐 凌、尹建武2007 物理学报 56 1585]
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