Increase in light extraction efficiency of vertical light emitting diodes by a photo-electro-chemical etching method

Gong Zhi-Na; Yun Feng; Ding Wen; Zhang Ye; Guo Mao-Feng; Liu Shuo; Huang Ya-Ping; Liu Hao; Wang Shuai; Feng Lun-Gang; Wang Jiang-Teng

doi:10.7498/aps.64.018501

Abstract

The rate of photo-electro-chemical (PEC) etching on N-polar n-GaN using vertical light emitting diodes (V-LEDs) has been investigated in detail, by varying the etching parameters (etchant concentration, etching duration and light intensity). V-LED with optimal hexagonal pyramid structure (the side-wall angle is 31°) has been fabricated, and then the influence of the PEC etching on the electrical and optical properties of V-LED has been analyzed. After PEC etching, the sample has good ohmic contact with the electrode and has lower contact resistance than a reference sample. The electrical characteristics have a better improvement. And the light output power has improved obviously after PEC etching, which shows 86.1% enhancement at 20 mA. Effect of side-wall angle of the pyramids on light extraction efficiency (LEE) in V-LEDs is theoretically calculated by finite difference time domain (FDTD) method. Simulation results show that the LEE is significantly increased for the sidewall angle between 20° and 40°, and the maximum enhancement is realized at a side-wall angle of 23.6° (the total reflection angle at the GaN/air interface).

Keywords:

Authors and contacts

1.
Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Key Laboratory of Physical Electronics and Devices of Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China;
2.
Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China;
3.
Shaanxi Supernova Lighting Technology Co. Ltd, Xi'an 710077, China
Funds: Project supported by the National High Technology Research and Development Program of China (Grant No. 2014AA032608), and the Xi'an Jiaotong University State Key Laboratory for Mechanical Behavior of Material open project, China (Project No. 20121201).

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Cited By

[1]	Park J, Shin M, Lee C C 2004 Opt. Lett. 29 2656
[2]	Kim H, Choi K K, Kim K K, Cho J, Lee S N, Park Y, Kwak J S, Seong T Y 2008 Opt. Lett. 33 1273
[3]	Zheng C, Zhang S M, Wang H, Liu J P, Wang H B, Li Z C, Feng M X, Zhao D G, Liu Z S, Jiang D S, Yang H 2012 Chin Phys. Lett. 29 017301
[4]	Furhmann D, Netzel C, Rossow U, Hangleiter A 2006 Appl. Phys. Lett. 88 071105
[5]	Huh C, Lee K S, Kang E J, Park S J 2003 J. Appl. Phys. 93 9383
[6]	Huang H W, Kuo H C, Lai C F, Lee C E, Chiu C W, Lu T C, Wang S C, Lin C H, Leung K M 2007 IEEE Photon. Technol. Lett. 19 565
[7]	Zhang S Y, Xiu X Q, Hua X M, Xie Z L, Liu B, Chen P, Han P, Lu H, Zhang R, Zheng Y D 2014 Chin. Phys. B 23 058101
[8]	Jewell J, Simeonov D, Huang S-C, Hu Y-L, Nakamura S, Speck J, Weisbuch C 2012 Appl. Phys. Lett. 100 171105
[9]	Wu K, Wei T B, Lan D, Zheng H Y, Wang J X, Luo Y, Li J M 2014 Chin. Phys. B 23 028504
[10]	Shen C F, Chang S J, Chen W S, Ko T K, Kuo C T, Shei S C 2007 IEEE Photon. Technol. Lett. 19 780
[11]	Minsky M S, White M, Hu E L 1996 Appl. Phys. Lett. 68 1531
[12]	Seo J W, Oh C S, Yang J W, Yang G M, Lim K Y, Yoon C J, Lee H J 2001 Phys. Status Solidi A 188 403
[13]	Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P, Nakamura S 2004 Appl. Phys. Lett. 84 855
[14]	Palacios T, Calle F, Varela M, Ballesteros C, Monroy E, Naranjo F B, Sanchez-Garacia M A, Calleja E, Munoz E 2000 Semicond. Sci. Technol. 15 996
[15]	Yu T J (于彤军) 2011 CN 102252829 A
[16]	Laubsch A, Sabathil M, Baur J, Peter M, Hahn B 2010 IEEE Trans. Electron Devices 57 79
[17]	Wang L C, Ma J, Liu Z Q, Yi X Y, Yuan G D, Wang G H 2013 J. Appl. Phys. 114 133101
[18]	Ng H M, Weimann N G, Chowdhury A 2003 J. Appl. Phys. 94 650
[19]	Chung R B, Chen H T, Pan C C, Ha J S, DenBaars S P, Nakamura S 2012 Appl. Phys. Lett. 100 091104
[20]	Kuo M L, Kim Y S, Hsieh M L, Lin S Y 2011 Nano Lett. 11 476

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Vol. 64, Issue 1 - 2015-01-05

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