| [1] |
Zhu Wei-Jun, Chen Jin-Xin, Gao Yu-Han, Yang De-Ren, Ma Xiang-Yang. Electroluminescence from silicon-based light-emitting device with erbium-doped TiO2 films: Enhancement effect of ytterbium codoping. Acta Physica Sinica,
2019, 68(12): 124204.
doi: 10.7498/aps.68.20190300
|
| [2] |
Wang Jian, Xie Zi-Li, Zhang Rong, Zhang Yun, Liu Bin, Chen Peng, Han Ping. Study on the photoluminescence properties of InN films. Acta Physica Sinica,
2013, 62(11): 117802.
doi: 10.7498/aps.62.117802
|
| [3] |
Yao Zhi-Tao, Sun Xin-Rui, Xu Hai-Jun, Jiang Wei-Fen, Xiao Shun-Hua, Li Xin-Jian. The structure and photoluminescence properties of ZnO/silicon nanoporous pillar array. Acta Physica Sinica,
2007, 56(10): 6098-6103.
doi: 10.7498/aps.56.6098
|
| [4] |
Tang Bin, Deng Hong, Shui Zheng-Wei, Wei Min, Chen Jin-Ju, Hao Xin. Room-temperature optical properties of Al-doped ZnO nanowires array. Acta Physica Sinica,
2007, 56(9): 5176-5179.
doi: 10.7498/aps.56.5176
|
| [5] |
Liu Xiao-Bing, Shi Xiang-Hua, Liao Tai-Chang, Ren Peng, Liu Yue, Liu Yi, Xiong Zu-Hong, Ding Xun-Min, Hou Xiao-Yuan. The microstructure and characteristics of luminescent porous silicon film prepared by the physicochemical sonic-vacating method. Acta Physica Sinica,
2005, 54(1): 416-421.
doi: 10.7498/aps.54.416
|
| [6] |
Xu Da-Yin, Liu Yan-Ping, He Zhi-Wei, Fang Ze-Bo, Liu Xue-Qin, Wang Yin-Yue. The behavior of photoluminescence from SiC:Tb films deposited on porous silicon substrate. Acta Physica Sinica,
2004, 53(8): 2694-2698.
doi: 10.7498/aps.53.2694
|
| [7] |
Peng Ai-Hua, Xie Er-Qing, Jiang Ning, Zhang Zhi-Min, Li Peng, He De-Yan. The photoluminescence characterization of rare earths (Tb, Gd) embedded into por ous silicon. Acta Physica Sinica,
2003, 52(7): 1792-1796.
doi: 10.7498/aps.52.1792
|
| [8] |
Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia. RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica,
2003, 52(10): 2558-2562.
doi: 10.7498/aps.52.2558
|
| [9] |
LIANG ER-JUN, CHAO MING-JU. LASER-INDUCED LATTICE DEFORMATION OF POROUS SILICON REVEALED BY RAMAN AND PHOTOLUMINESCENCE SPECTROSCOPIES. Acta Physica Sinica,
2001, 50(11): 2241-2246.
doi: 10.7498/aps.50.2241
|
| [10] |
XIAO ZHI-FEI, XU FEI, ZHANG TONG-HE, CHENG GUO-AN, GU LAN-LAN. . Acta Physica Sinica,
2001, 50(1): 164-168.
doi: 10.7498/aps.50.164
|
| [11] |
LIU ZHAO-HONG, JIANG BING-XI, CHEN MOU-ZHI, LIU RUI-TANG. DYNAMICAL CHARACTERISTICS OF ELECTROLUMINES-CENCE IN ZINC SULFIDE THIN FILM DEVICES DOPED WITH ERBIUM. Acta Physica Sinica,
1999, 48(9): 1767-1772.
doi: 10.7498/aps.48.1767
|
| [12] |
DU YING-LEI, LEE KI-HWAN, WU BAI-MEI, JIN YONG-YOU. STUDY OF PHOTOLUMINESCENCE SPECTRUM IN p-TYPE α-POROUS SILICON CARBIDE. Acta Physica Sinica,
1998, 47(10): 1747-1753.
doi: 10.7498/aps.47.1747
|
| [13] |
LIU MING, HE YU-LIANG, JIANG XING-LIU, LI GUO-HUA, HAN HE-XIANG. PHOTOLUMINESCENCE STUDY ON HYDROGENATED NANO-CRYSTALLINE SILICON FILM. Acta Physica Sinica,
1998, 47(5): 864-870.
doi: 10.7498/aps.47.864
|
| [14] |
LEI HONG-BING, YANG QIN-QING, WANG QI-MING. CRYSTAL-FIELD SPLITTING OF Er3+ IN SILICON. Acta Physica Sinica,
1998, 47(7): 1201-1206.
doi: 10.7498/aps.47.1201
|
| [15] |
LIU XIAO-BING, XIONG ZU-HONG, YUAN SHUAI, CHEN YAN-DONG, HE JUN, LIAO LIANG-SHENG, DING XUN-MIN, HOU XIAO-YUAN. STUDIES ON TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN POROUS SILICON. Acta Physica Sinica,
1998, 47(8): 1391-1396.
doi: 10.7498/aps.47.1391
|
| [16] |
WAN JUN, SHENG CHI, LU FANG, GONG DA-WEI, FAN YONG-LIANG, LIN FENG, WANG XUN. PHOTOLUMINESCENCE OF Er IN SiOx. Acta Physica Sinica,
1998, 47(10): 1741-1746.
doi: 10.7498/aps.47.1741
|
| [17] |
LIU XIAO-BING, SUN JIE-LIN, YUAN SHUAI, LIAO LIANG-SHENG, HE JUN, MIAO XI-YUE, FAN HONG-LEI, XU LEI, LI MIN-QIAN, HOU XIAO-YUAN. STUDIES ON MICROSTRUCTURE AND PHOTOLUMINESCENCE PROPERTY OF POROUS SILICON. Acta Physica Sinica,
1997, 46(8): 1543-1551.
doi: 10.7498/aps.46.1543
|
| [18] |
ZHANG BAI-XIN, ZHANG LI-ZHU, SONG HAI-ZHI, YAO GUANG-QING, DUAN JIA-DI, TAO GUO-QIANG. PEAK ENERGY FOCUSING OF PHOTOLUMINESCENCE FROM POROUS SILICON DURING STORING IN AIR OR 200℃ THERMAL OXIDATION. Acta Physica Sinica,
1995, 44(11): 1825-1830.
doi: 10.7498/aps.44.1825
|
| [19] |
WU XIAO-WEI, BAO XI-MAO, ZHENG XIANG-QIN, YAN FENG. THE PHOTOLUMINESCENCE SPECTRA SHIFT OF POROUS SILICON BY SPONTANEOUS OXIDATION. Acta Physica Sinica,
1994, 43(7): 1203-1207.
doi: 10.7498/aps.43.1203
|
| [20] |
LIN JUN, ZHANG LI-ZHU, ZHANG BO-RUI, ZONG BO-QING, QIN GUO-GANG, XU ZHEN-HUA. PHOTOLUMINESCENCE OF POROUS SILICON PROCESSED IN H2O2 UNDER ILLUMINATION. Acta Physica Sinica,
1994, 43(4): 646-650.
doi: 10.7498/aps.43.646
|
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