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Tang Jia-Xin, Li Zhan-Hai, Deng Xiao-Qing, Zhang Zhen-Hua. Electrical contact characteristics and regulatory effects of GaN/VSe2 van der Waals heterojunction. Acta Physica Sinica,
2023, 72(16): 167101.
doi: 10.7498/aps.72.20230191
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He Tian-Li, Wei Hong-Yuan, Li Cheng-Ming, Li Geng-Wei. Comparative study of n-GaN transition group refractory metal Ohmic electrode. Acta Physica Sinica,
2019, 68(20): 206101.
doi: 10.7498/aps.68.20190717
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Zhu Yan-Xu, Cao Wei-Wei, Xu Chen, Deng Ye, Zou De-Shu. Effect of different ohmic contact pattern on GaN HEMT electrical properties. Acta Physica Sinica,
2014, 63(11): 117302.
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Huang Ya-Ping, Yun Feng, Ding Wen, Wang Yue, Wang Hong, Zhao Yu-Kun, Zhang Ye, Guo Mao-Feng, Hou Xun, Liu Shuo. The reflectivity and ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN. Acta Physica Sinica,
2014, 63(12): 127302.
doi: 10.7498/aps.63.127302
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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica,
2013, 62(11): 117103.
doi: 10.7498/aps.62.117103
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Li Xiao-Jing, Zhao De-Gang, He Xiao-Guang, Wu Liang-Liang, Li Liang, Yang Jing, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng. Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN. Acta Physica Sinica,
2013, 62(20): 206801.
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Wang Xiao-Yong, Chong Ming, Zhao De-Gang, Su Yan-Mei. Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact. Acta Physica Sinica,
2012, 61(21): 217302.
doi: 10.7498/aps.61.217302
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan. Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica,
2011, 60(12): 127901.
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica,
2010, 59(2): 1258-1262.
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Wang Guang-Xu, Jiang Feng-Yi, Feng Fei-Fei, Liu Jun-Lin, Qiu Chong. N-polar n-type ohmic contact of GaN-based LED on Si substrate. Acta Physica Sinica,
2010, 59(8): 5706-5709.
doi: 10.7498/aps.59.5706
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Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
doi: 10.7498/aps.57.4570
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Lü Ling, Gong Xin, Hao Yue. Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica,
2008, 57(2): 1128-1132.
doi: 10.7498/aps.57.1128
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Ding Zhi-Bo, Wang Qi, Wang Kun, Wang Huan, Chen Tian-Xiang, Zhang Guo-Yi, Yao Shu-De. Determination of chemical composition and average crystal lattice constants of InGaN/GaN multiple quantum wells. Acta Physica Sinica,
2007, 56(5): 2873-2877.
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Wang Huan, Yao Shu-De, Pan Yao-Bo, Zhang Guo-Yi. Strain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffraction. Acta Physica Sinica,
2007, 56(6): 3350-3354.
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Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De. Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica,
2006, 55(5): 2476-2481.
doi: 10.7498/aps.55.2476
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica,
2006, 55(3): 1407-1412.
doi: 10.7498/aps.55.1407
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Wang Kun, Yao Shu-De, Hou Li-Na, Ding Zhi-Bo, Yuan Hong-Tao, Du Xiao-Long, Xue Qi-Kun. Depth-dependent elastic strain in ZnO/Zn0.9Mg0.1O/ZnO heterostructure studied by Rutherford backscattering/channeling. Acta Physica Sinica,
2006, 55(6): 2892-2896.
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Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111). Acta Physica Sinica,
2006, 55(6): 2977-2981.
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Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia. RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica,
2003, 52(10): 2558-2562.
doi: 10.7498/aps.52.2558
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Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng. . Acta Physica Sinica,
2002, 51(3): 629-634.
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