Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage
Acta Physica Sinica
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Acta Phys. Sin.  2009, Vol. 58 Issue (7): 4941-4947    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage
Yuan Guang-Cai1, Xu Zheng1, Zhao Su-Ling1, Zhang Fu-Jun1, Sun Qin-Jun1, Xu Xu-Rong1, Xu Na2
(1)北京交通大学光电子技术研究所,北京 100044;北京交通大学发光与光信息技术教育部重点实验室,北京 100044; (2)北京交通大学理学院,北京 100044
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