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Fabrication and performance of indium oxide based transparent thin film transistors

Xu Tian-Ning Wu Hui-Zhen Zhang Ying-Ying Wang Xiong Zhu Xia-Ming Yuan Zi-Jian

Fabrication and performance of indium oxide based transparent thin film transistors

Xu Tian-Ning, Wu Hui-Zhen, Zhang Ying-Ying, Wang Xiong, Zhu Xia-Ming, Yuan Zi-Jian
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  • Abstract views:  3279
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Publishing process
  • Received Date:  24 July 2009
  • Accepted Date:  12 November 2009
  • Published Online:  15 July 2010

Fabrication and performance of indium oxide based transparent thin film transistors

  • 1. (1)State Key Laboratory for Modern Optical Instruments, Department of Physics, Zhejiang University, Hangzhou 310027, China; (2)State Key Laboratory for Modern Optical Instruments, Department of Physics, Zhejiang University, Hangzhou 310027, China; Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou 310024, China

Abstract: Indium oxide thin film was deposited on glass substrate by radio frequency magnetron sputtering at room temperature. The In2O3 film was polycrystalline with a preferred (111) orientation and a grain size of 33 nm was estimated. The bottom-gate staggered thin film transistors (TFTs) were fabricated by standard photolithography, with In2O3 as active channel layers. The In2O3 TFTs exhibit good gate bias controlling characteristic with a field effect mobility of 6.3 cm2/V·s, an on-off current ratio of 3×103, and a threshold voltage of -0.9 V. Device performance and room temperature fabrication technology make In2O3 TFTs promising for display panel applications.

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