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Laser crystallization of amorphous Si thin films is one of reliable method of preparing nanocrystalline silicon with high density and controllable size. In the present work, molecular dynamics simulation based on Tersoff potential was used to study the laser crystallization process of ultrathin amorphous silicon film (2.7 nm) on amorphous silicon nitride substrate. The influence of laser fluences on the crystallization and formation of nanocrystalline Si was investigated. It was found that there exists a laser fluence window in which nucleation and growth of nanocrystalline Si can be realized, which is in agreement with our previous experimental observations. The nucleation and growth processes in microscopic scale were simulated and the size of formed nanocrystalline Si was limited in both vertical and lateral directions by the film thickness and the formation of grain boundaries.
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Keywords:
- amorphous silicon /
- molecular dynamics /
- pulsed laser crystallization
[1] Kovalev D, Heckler H, Polisski G, Koch F 1999 Phys. Status Solidi. B 215 871
[2] Pavesi L, Bettotti P, Cazzanelli M, Cella S, Daldosso N, Dal Negro L, Danese B, Gaburro Z, Oton C J, Pancheri L, Prakash G V 2002 J. Phys. Condens. Mat. 14 8253
[3] Xia Z Y, Han P G, Wei D Y, Chen D Y, Xu J, Ma Z Y, Huang X F, Chen K J 2007 Acta Phys. Sin. 56 6691(in Chinese)[夏正月、韩培高、韦德远、陈德媛、徐 骏、马忠元、黄信凡、陈坤基 2007 物理学报 56 6691]
[4] Pavesi L 2008 Advances in Optical Technologies 2 416926
[5] Ding G Q, Zheng M J, Xu W L, Shen W Z 2006 Thin Solid Films 508 182
[6] Wang T, Wei D Y, Sun H C, Liu Y, Chen D Y, Chen G R, Xu J, Li W, Ma Z Y, Xu L, Chen K J 2009 Physica E 41 923
[7] Wang M X, Huang X F, Xu J, Li W, Liu Z G, Chen K J 1998 Appl. Phys. Lett. 72 722
[8] Liu Y S, Chen K, Qiao F, Huang X F, Han P G, Qian B, Ma Z Y, Li W, Xu J, Chen K J 2006 Acta Phys. Sin. 55 5403(in Chinese)[刘艳松、陈 铠、乔 峰、黄信凡、韩培高、钱 波、马忠元、李 伟、徐 骏、陈坤基 2006 物理学报 55 5403]
[9] Li X, Wang X W, Li X F, Qiao F, Mei J X, Li W, Xu J, Huang X F, Chen K J 2004 Acta Phys. Sin. 53 4293(in Chinese)[李 鑫、王晓伟、李雪飞、乔 峰、梅嘉欣、李 伟、徐 骏、黄信凡、陈坤基 2004 物理学报 53 4293]
[10] Lee B M, Seong B S, Munetoh S, Motooka T 2006 J. Korean Phys. Soc. 49 2353
[11] Liu W L, Zhang K W, Zhong J X 2009 Chin. Phys. B 18 2920
[12] Tersoff J 1989 Phys. Rev. B 39 5566
[13] Izumi S, Hara S, Kumagai T, Sakai S 2004 Comp. Mater. Sci. 31 258
[14] Mota F D, Justo J F, Fazzio A 1998 Phys. Rev. B 58 8323
[15] Cook S J, Clancy P 1993 Phys. Rev. B 47 7686
[16] van Gunsteren W F, Berendsen J C 1982 Mol. Phys. 45 637
[17] Uttormark M J, Thompson M O, Clancy P 1993 Phys. Rev. B 47 15717
[18] Hatano M, Moon S, Lee M, Suzuki K, Grigoropoulos C P 2000 J. Appl. Phys. 87 36
[19] Xu J, Li X, Cen Z H, Li W, Ma Z Y, Rui Y J, Huang X F, Chen K J 2005 Scripta Mater. 53 811
[20] Zhou J, Chen G R, Liu Y, Xu J, Wang T, Wan N, Ma Z Y, Li W, Song C, Chen K J 2009 Opt. Express 17 156
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[1] Kovalev D, Heckler H, Polisski G, Koch F 1999 Phys. Status Solidi. B 215 871
[2] Pavesi L, Bettotti P, Cazzanelli M, Cella S, Daldosso N, Dal Negro L, Danese B, Gaburro Z, Oton C J, Pancheri L, Prakash G V 2002 J. Phys. Condens. Mat. 14 8253
[3] Xia Z Y, Han P G, Wei D Y, Chen D Y, Xu J, Ma Z Y, Huang X F, Chen K J 2007 Acta Phys. Sin. 56 6691(in Chinese)[夏正月、韩培高、韦德远、陈德媛、徐 骏、马忠元、黄信凡、陈坤基 2007 物理学报 56 6691]
[4] Pavesi L 2008 Advances in Optical Technologies 2 416926
[5] Ding G Q, Zheng M J, Xu W L, Shen W Z 2006 Thin Solid Films 508 182
[6] Wang T, Wei D Y, Sun H C, Liu Y, Chen D Y, Chen G R, Xu J, Li W, Ma Z Y, Xu L, Chen K J 2009 Physica E 41 923
[7] Wang M X, Huang X F, Xu J, Li W, Liu Z G, Chen K J 1998 Appl. Phys. Lett. 72 722
[8] Liu Y S, Chen K, Qiao F, Huang X F, Han P G, Qian B, Ma Z Y, Li W, Xu J, Chen K J 2006 Acta Phys. Sin. 55 5403(in Chinese)[刘艳松、陈 铠、乔 峰、黄信凡、韩培高、钱 波、马忠元、李 伟、徐 骏、陈坤基 2006 物理学报 55 5403]
[9] Li X, Wang X W, Li X F, Qiao F, Mei J X, Li W, Xu J, Huang X F, Chen K J 2004 Acta Phys. Sin. 53 4293(in Chinese)[李 鑫、王晓伟、李雪飞、乔 峰、梅嘉欣、李 伟、徐 骏、黄信凡、陈坤基 2004 物理学报 53 4293]
[10] Lee B M, Seong B S, Munetoh S, Motooka T 2006 J. Korean Phys. Soc. 49 2353
[11] Liu W L, Zhang K W, Zhong J X 2009 Chin. Phys. B 18 2920
[12] Tersoff J 1989 Phys. Rev. B 39 5566
[13] Izumi S, Hara S, Kumagai T, Sakai S 2004 Comp. Mater. Sci. 31 258
[14] Mota F D, Justo J F, Fazzio A 1998 Phys. Rev. B 58 8323
[15] Cook S J, Clancy P 1993 Phys. Rev. B 47 7686
[16] van Gunsteren W F, Berendsen J C 1982 Mol. Phys. 45 637
[17] Uttormark M J, Thompson M O, Clancy P 1993 Phys. Rev. B 47 15717
[18] Hatano M, Moon S, Lee M, Suzuki K, Grigoropoulos C P 2000 J. Appl. Phys. 87 36
[19] Xu J, Li X, Cen Z H, Li W, Ma Z Y, Rui Y J, Huang X F, Chen K J 2005 Scripta Mater. 53 811
[20] Zhou J, Chen G R, Liu Y, Xu J, Wang T, Wan N, Ma Z Y, Li W, Song C, Chen K J 2009 Opt. Express 17 156
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