Analysis of organic photovoltaic devices with MoOx doped 4,4,4-tris(N-(3-methylphenyl)-N- phenylamin) triphenylamine as hole transport layer

Zhao Li; Liu Dong-Yang; Liu Dong-Mei; Chen Ping; Zhao Yi; Liu Shi-Yong

doi:10.7498/aps.61.088802

Abstract

MoOx doped 4,4,4-tris(N-(3-methylphenyl)-N-phenylamin) triphenylamine (m-MTDATA) is used as a hole transport layer to improve the efficiency of CuPc/C60 small molecular organic photovoltaics. A series of devices is fabricated in a high vacuum system. One of the devices with the structure of indum tin oxides (ITO)/m-MTDATA:MoOx(3:1)(30 nm)/CuPc(20 nm)/C60(40 nm)/Bphen (8 nm)/LiF(0.8 nm)/Al(100 nm) shows that the following parameters are achieved: the open circuit voltage Voc = 0.40 V, short-circuit current Jsc=6.59 mA/cm2, fill factor of 0.55, and power conversion efficiency p=1.46% under AM1.5 solar illumination. The efficiency of the device is improved by 38% compared with that of the device without hole transport layer ITO/CuPc(20 nm)/C60(40 nm)/Bphen(8 nm)/LiF(0.8 nm)/Al(100 nm). The improvement of the device performance may be attributed to the addition of m-MTDATA:MoOx (3:1) (30 nm) hole transport layer that reduces the contact resistance between the ITO electrode and the organic layer, thus reducing the overall device series resistance and improving the efficiency of the device.

Keywords:

Authors and contacts

1.
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB327701), the National High Technology Research and Development Program of China (Grant No. 2011AA03A110), the National Natural Science Foundation of China (Grant Nos. 60907013, 60906021, 60977024, 60876032, 60706018), and the Natural Science Foundation of Jilin Province, China (Grant No. 20090136).

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Cited By

[1]	Tang C W 1986 Appl. Phys. Lett. 48 183
[2]
[3]
[4]	Feng W, Gao Z K 2008 Acta Phys. Sin. 57 2567 (in Chinese) [封伟, 高中扩 2008 物理学报 57 2567]
[5]
[6]	Xing H W, Peng Y Q, Yang Q S, Ma C Z, Wang R S, Li X S 2008 Acta Phys. Sin. 57 7374 (in Chinese) [邢宏伟, 彭应全, 杨青森, 马朝柱, 汪润生, 李训栓 2008 物理学报 57 7374]
[7]
[8]	Yu H Z, Peng J B 2008 Chin. Phys. B 17 3143
[9]	Wang N N, Yu J S, Zang Y, Jiang Y D 2010 Chin. Phys. B 19 038602
[10]
[11]
[12]	Peumans P, Bulovic V, Forrest S R 2000 Appl. Phys. Lett. 76 2650
[13]
[14]	Peumans P, Forrest S R 2001 Appl. Phys. Lett. 79 126
[15]
[16]	Xue J, Uchida S, Rand B P, Forrest S R 2004 Appl. Phys. Lett. 84 3013
[17]
[18]	Chan M Y, Lai S L, Fung M K, Lee C S, Lee S T 2007 Appl. Phys. Lett. 90 023504
[19]	Liang Y, Xu Z, Xia J, Tsai S, Wu Y, Li G, Ray C, Yu L 2010 Adv. Mater. 22 1
[20]
[21]
[22]	Service R F 2011 Science 332 293
[23]	Forrest S R 2005 MRS Bull. 30 28
[24]
[25]
[26]	Zhou X, Pfeiffer M, Blochwitz J, Werner A, Nollau A, Fritz T, Leo K 2001 Appl. Phys. Lett. 78 410
[27]
[28]	Zhou X, Qin D S, Pfeiffer M, Blochwitz-Nimoth J, Werner A, Drechsel J, Maennig B, Leo K, Bold M, Erk K, Hartmann H 2002 Appl. Phys. Lett. 81 4070
[29]	Huang J, Pfeiffer M, Werner A, Blochwitz J, Liu S 2002 Appl. Phys. Lett. 80 139
[30]
[31]	Pfeiffer M, Forrest S R, Leo K, Thompson M E 2002 Adv. Mater. 14 1633
[32]
[33]
[34]	Pfeiffer M, Forrest S R, Zhou X, Leo K 2003 Org. Electron. 4 21
[35]
[36]	Maennig B, Drechsel J, Gebeyehu D, Simon P, Kozlowski F, Werner A, Li F, Leo K 2004 Appl. Phys. A 79 1
[37]	Xie G H, Meng Y L, Wu F M, Tao C, Zhang D D, Liu M J, Xue Q, Chen W, Zhao Y 2008 Appl. Phys. Lett. 92 093305
[38]
[39]	Wang J C, Ren X C, Shi S Q, Leung C W, Chan P K L 2011 Org. Electron. 12 880
[40]
[41]	Shirota Y 2000 J. Mater. Chem. 10 1
[42]
[43]
[44]	Terao Y, Sasabe H, Adachi C 2007 Appl. Phys. Lett. 90 103515
[45]	Peumans P, Yakimov A, Forrest S R 2003 J. Appl. Phys. 93 3693

Catalog

Vol. 61, Issue 8 - 2012-04-20

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