Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxy

Zhang Li-Li; Liu Zhan-Hui; Xiu Xiang-Qian; Zhang Rong; Xie Zi-Li

doi:10.7498/aps.62.208101

Abstract

In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized. The influences of the low-temperature (LT) nucleation layer growth time, V/Ⅲ precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, V/Ⅲ precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from three-dimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 μat the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D0X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Keywords:

Authors and contacts

1.
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2.
School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900, 2012CB619304), the National Natural Science Foundation of China (Grant Nos. 60990311, 60906025, 61176063), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 51002079, 21203098), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A103).

References

[1]	Nakamura S, Senoh M, Iwasa N, Nagahama S, Yamada T, Mukai T 1995 Jpn. J. Appl. Phys. 34 L1332
[2]	Zhang J P, Chitnis A, Adivarahan V, Wu S, Mandavilli V, Pachipulusu R, Shatalov M, Simin G, Yang J W, Khan M A 2002 Appl. Phys. Lett. 81 4910
[3]	Andre Y, Trassoudaine A, Tourret J, Cadoret R, Gil E, Castelluci D, Aoude O, Disseix P 2007 J. Cryst. Growth 306 86
[4]	Lee D Y, Han S H, Lee D J, Lee J W, Kim D J, Kim Y S, Kim S T, Leem J Y 2013 Appl. Phys. Lett. 102 011115
[5]	Mei J, Liu R, Ponce F A, Omiya H, Mukai T 2007 Appl. Phys. Lett. 90 171922
[6]	Maruska H P, Tietjen J J 1969 Appl. Phys. Lett. 15 327
[7]	Hageman P R, Kirilyuk V, Corbeek W H M, Weyher J L, Lucznik B, Bockowski M, Porowski S, Mller S 2003 J. Cryst. Growth 255 241
[8]	Ishibashi A, Kidoguchi I, Sugahara G, Ban Y 2000 J. Cryst. Growth 221 338
[9]	Tourret J, Gourmala O, André Y, Trassoudaine A, Gil E, Castelluci D, Cadoret R 2009 J. Cryst. Growth 311 1460
[10]	Nam O H, Bremser M D, Zheleva T S, Davis R F 1997 Appl. Phys. Lett. 71 2638
[11]	Zheleva T S, Nam O H, Bremser M D, Davis R F 1997 Appl. Phys. Lett. 71 2472
[12]	Akasaki I, Amano H, Koide Y, Hiramatsu K, Sawaki N 1989 J. Cryst. Growth 98 209
[13]	Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I 2003 J. Appl. Phys. 93 1311
[14]	Xue J S, Hao Y, Zhang J C, Ni J Y 2010 Chin. Phys. B 19 057203
[15]	Lin Z Y, Zhang J C, Zhou H, Li X G, Meng F N, Zhang L X, Ai S, Xu S R, Zhao Y, Hao Y 2012 Chin. Phys. B 21 126804
[16]	Ni Y Q, He Z Y, Zhong J, Yao Y, Yang F, Xiang P, Zhang B J, Liu Y 2013 Chin. Phys. B 22 088104
[17]	Peng D S, Chen Z G, Tan C C 2012 Chin. Phys. B 21 128101
[18]	Zhao W, Wang L, Wang J X, Luo Y 2011 Chin. Phys. B 20 076101
[19]	Qiu K, Zhong F, Li X H, Yin Z J, Ji C J, Han Q F, Chen J R, Cao X C, Wang Y Q 2007 Chin. Phys. 16 2082
[20]	Zhou A, Xiu X Q, Zhang R, Xie Z L, Hua X M, Liu B, Han P, Gu S L, Shi Y, Zheng Y D 2013 Chin. Phys. B 22 017801
[21]	Du Y H, Wu J J, Luo W K, John G, Han T, Tao Y B, Yang Z J, Yu T J, Zhang G Y 2011 Chin. Phys. B 20 098101
[22]	Wang L, Wang J X, Zhao W, Zou X, Luo Y 2010 Chin. Phys. B 19 076803
[23]	Chen Z, Yang W, Liu L, Wan C H, Li L, He Y F, Liu N Y, Wang L, Li D, Chen W H, Hu X D 2012 Chin. Phys. B 21 108505
[24]	Jiang R, Lu H, Chen D J, Ren F F, Yan D W, Zhang R, Zheng Y D 2013 Chin. Phys. B 22 047805
[25]	Chen X L, Kong F M, Li K, Gao H, Yue Q Y 2013 Acta Phys. Sin. 62 017805 (in Chinese) [陈新莲, 孔凡敏, 李康, 高晖, 岳庆炀 2013 物理学报 62 017805]
[26]	Le L C, Zhao D G, Wu L L, Deng Y, Jiang D S, Zhu Jian J, Liu Z S, Wang H, Zhang S M, Zhang B S, Yang H 2011 Chin. Phys. B 20 127306
[27]	Martin D, Napierala J, Ilegems M, Butté R, Grandjean N 2006 Appl. Phys. Lett. 88 241914
[28]	Hersee S D, Ramer J, Zheng K, Kranenberg C, Malloy K, Banas M, Goorsky M 1995 J. Electron. Mater. 24 1519
[29]	Wickenden A E, Wickenden D K, Kistenmacher T J 1994 J. Appl. Phys. 75 5367
[30]	Meng F Y, Han I, McFelea H, Lindow E, Bertram R, Werkhoven C, Arena C, Mahajan S 2011 J. Cryst. Growth 327 13
[31]	Heying B, Wu X H, Keller S, Li Y, Kapolnek D, Keller B P, Denbaars S P, Speck J S 1996 Appl. Phys. Lett. 68 643
[32]	Ruterana P, Albrecht M, Neugebauer J 2003 Nitride Semiconductors: Handbook on Materials and Devices (New York: Wiley-VCH) p49
[33]	Lucznik B, Pastuszka B, Grzegory I, Boćkowski M, Kamler G, Staszewska E L, Porowski S 2005 J. Cryst. Growth 281 38
[34]	Ito T, Sumiya M, Takano Y, Ohtsuka K, Fuke S 1999 Jpn. J. Appl. Phys. 38 649
[35]	Kim S Y, Lee H J, Park S H, Lee W, Jung M N, Fujii K, Goto T, Sekiguchi T, Chang J, Kil G, Yao T 2010 J. Cryst. Growth 312 2150
[36]	Freitas Jr J A 2010 J. Phys. D: Appl. Phys. 43 073001
[37]	Ueda T, Yuri M, Harris Jr J S 2011 Jpn. J. Appl. Phys. 50 085501
[38]	Solomon G S, Miller D J, Ramsteiner M, Trampert A, Brandt O, Ploog K H 2005 Appl. Phys. Lett. 87 181912
[39]	Paskova T, Valcheva E, Birch J, Tungasmita S, PPersson P O Å, Beccard R, Heuken M, Monemar M 2000 J. Appl. Phys. 88 5729
[40]	Wood D A, Parbrook P J, Lynch R J, Lada M, Cullis A G 2001 Phys. Stat. Sol. A 188 641
[41]	Darakchieva V, Monemar B, Usui A 2007 Appl. Phys. Lett. 91 031911
[42]	Jain S C, Willander M, Narayan J, Overstraeten R V 2000 J. Appl. Phys. 87 965
[43]	Kisielowski C, Kruger J, Ruvimov S, Suski T, Ager III J W, Jones E, Liliental-Weber Z, Rubin M, Weber E R, Bremser M D, Davis R F 1996 Phys. Rev. B 54 17745
[44]	Monemar B 2001 J. Phys.: Condens. Matter. 13 7011
[45]	Oh E, Lee S K, Park S S, Lee K Y, Song I J, Han J Y 2001 Appl. Phys. Lett. 78 273
[46]	Davydov V Y, Kitaev Y E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P, Evarestov R A 1998 Phys. Rev. B 58 12899

Cited By

[1]	Nakamura S, Senoh M, Iwasa N, Nagahama S, Yamada T, Mukai T 1995 Jpn. J. Appl. Phys. 34 L1332
[2]	Zhang J P, Chitnis A, Adivarahan V, Wu S, Mandavilli V, Pachipulusu R, Shatalov M, Simin G, Yang J W, Khan M A 2002 Appl. Phys. Lett. 81 4910
[3]	Andre Y, Trassoudaine A, Tourret J, Cadoret R, Gil E, Castelluci D, Aoude O, Disseix P 2007 J. Cryst. Growth 306 86
[4]	Lee D Y, Han S H, Lee D J, Lee J W, Kim D J, Kim Y S, Kim S T, Leem J Y 2013 Appl. Phys. Lett. 102 011115
[5]	Mei J, Liu R, Ponce F A, Omiya H, Mukai T 2007 Appl. Phys. Lett. 90 171922
[6]	Maruska H P, Tietjen J J 1969 Appl. Phys. Lett. 15 327
[7]	Hageman P R, Kirilyuk V, Corbeek W H M, Weyher J L, Lucznik B, Bockowski M, Porowski S, Mller S 2003 J. Cryst. Growth 255 241
[8]	Ishibashi A, Kidoguchi I, Sugahara G, Ban Y 2000 J. Cryst. Growth 221 338
[9]	Tourret J, Gourmala O, André Y, Trassoudaine A, Gil E, Castelluci D, Cadoret R 2009 J. Cryst. Growth 311 1460
[10]	Nam O H, Bremser M D, Zheleva T S, Davis R F 1997 Appl. Phys. Lett. 71 2638
[11]	Zheleva T S, Nam O H, Bremser M D, Davis R F 1997 Appl. Phys. Lett. 71 2472
[12]	Akasaki I, Amano H, Koide Y, Hiramatsu K, Sawaki N 1989 J. Cryst. Growth 98 209
[13]	Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I 2003 J. Appl. Phys. 93 1311
[14]	Xue J S, Hao Y, Zhang J C, Ni J Y 2010 Chin. Phys. B 19 057203
[15]	Lin Z Y, Zhang J C, Zhou H, Li X G, Meng F N, Zhang L X, Ai S, Xu S R, Zhao Y, Hao Y 2012 Chin. Phys. B 21 126804
[16]	Ni Y Q, He Z Y, Zhong J, Yao Y, Yang F, Xiang P, Zhang B J, Liu Y 2013 Chin. Phys. B 22 088104
[17]	Peng D S, Chen Z G, Tan C C 2012 Chin. Phys. B 21 128101
[18]	Zhao W, Wang L, Wang J X, Luo Y 2011 Chin. Phys. B 20 076101
[19]	Qiu K, Zhong F, Li X H, Yin Z J, Ji C J, Han Q F, Chen J R, Cao X C, Wang Y Q 2007 Chin. Phys. 16 2082
[20]	Zhou A, Xiu X Q, Zhang R, Xie Z L, Hua X M, Liu B, Han P, Gu S L, Shi Y, Zheng Y D 2013 Chin. Phys. B 22 017801
[21]	Du Y H, Wu J J, Luo W K, John G, Han T, Tao Y B, Yang Z J, Yu T J, Zhang G Y 2011 Chin. Phys. B 20 098101
[22]	Wang L, Wang J X, Zhao W, Zou X, Luo Y 2010 Chin. Phys. B 19 076803
[23]	Chen Z, Yang W, Liu L, Wan C H, Li L, He Y F, Liu N Y, Wang L, Li D, Chen W H, Hu X D 2012 Chin. Phys. B 21 108505
[24]	Jiang R, Lu H, Chen D J, Ren F F, Yan D W, Zhang R, Zheng Y D 2013 Chin. Phys. B 22 047805
[25]	Chen X L, Kong F M, Li K, Gao H, Yue Q Y 2013 Acta Phys. Sin. 62 017805 (in Chinese) [陈新莲, 孔凡敏, 李康, 高晖, 岳庆炀 2013 物理学报 62 017805]
[26]	Le L C, Zhao D G, Wu L L, Deng Y, Jiang D S, Zhu Jian J, Liu Z S, Wang H, Zhang S M, Zhang B S, Yang H 2011 Chin. Phys. B 20 127306
[27]	Martin D, Napierala J, Ilegems M, Butté R, Grandjean N 2006 Appl. Phys. Lett. 88 241914
[28]	Hersee S D, Ramer J, Zheng K, Kranenberg C, Malloy K, Banas M, Goorsky M 1995 J. Electron. Mater. 24 1519
[29]	Wickenden A E, Wickenden D K, Kistenmacher T J 1994 J. Appl. Phys. 75 5367
[30]	Meng F Y, Han I, McFelea H, Lindow E, Bertram R, Werkhoven C, Arena C, Mahajan S 2011 J. Cryst. Growth 327 13
[31]	Heying B, Wu X H, Keller S, Li Y, Kapolnek D, Keller B P, Denbaars S P, Speck J S 1996 Appl. Phys. Lett. 68 643
[32]	Ruterana P, Albrecht M, Neugebauer J 2003 Nitride Semiconductors: Handbook on Materials and Devices (New York: Wiley-VCH) p49
[33]	Lucznik B, Pastuszka B, Grzegory I, Boćkowski M, Kamler G, Staszewska E L, Porowski S 2005 J. Cryst. Growth 281 38
[34]	Ito T, Sumiya M, Takano Y, Ohtsuka K, Fuke S 1999 Jpn. J. Appl. Phys. 38 649
[35]	Kim S Y, Lee H J, Park S H, Lee W, Jung M N, Fujii K, Goto T, Sekiguchi T, Chang J, Kil G, Yao T 2010 J. Cryst. Growth 312 2150
[36]	Freitas Jr J A 2010 J. Phys. D: Appl. Phys. 43 073001
[37]	Ueda T, Yuri M, Harris Jr J S 2011 Jpn. J. Appl. Phys. 50 085501
[38]	Solomon G S, Miller D J, Ramsteiner M, Trampert A, Brandt O, Ploog K H 2005 Appl. Phys. Lett. 87 181912
[39]	Paskova T, Valcheva E, Birch J, Tungasmita S, PPersson P O Å, Beccard R, Heuken M, Monemar M 2000 J. Appl. Phys. 88 5729
[40]	Wood D A, Parbrook P J, Lynch R J, Lada M, Cullis A G 2001 Phys. Stat. Sol. A 188 641
[41]	Darakchieva V, Monemar B, Usui A 2007 Appl. Phys. Lett. 91 031911
[42]	Jain S C, Willander M, Narayan J, Overstraeten R V 2000 J. Appl. Phys. 87 965
[43]	Kisielowski C, Kruger J, Ruvimov S, Suski T, Ager III J W, Jones E, Liliental-Weber Z, Rubin M, Weber E R, Bremser M D, Davis R F 1996 Phys. Rev. B 54 17745
[44]	Monemar B 2001 J. Phys.: Condens. Matter. 13 7011
[45]	Oh E, Lee S K, Park S S, Lee K Y, Song I J, Han J Y 2001 Appl. Phys. Lett. 78 273
[46]	Davydov V Y, Kitaev Y E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P, Evarestov R A 1998 Phys. Rev. B 58 12899

[1]	Liu Qing-Bin, Yu Cui, Guo Jian-Chao, Ma Meng-Yu, He Ze-Zhao, Zhou Chuang-Jie, Gao Xue-Dong, Yu Hao, Feng Zhi-Hong. Influence of polycrystalline diamond on silicon-based GaN material. Acta Physica Sinica, 2023, 72(9): 098104. doi: 10.7498/aps.72.20221942
[2]	Lei Zhen-Shuai, Sun Xiao-Wei, Liu Zi-Jiang, Song Ting, Tian Jun-Hong. Phase diagram prediction and high pressure melting characteristics of GaN. Acta Physica Sinica, 2022, 71(19): 198102. doi: 10.7498/aps.71.20220510
[3]	Yuan Ying-Kuo, Guo Wei-Ling, Du Zai-Fa, Qian Feng-Song, Liu Ming, Wang Le, Xu Chen, Yan Qun, Sun Jie. Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode. Acta Physica Sinica, 2021, 70(19): 197801. doi: 10.7498/aps.70.20210122
[4]	Xie Fei, Zang Hang, Liu Fang, He Huan, Liao Wen-Long, Huang Yu. Simulated research on displacement damage of gallium nitride radiated by different neutron sources. Acta Physica Sinica, 2020, 69(19): 192401. doi: 10.7498/aps.69.20200064
[5]	Tang Wen-Hui, Liu Bang-Wu, Zhang Bo-Cheng, Li Min, Xia Yang. Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica, 2017, 66(9): 098101. doi: 10.7498/aps.66.098101
[6]	Wang Bo, Fang Yu-Long, Yin Jia-Yun, Liu Qing-Bin, Zhang Zhi-Rong, Guo Yan-Min, Li Jia, Lu Wei-Li, Feng Zhi-Hong. Effect of surface pretreatment on GaN van der Waals epitaxy growth on graphene. Acta Physica Sinica, 2017, 66(24): 248101. doi: 10.7498/aps.66.248101
[7]	Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi. Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate. Acta Physica Sinica, 2016, 65(8): 088501. doi: 10.7498/aps.65.088501
[8]	Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica, 2015, 64(18): 187801. doi: 10.7498/aps.64.187801
[9]	Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801. doi: 10.7498/aps.64.107801
[10]	Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica, 2015, 64(17): 177804. doi: 10.7498/aps.64.177804
[11]	Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica, 2011, 60(9): 098107. doi: 10.7498/aps.60.098107
[12]	Mao Qing-Hua, Jiang Feng-Yi, Cheng Hai-Ying, Zheng Chang-Da. p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates. Acta Physica Sinica, 2010, 59(11): 8078-8082. doi: 10.7498/aps.59.8078
[13]	Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica, 2010, 59(2): 1233-1236. doi: 10.7498/aps.59.1233
[14]	Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 472-476. doi: 10.7498/aps.57.472
[15]	Li Tong, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Xing Yan-Hui, Han Jun, Liu Ying, Gao Guo, Shen Guang-Di. Studies on electrical properties of delta-doping p-GaN films. Acta Physica Sinica, 2007, 56(2): 1036-1040. doi: 10.7498/aps.56.1036
[16]	Liu Jie, Hao Yue, Feng Qian, Wang Chong, Zhang Jin-Cheng, Guo Liang-Liang. Characterization of Ni/Au GaN Schottky contact base on I-V-T and C-V-T measurements. Acta Physica Sinica, 2007, 56(6): 3483-3487. doi: 10.7498/aps.56.3483
[17]	Guo Bao-Zeng, Gong Na, Shi Jian-Ying, Wang Zhi-Yu. Monte Carlo simulation of the hole transport properties for wurtzite GaN. Acta Physica Sinica, 2006, 55(5): 2470-2475. doi: 10.7498/aps.55.2470
[18]	Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429. doi: 10.7498/aps.55.1424
[19]	Li Yong-Hua, Xu Peng-Shou, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun. First-principle study on GaN(1010) surface structure. Acta Physica Sinica, 2005, 54(1): 317-322. doi: 10.7498/aps.54.317
[20]	Fang Kun, Gao Shan-Min, Qiu Hai-Lin, Cao Chuan-Bao, Zhu He-Sun. Synthesis of β-GaN nanocrystals with a cubic structure by gas-phase chemical reaction. Acta Physica Sinica, 2005, 54(5): 2267-2271. doi: 10.7498/aps.54.2267

Catalog

Vol. 62, Issue 20 - 2013-10-20

Metrics

Abstract views: 5218
PDF Downloads: 800
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板