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在惰性气氛Ar和还原性气氛H2中通过高温裂解含苯环的聚硅氧烷分别制备了硅氧碳化物Si-O-C复合负极材料,并且采用了元素分析element analysis、广角粉末X射线衍射XRD、傅里叶激光拉曼光谱Raman等手段表征了二者组成和结构的差别.实验发现,在H2气氛中裂解制备的Si-O-C复合负极含有较高的可逆、较低的不可逆容量,而且可逆容量随温度的增加而增长.其中H2气氛中1000 ℃情况下制备的Si-O-C复合负极的可逆容量622 mAh/g,首次库仑效率59%.Si-O-C复合负极的不可逆容量与氧的含量相关,可逆容量可能与碳含量及碳结构,以及SiOC中硅的结构相关.在H2气氛中制备的Si-O-C负极材料是一种潜在的锂离子电池的负极材料.
[1] Hou Z F, Liu H Y, Zhu Z Z, Huang M C, Yang Y 2003 Acta Phys. Sin. 52 952(in Chinese)[侯柱锋、刘慧英、朱梓忠、黄美纯、杨 勇 2003 物理学报 52 952]
[2] Hou X H, Hu S J, Li W S, Zhao L Z, Yu H W, Tan C L 2008 Acta Phys. Sin. 57 2375(in Chinese)[侯贤华、胡社军、李伟善、赵灵智、余洪文、谭春林 2008 物理学报 57 2375]
[3] [4] [5] Lee H Y, Lee S M 2004 Electrochem. Commun. 6 465
[6] Zhang X W, Patil P K, Wang C, Appleby A J, Little F 2004 J. Power Sources 125 206
[7] [8] Chan C K, Peng H, Liu G, McIlwrath K, Zhang X F, Huggins R A, Cui Y 2007 Nat.Nanotechnol. 3 31
[9] [10] Kasavajjula U, Wang C, Appleby A J 2007 J. Power Sources 163 1003
[11] [12] [13] Maranchi J P, Hepp A F, Kumta P N 2003 Electrochem. Solid-State Lett. 6 A198
[14] Lee K L, Jung J Y, Lee S W, Moon H S, Park J W 2004 J. Power Sources 129 270
[15] [16] [17] Ohara S, Suzuki J, Sekine K, Takamura T 2004 J. Power Sources 136 303
[18] [19] Uehara M, Suzuki J, Tamura K, Sekine K, Takamura T 2005 J. Power Sources 146 441
[20] Chen L, Wang K, Xie X, Xie J 2006 Electrochem. Solid-State Lett. 9 A512
[21] [22] Chen L B, Yu H C, Xu C M, Wang T H 2009 Acta Phys. Sin. 58 5029 (in Chinese)[陈立宝、虞红春、许春梅、王太宏 2009 物理学报 58 5029]
[23] [24] Dimov N, Kugino S, Yoshio M 2003 Electrochim. Acta 48 1579
[25] [26] [27] Wen Z S, Yang J, Wang B F, Wang K, Liu Y 2003 Electrochem. Commun. 5 165
[28] Wang G X, Ahn J H, Yao J, Bewlay S, Liu H K 2004 Electrochem. Commun. 6 689
[29] [30] [31] Wang G X, Yao J, Liu H K 2004 Electrochem. Solid-State Lett. 7 A250
[32] Datta M K, Kumta P N 2006 J. Power Sources 158 557
[33] [34] Xing W, Wilson A M, Zank G, Dahn J R 1997 Solid State Ionics 93 239
[35] [36] [37] Wilson A M, Xing W, Zank G, Yates B, Dahn J R 1997 Solid State Ionics 100 259
[38] [39] Wilson A M, Reimers J N, Fuller E W, Dahn J R 1994 Solid State Ionics 74 249
[40] Wilson A M, Zank G, Eguchi K, Xing W, Dahn J R 1997 J. Power Sources 68 195
[41] [42] [43] Ning L, Wu Y, Wang L, Fang S, Holze R 2005 J. Solid State Electrochem. 9 520
[44] Shen J, Ahn D, Raj R 2010 J. Power Sources 196 2875
[45] [46] Ahn D, Raj R 2011 J. Power Sources 196 2179
[47] [48] [49] Ahn D, Raj R 2010 J. Power Sources 195 3900
[50] Fukui H, Ohsuka H, Hino T, Kanamura K 2009 Chem. Lett. 38 86
[51] [52] Konno H, Morishita T, Wan C, Kasashima T, Habazaki H, Inagaki M 2007 Carbon 45 477
[53] [54] [55] Fukui H, Ohsuka H, Hino T, Kanamura K 2010 ACS Appl. Mater. Interfaces 2 998
[56] Ferrari A C, Robertson J 2000 Phys. Rev. B 61 14095
[57] [58] Soraru G D, DAndrea G, Campostrini R, Babonneau F, Mariotto G 1995 J. Am. Ceram. Soc. 78 379
[59] [60] [61] Wilson A M 1994 Ph. D. Dissertation (Ottawa:Simon Fraser University)
[62] Wang S, Matsumura Y, Maeda T 1995 Synth. Met. 71 1759
[63] [64] Buiel E, George A E, Dahn J R 1998 J. Electrochem. Soc. 145 2252
[65] -
[1] Hou Z F, Liu H Y, Zhu Z Z, Huang M C, Yang Y 2003 Acta Phys. Sin. 52 952(in Chinese)[侯柱锋、刘慧英、朱梓忠、黄美纯、杨 勇 2003 物理学报 52 952]
[2] Hou X H, Hu S J, Li W S, Zhao L Z, Yu H W, Tan C L 2008 Acta Phys. Sin. 57 2375(in Chinese)[侯贤华、胡社军、李伟善、赵灵智、余洪文、谭春林 2008 物理学报 57 2375]
[3] [4] [5] Lee H Y, Lee S M 2004 Electrochem. Commun. 6 465
[6] Zhang X W, Patil P K, Wang C, Appleby A J, Little F 2004 J. Power Sources 125 206
[7] [8] Chan C K, Peng H, Liu G, McIlwrath K, Zhang X F, Huggins R A, Cui Y 2007 Nat.Nanotechnol. 3 31
[9] [10] Kasavajjula U, Wang C, Appleby A J 2007 J. Power Sources 163 1003
[11] [12] [13] Maranchi J P, Hepp A F, Kumta P N 2003 Electrochem. Solid-State Lett. 6 A198
[14] Lee K L, Jung J Y, Lee S W, Moon H S, Park J W 2004 J. Power Sources 129 270
[15] [16] [17] Ohara S, Suzuki J, Sekine K, Takamura T 2004 J. Power Sources 136 303
[18] [19] Uehara M, Suzuki J, Tamura K, Sekine K, Takamura T 2005 J. Power Sources 146 441
[20] Chen L, Wang K, Xie X, Xie J 2006 Electrochem. Solid-State Lett. 9 A512
[21] [22] Chen L B, Yu H C, Xu C M, Wang T H 2009 Acta Phys. Sin. 58 5029 (in Chinese)[陈立宝、虞红春、许春梅、王太宏 2009 物理学报 58 5029]
[23] [24] Dimov N, Kugino S, Yoshio M 2003 Electrochim. Acta 48 1579
[25] [26] [27] Wen Z S, Yang J, Wang B F, Wang K, Liu Y 2003 Electrochem. Commun. 5 165
[28] Wang G X, Ahn J H, Yao J, Bewlay S, Liu H K 2004 Electrochem. Commun. 6 689
[29] [30] [31] Wang G X, Yao J, Liu H K 2004 Electrochem. Solid-State Lett. 7 A250
[32] Datta M K, Kumta P N 2006 J. Power Sources 158 557
[33] [34] Xing W, Wilson A M, Zank G, Dahn J R 1997 Solid State Ionics 93 239
[35] [36] [37] Wilson A M, Xing W, Zank G, Yates B, Dahn J R 1997 Solid State Ionics 100 259
[38] [39] Wilson A M, Reimers J N, Fuller E W, Dahn J R 1994 Solid State Ionics 74 249
[40] Wilson A M, Zank G, Eguchi K, Xing W, Dahn J R 1997 J. Power Sources 68 195
[41] [42] [43] Ning L, Wu Y, Wang L, Fang S, Holze R 2005 J. Solid State Electrochem. 9 520
[44] Shen J, Ahn D, Raj R 2010 J. Power Sources 196 2875
[45] [46] Ahn D, Raj R 2011 J. Power Sources 196 2179
[47] [48] [49] Ahn D, Raj R 2010 J. Power Sources 195 3900
[50] Fukui H, Ohsuka H, Hino T, Kanamura K 2009 Chem. Lett. 38 86
[51] [52] Konno H, Morishita T, Wan C, Kasashima T, Habazaki H, Inagaki M 2007 Carbon 45 477
[53] [54] [55] Fukui H, Ohsuka H, Hino T, Kanamura K 2010 ACS Appl. Mater. Interfaces 2 998
[56] Ferrari A C, Robertson J 2000 Phys. Rev. B 61 14095
[57] [58] Soraru G D, DAndrea G, Campostrini R, Babonneau F, Mariotto G 1995 J. Am. Ceram. Soc. 78 379
[59] [60] [61] Wilson A M 1994 Ph. D. Dissertation (Ottawa:Simon Fraser University)
[62] Wang S, Matsumura Y, Maeda T 1995 Synth. Met. 71 1759
[63] [64] Buiel E, George A E, Dahn J R 1998 J. Electrochem. Soc. 145 2252
[65]
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