45 nm宽带可连续调谐半导体薄片激光器

毛琳; 张晓健; 李春玲; 朱仁江; 汪丽杰; 宋晏蓉; 王涛; 张鹏

doi:10.7498/aps.70.20210888

摘要

本文报道了一种宽带可连续调谐的半导体薄片激光器. 增益芯片的有源区由满足谐振周期增益结构的InGaAs多量子阱构成, 其荧光峰值波长位于965 nm附近. 利用增益芯片量子阱的宽带特性, 结合由高反射率外腔镜所构成的直线谐振腔, 可保障激光器较低的损耗和较宽的调谐范围. 在腔内插入不同厚度的双折射滤波片, 可获得连续可调谐的激光波长输出. 当双折射滤波片厚度为2 mm时, 激光器的波长调谐范围为45 nm, 最大输出功率为122 mW, X和Y方向的光束质量M²因子分别为1.00和1.02. 文章还对增益芯片面发射谱的温度特性和双折射滤波片对激光线宽的压窄作用进行了讨论.

关键词:

Abstract

A broadband continuously tunable semiconductor disk laser is reported in this paper. The active region of gain chip is composed of InGaAs multiple quantum wells with resonant periodic gain structure, and its fluorescence peak wavelength is around 965 nm. Using the wideband characteristics of the quantum wells in gain chip, along with the simple linear cavity that is formed by a high reflectivity external mirror, the laser has a low cavity loss and a wide tuning range. The continuously tunable laser wavelength can be obtained by inserting birefringent filters with different thickness into the cavity. When the thickness of the birefringent filter is 2 mm, the wavelength tuning range of the laser is 45 nm, the maximum output power is 122 mW, and the beam quality M² factors in the X- and the Y-directions are 1.00 and 1.02, respectively. The temperature characteristics of the surface-emitting spectra of gain chip and the narrowing effect of birefringent filter on laser linewidth h are also discussed.

Keywords:

作者及机构信息

1.
重庆师范大学物理与电子工程学院, 重庆　401331

2.
中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室, 长春　130033

3.
北京工业大学应用数理学院, 北京　100124

通信作者: 王涛, wangt@cqnu.edu.cn ; 张鹏, zhangpeng2010@cqnu.edu.cn

基金项目: 国家自然科学基金(批准号: 61904024)、重庆市教委科学技术研究重大项目(批准号: KJZD-M201900502)、重庆市基础研究与前沿探索项目(批准号: cstc2018jcyjAX0319)、教育部 "蓝火计划"(惠州)产学研联合创新基金(批准号: CXZJHZ201728)、发光学与应用国家重点实验室开放项目(批准号: SKLA-2019-04)、重庆市教委科学技术研究项目(批准号: KJQN201800528)资助的课题

Authors and contacts

1.
College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China

2.
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

3.
College of Applied Sciences, Beijing University of Technology, Beijing 100124, China

Corresponding author: Wang Tao, wangt@cqnu.edu.cn ; Zhang Peng, zhangpeng2010@cqnu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61904024), the Science and Technology Research Program of Chongqing Municipal Education Commission, China (Grant No. KJZD-M201900502), the Chongqing Research Program of Basic Research and Frontier Technology, China (Grant No. cstc2018jcyjAX0319), the “Blue Fire Plan” (Huizhou) Foundation of Industry University Research Joint Innovation of Ministry of Education, China (Grant No. CXZJHZ201728), the State Key Laboratory of Luminescence and Applications, China (Grant No. SKLA-2019-04), and the Scientific and Technological Research Program of Chongqing Municipal Education Commission, China (Grant No. KJQN201800528).

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参考文献

[1]	Lu B, Wei F, Zhang Z, Xu D, Pan Z Q, Chen D J, Cai H W 2015 Chin. Opt. Lett. 13 091402 Google Scholar
[2]	Farrell T, McDonald D 2004 Proc. SPIE 5594 66 Google Scholar
[3]	Rothe K W, Brinkmann U, Walther H 1974 Appl. Phys. 10 678 Google Scholar
[4]	Soldatov A N, Reimer I V, Evtushenko V A, Melnikov K Yu, Malikov A V 2010 B. Lebedev Phys. Inst. 37 4 Google Scholar
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[7]	Fan T Y, Byer R L 1988 IEEE J. Quantum Electron. 24 895 Google Scholar
[8]	Byer R L 1988 Science 239 742 Google Scholar
[9]	Huber G, Kränkel C, Petermann K 2010 JOSA B 27 B93 Google Scholar
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[24]	Mangold M, Wittwer V J, Sieber O D, Martin H, Igor L K, Daniil A L, Matthias G, Thomas S, Ursula K 2012 Opt. Express 20 4136 Google Scholar
[25]	Fan L, Hader J, Schillgalies M, Fallahi M, Zakharian A R, Moloney J V, Bedford R, Murrary J T, Koch S W, Stolz W 2005 IEEE Photonic Tech. L. 17 1764 Google Scholar
[26]	Sandusky J V, Brueck S R J 1996 IEEE Photonic Tech. L. 8 313 Google Scholar
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施引文献

图 1 (a)增益芯片实物及(b)外延片结构示意图

Fig. 1. (a) Photograph and (b) epitaxial structure of the gain chip

下载: 全尺寸图片幻灯片

图 2 不同热沉温度下增益芯片的面发射PL谱

Fig. 2. Surface-emitting PL spectra of the gain chip under different heatsink temperatures.

下载: 全尺寸图片幻灯片

图 3 不同泵浦功率下增益芯片的面发射PL谱

Fig. 3. Surface-emitting PL spectra of the gain chip with different pump power.

下载: 全尺寸图片幻灯片

图 4 (a)宽带可调谐半导体薄片激光器结构示意图及(b)实物图

Fig. 4. (a) Schematics and (b)photograph of the broadband tunable semiconductor disk laser.

下载: 全尺寸图片幻灯片

图 5 自由运转下半导体薄片激光器的输出功率

Fig. 5. Output powers of the free-running semiconductor disk laser.

下载: 全尺寸图片幻灯片

图 6 最大输出功率为0.58 W时, 激光束的M²因子

Fig. 6. M² factor of the laser beam when the maximum output power is 0.58 W.

下载: 全尺寸图片幻灯片

图 7 使用2 mm厚度BRF的SDL的波长调谐特性. 图中同时画出了对应波长的输出功率和不同m值下BRF的调谐曲线

Fig. 7. Tuning characteristics of the SDL with 2 mm thickness BRF. The corresponding output powers at various wavelengths and the tuning curves of the BRF with different m values are also plotted.

下载: 全尺寸图片幻灯片

图 8 用4 mm厚度BRF作调谐元件的SDL的调谐特性

Fig. 8. Tuning characteristics of the SDL with 4 mm thickness BRF.

下载: 全尺寸图片幻灯片

图 9 用6 mm厚度BRF作调谐元件的SDL的调谐特性

Fig. 9. Tuning characteristics of the SDL with 6 mm thickness BRF.

下载: 全尺寸图片幻灯片

图 10 自由运转及插入不同厚度BRF时SDL的光谱线宽

Fig. 10. Laser spectra of the SDL under free-running and with different thickness BRF.

下载: 全尺寸图片幻灯片

[1]	Lu B, Wei F, Zhang Z, Xu D, Pan Z Q, Chen D J, Cai H W 2015 Chin. Opt. Lett. 13 091402 Google Scholar
[2]	Farrell T, McDonald D 2004 Proc. SPIE 5594 66 Google Scholar
[3]	Rothe K W, Brinkmann U, Walther H 1974 Appl. Phys. 10 678 Google Scholar
[4]	Soldatov A N, Reimer I V, Evtushenko V A, Melnikov K Yu, Malikov A V 2010 B. Lebedev Phys. Inst. 37 4 Google Scholar
[5]	Bhatia P S, Keto J W 1996 Appl. Opt. 35 4152 Google Scholar
[6]	Kuehne A J C, Gather M C 2016 Chem. Rev. 116 12823 Google Scholar
[7]	Fan T Y, Byer R L 1988 IEEE J. Quantum Electron. 24 895 Google Scholar
[8]	Byer R L 1988 Science 239 742 Google Scholar
[9]	Huber G, Kränkel C, Petermann K 2010 JOSA B 27 B93 Google Scholar
[10]	Coldren L A, Fish G A, Akulova Y, Barton J S, Colder C W 2004 J. Lightwave Technol. 22 193 Google Scholar
[11]	郝秀晴, 陈根祥 2010 光通信技术 34 4 Google Scholar Hao X Q, Chen G X 2010 Opt. Commun. Technol. 34 4 Google Scholar
[12]	Guina M, Rantamäki A, Härkönen A 2017 J. Phys. Appl. Phys. 50 383001 Google Scholar
[13]	Rudin B, Rutz A, Hoffmann M, Maas D J H C, Bellancourt A R, Gini E, Südmeyer T, Keller U 2008 Opt. Lett. 33 2719 Google Scholar
[14]	Heinen B, Wang T L, Sparenberg M, Weber A, Kunert B, Hader J, Koch S W, Moloney J V, Koch M, Stolz W 2012 Electron. Lett. 48 516 Google Scholar
[15]	Hou G Y, Shu S L, Feng J, Popp A, Schmidt B, Lu H Y, Wang L J, Tian S C, Tong C Z, Wang L J 2019 IEEE Photonics J. 11 1 Google Scholar
[16]	Fedorova K A, Guoyu H, Wichmann M, Kriso C, Zhang F, Stolz W, Schellrt M, Koch M, Rahimi-lman A 2020 Phys. Status Solidi-R 14 2000204 Google Scholar
[17]	Li F, Mahmoud F, James T, Robert B, Yunshi K, Aramais Z, Jorg H, Jerome V, Wolfgang S, Stephan W 2006 Appl. Phys. Lett. 88 21105 Google Scholar
[18]	Li F, Fallahi M, Zakharian A R, Hader J, Koch SW 2007 IEEE Photonic. Tech. L. 19 544 Google Scholar
[19]	Borgentun C, Bengtsson J, Larsson A, Demaria F, Hein A, Unger P 2010 IEEE Photonic. Tech. L. 22 978 Google Scholar
[20]	Butkus M, Rautiainen J, Okhotnikov O G, Hamilton C J, Malcolm G P A, Mikhrin S S, Krestnikov I L, Livshits D A, Rafailov E U 2011 IEEE J. Sel. Top. Quant. 17 1763 Google Scholar
[21]	Yang Z, Albrecht R A, Cederberg J G, Sheik-Bahae M 2016 Appl. Phys. Lett. 109 1063 Google Scholar
[22]	Artur B, Anna W J, Iwona S, Michal W, Marta W, Jan M 2017 IEEE PhotoN. Technol. Lett. 29 2215 Google Scholar
[23]	Zhang P, Song Y R, Zhang X P, Dai T L, Liang Y P, Fan S Q 2011 Opt. Rev. 18 317 Google Scholar
[24]	Mangold M, Wittwer V J, Sieber O D, Martin H, Igor L K, Daniil A L, Matthias G, Thomas S, Ursula K 2012 Opt. Express 20 4136 Google Scholar
[25]	Fan L, Hader J, Schillgalies M, Fallahi M, Zakharian A R, Moloney J V, Bedford R, Murrary J T, Koch S W, Stolz W 2005 IEEE Photonic Tech. L. 17 1764 Google Scholar
[26]	Sandusky J V, Brueck S R J 1996 IEEE Photonic Tech. L. 8 313 Google Scholar
[27]	王亚龙, 王庆, 李文静, 王雅兰 2018 光学技术 44 88 Wang Y L, Wang Q, Li W J, Wang Y L 2018 Opt. Tech. 44 88

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45 nm宽带可连续调谐半导体薄片激光器